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    TRANSISTOR SMD N 03A Search Results

    TRANSISTOR SMD N 03A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD N 03A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7002 NXP MARKING

    Abstract: ON5520 fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code 2N7002 smd TRANSISTOR code marking 05 sot23
    Text: ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


    Original     		PDF ON5520 O-236AB) 2N7002 ON5520 2N7002 NXP MARKING fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code smd TRANSISTOR code marking 05 sot23

    Untitled

    Abstract: No abstract text available
    Text: PMZB300XN 20 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZB300XN DFN1006B-3 OT883B)

    Untitled

    Abstract: No abstract text available
    Text: PMZB380XN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZB380XN DFN1006B-3 OT883B)

    03AF6

    Abstract: No abstract text available
    Text: PMZB790SN 60 V, single N-channel Trench MOSFET 14 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZB790SN DFN1006B-3 OT883B) 03AF6

    Untitled

    Abstract: No abstract text available
    Text: SO T8 83 PMZ290UN 20 V, single N-channel Trench MOSFET 6 November 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless and ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZ290UN DFN1006-3 OT883)

    nxp 544

    Abstract: FET marking codes
    Text: SO T4 16 PMR280UN N-channel TrenchMOS ultra low level FET Rev. 2 — 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


    Original     		PDF PMR280UN nxp 544 FET marking codes

    MARKING CODE 16 transistor sot23

    Abstract: smd code marking HD SOT23
    Text: SO T2 3 PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV31XN O-236AB) MARKING CODE 16 transistor sot23 smd code marking HD SOT23

    marking code m4 SMD Transistor

    Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 fet SMD CODE PACKAGE SOT23 smd code marking HD SOT23
    Text: SO T2 3 PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV31XN O-236AB) 771-PMV31XN-T/R PMV31XN marking code m4 SMD Transistor NXP TRANSISTOR SMD MARKING CODE SOT23 fet SMD CODE PACKAGE SOT23 smd code marking HD SOT23

    nxp pmgd780sn

    Abstract: PMGD780SN
    Text: PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


    Original     		PDF PMGD780SN OT363 SC-88) PMGD780SN nxp pmgd780sn

    FET marking codes

    Abstract: No abstract text available
    Text: SO T4 16 PMR400UN N-channel TrenchMOS ultra low level FET Rev. 2 — 2 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


    Original     		PDF PMR400UN FET marking codes

    smd transistor ja

    Abstract: No abstract text available
    Text: 83B PMZB420UN SO T8 30 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZB420UN DFN1006B-3 OT883B) smd transistor ja

    Untitled

    Abstract: No abstract text available
    Text: 83B PMZB290UN SO T8 20 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZB290UN DFN1006B-3 OT883B)

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    Motorola transistor smd marking codes

    Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
    Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases


    Original     		PDF OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d

    transistor SMD ee

    Abstract: No abstract text available
    Text: Technical Data Sheet 1206 Package Chip Photo Darlington with lnner lens PDT11-21C/TR8 Features ․Fast response time ․High photo sensitivity ․Small junction capacitance ․Package in 8mm tape on 7” diameter reel ․Pb free ․The product itself will remain within RoHS compliant version.


    Original     		PDF PDT11-21C/TR8 PDT11-21C/TR8 NoDPT-0000055 date03-Aug-2009 transistor SMD ee

    transistor mps 13

    Abstract: 75MHZ ICS83032AGI ICS83032I PN9500 3rd Overtone crystal equivalent circuit
    Text: PRELIMINARY Integrated Circuit Systems, Inc. ICS83032I 75MHZ, 3 OVERTONE OSCILLATOR W/DUAL LVCMOS/LVTTL OUTPUTS RD GENERAL DESCRIPTION FEATURES The ICS83032I is a SAS/SATA dual output LVCMOS/LVTTL oscillator and a member of the HiPerClockS HiperClocks™ family of high performance devices from ICS. The ICS83032I uses a 3rd overtone crystal to provide a reference frequency


    Original     		PDF ICS83032I 75MHZ, ICS83032I 75MHz. 900kHz 75MHz 83032AGI transistor mps 13 ICS83032AGI PN9500 3rd Overtone crystal equivalent circuit

    SMD TRANSISTOR MARKING 6B

    Abstract: sas smd transistor 3rd Overtone crystal equivalent circuit PN9500 smd dual transistor f1 75MHZ ICS83032AGI ICS83032AGIT ICS83032I dual transistor 6 pin SMD f1
    Text: DATA SHEET PRELIMINARY ICS83032I Integrated ICS83032I 75MHZ, 3RD OVERTONE OSCILLATOR W/DUAL RD Circuit 75MH Z, 3 OVERTONE OSCILLATOR Systems, Inc. LVCMOS/LVTTL OUTPUTS W/DUAL LVCMOS/LVTTL OUTPUTS GENERAL DESCRIPTION FEATURES The ICS83032I is a SAS/SATA dual output


    Original     		PDF ICS83032I 75MHZ, ICS83032I 75MHz. 900kHz SMD TRANSISTOR MARKING 6B sas smd transistor 3rd Overtone crystal equivalent circuit PN9500 smd dual transistor f1 75MHZ ICS83032AGI ICS83032AGIT dual transistor 6 pin SMD f1

    BUK2114

    Abstract: IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914
    Text: Power Management Power Management 189 Automotive MOSFETs General Purpose Automotive GPA TrenchMOS types in bold red represent new products 190 VDS RDS(ON) @VGS ID (max) SC73 (SOT223) (V) (mΩ) (V) 30 30 5 5 10 5 @ 25°C (A) 75 75 30 13 10 55 BUK6213-30A


    Original     		PDF OT223) BUK6213-30A BUK9213-30A BUK7604-40A BUK9604-40A OT404) OT428) BUK7605-30A BUK9605-30A OT226 BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914

    TEA1620

    Abstract: BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER buk2914-50syts TEA1507 BUK2114-50SYTS TEA1552 PHD78NQ bu4508dx BU2527
    Text: Semiconductors Power Management Selection Guide 2005 page 1 Semiconductors Welcome to Philips’ Power Management selection guide 2005. Inside you will discover just how easily you can tap into the design freedom offered by our Power Management portfolio. Our advanced power technologies and products cover virtually all aspects of


    Original     		PDF

    PD55015-E

    Abstract: PD55015 AN1294 JESD97 PD55015S PD55015S-E PD55015STR-E PD55015TR-E
    Text: PD55015-E PD55015S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 15W with 14dB gain @ 500MHz / 12.5V ■ New RF plastic package


    Original     		PDF PD55015-E PD55015S-E 500MHz PowerSO-10RF PD55015 PowerSO-10RF. PD55015-E AN1294 JESD97 PD55015S PD55015S-E PD55015STR-E PD55015TR-E

    S2185

    Abstract: PD55015-E trimmer 3-30 pf
    Text: PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =15 W with 14dB gain @ 500 MHz/12.5 V Description PowerSO-10RF formed lead


    Original     		PDF PD55015-E Hz/12 PowerSO-10RF PD55015-E PowerSO-10RF. S2185 trimmer 3-30 pf

    PD55015-E

    Abstract: PD55015E 12596 PD55015 AN1294 J-STD-020B PD55015S PD55015S-E PD55015STR-E PD55015TR-E
    Text: PD55015-E PD55015S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =15 W with 14dB gain @ 500 MHz/12.5 V ■ New RF plastic package PowerSO-10RF


    Original     		PDF PD55015-E PD55015S-E Hz/12 PowerSO-10RF PowerSO-10RF. PD55015-E PD55015E 12596 PD55015 AN1294 J-STD-020B PD55015S PD55015S-E PD55015STR-E PD55015TR-E

    Untitled

    Abstract: No abstract text available
    Text: PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =15 W with 14dB gain @ 500 MHz/12.5 V Description PowerSO-10RF formed lead


    Original     		PDF PD55015-E Hz/12 PowerSO-10RF PD55015-E PowerSO-10RF. PD55015-y

    Diode SMD ED 98

    Abstract: elco 330 u RSM-200 sw1 spdt Telefunken 102 M SE smd zener diode code 8M LD11 LD12 MPC821
    Text: Freescale Semiconductor, Inc. Motorola Semiconductor Israel Ltd. MOTOROLA COMMUNICATIONS & ADVANCED Freescale Semiconductor, Inc. CONSUMER TECHNOLOGY GROUP O IC EM R, O CT U ND C IN . MPC821 APPLICATION S E DEVELOPMENT SYSTEM L A C ES ADS E FR USER’S


    Original     		PDF MPC821 MPC821ADS, Diode SMD ED 98 elco 330 u RSM-200 sw1 spdt Telefunken 102 M SE smd zener diode code 8M LD11 LD12