AN3025
Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
Text: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace
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AN3025
AN3025
transistor working principle
tinning
METCAL MX-500 circuit
free transistor
SN62
SN63
GC Electronics 108109
metcal
transistor free
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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NPN EBC SOT-23
Abstract: SOT-23 EBC NPN transistor ECB TO-92
Text: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003
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PJP110A
O-220
PJP168A
PJ13003
PJ13005
PJ13007
NPN EBC SOT-23
SOT-23 EBC
NPN transistor ECB TO-92
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Halbleiterbauelemente DDR
Abstract: elektronik DDR Leistungsdiode Halbleiter-Bauelemente DDR Hallgenerator CSSR silizium diode
Text: Tunneldiode HF-Transistor Diode Kapazitätsdiode NF-Transistor NF-Leistungstransistor Ptot >1W Bauelement 2.Element Hall-Feldsonde CSSR: Silizium Hall-Generator CSSR: Galliumarsenidphosphid HF-Leistungstransistor Hall-Generator DDR: MIS-Transistor strahlungsempfindliches
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transistor case To 106
Abstract: BUT11A Transistor morocco 1300
Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION
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BUT11A
BUT11A
O-220
O-220
transistor case To 106
Transistor morocco 1300
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Untitled
Abstract: No abstract text available
Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION
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BUT11A
BUT11A
O-220
O-220
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Untitled
Abstract: No abstract text available
Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION
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BUT11A
BUT11A
O-220
O-220
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4 npn transistor ic 14pin
Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
Text: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation
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PA104
PA104B:
PA104G:
14-pin
PA104
4 npn transistor ic 14pin
lowest noise audio NPN transistor
C10535E
MICRO-X TRANSISTOR MARK Q6
8 npn transistor ic 14pin
MIL GRADE TRANSISTOR ARRAY
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Transistor morocco 1300
Abstract: but11a BUT11A APPLICATION ST BUT11A
Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION
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BUT11A
BUT11A
O-220
O-220
Transistor morocco 1300
BUT11A APPLICATION
ST BUT11A
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high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
Abstract: S11A1 Glossary of Microwave Transistor Terminology
Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .
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5966-3085E
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
S11A1
Glossary of Microwave Transistor Terminology
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Untitled
Abstract: No abstract text available
Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS s t ■
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BUT11A
BUT11A
O-220
O-220
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high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
Abstract: Glossary of Microwave Transistor Terminology
Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .
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5966-3085E
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
Glossary of Microwave Transistor Terminology
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monochrome diagram
Abstract: monochrome crt schematic BU407
Text: BU407 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs ■ DESCRIPTION The BU407 is a silicon Epitaxial Planar NPN transistor in Jedec TO-220 plastic package.
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BU407
BU407
O-220
O-220
monochrome diagram
monochrome crt schematic
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BU407
Abstract: No abstract text available
Text: BU407 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs ■ DESCRIPTION The BU407 is a silicon Epitaxial Planar NPN transistor in Jedec TO-220 plastic package.
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BU407
BU407
O-220
O-220
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2N5195
Abstract: 2N5192
Text: 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.
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2N5195
2N5195
OT-32
2N5192.
OT-32
2N5192
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Untitled
Abstract: No abstract text available
Text: STD123ASF Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information
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STD123ASF
100mA
STD123ASF
OT-23F
KST-2029-001
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2N412
Abstract: No abstract text available
Text: 2N4126 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Transistor for switching and amplifier applications. • Especially suitable for AF-driver and low-power output stages. • As complementary type, the NPN transistor
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2N4126
2N4124
D-74025
18-Aug-04
2N412
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2N4126
Abstract: 2N4124 2N4126-BULK 2N4126-TAP
Text: 2N4126 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Transistor for switching and amplifier applications. • Especially suitable for AF-driver and low-power output stages. • As complementary type, the NPN transistor
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2N4126
2N4124
2N4126-BULK
2N4126-TAP
D-74025
01-Sep-04
2N4126
2N4126-TAP
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369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
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BUD42D
BUD42D
BUD42D/D
369D
BUD42DT4
MPF930
MTP8P10
MUR105
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Untitled
Abstract: No abstract text available
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
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BUD42D
D42DG
BUD42D/D
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SL 100 NPN Transistor base emitter collector
Abstract: mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz
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BLT92/SL
SL 100 NPN Transistor base emitter collector
mda301
BLT92
MDA300
SL 100 NPN Transistor
SL 100 power transistor
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Untitled
Abstract: No abstract text available
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
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BUD42D
BUD42D
BUD42D/D
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MCT8 opto
Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR
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MCT210
MCT26
MCT66
C1255
10TT1.
MCT8 opto
c1252
MCL601
MCT8 opto switch
C1246
4N25
4N26
4N27
4N28
4N35
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BFR96
Abstract: BFR96 TRANSISTOR transistor bfr96
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers
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BFR96
BFR96
D10b3
BFR96 TRANSISTOR
transistor bfr96
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