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    TRANSISTOR SMD MARKING G1 3 Search Results

    TRANSISTOR SMD MARKING G1 3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD MARKING G1 3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING g1

    Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5551 C-120 TRANSISTOR SMD MARKING g1 SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT5551 C-120

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5551 C-120

    smd transistor marking g1

    Abstract: TRANSISTOR SMD MARKING g1 smd transistor g1
    Text: Transistors Transistor T SMD Type Product specification KMBT5551 MMBT5551 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Pb-Free Packages are Available 1 0.55 High Voltage Transistors +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base


    Original     		PDF KMBT5551 MMBT5551) OT-23 100MHz smd transistor marking g1 TRANSISTOR SMD MARKING g1 smd transistor g1

    Untitled

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)


    Original     		PDF SI8822 30VGS

    TRANSISTOR SMD MARKING g1

    Abstract: smd transistor g1 ff 0401 transistor g1 smd TRANSISTOR marking G1 sot-23 G1 SOT-23 G1 TRANSISTOR ff 0401 smd transistor marking g1 BFS20
    Text: Transistors SMD Type NPN Medium Frequency Transistor KFS20 BFS20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 25 mA) 0.4 3 Features 1 Very low feedback capacitance (typ. 350 fF). 0.55 Low voltage (max. 20 V) 2 +0.1


    Original     		PDF KFS20 BFS20) OT-23 TRANSISTOR SMD MARKING g1 smd transistor g1 ff 0401 transistor g1 smd TRANSISTOR marking G1 sot-23 G1 SOT-23 G1 TRANSISTOR ff 0401 smd transistor marking g1 BFS20

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Product specification KFS20 BFS20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 25 mA) 0.4 3 Features 1 0.55 Low voltage (max. 20 V) 2 Very low feedback capacitance (typ. 350 fF). +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF KFS20 BFS20) OT-23

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor marking zf SMD TRANSISTOR fet transistor smd zf MOSFET TRANSISTOR SMD MARKING CODE 11 2N7002PV
    Text: 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PV OT666 AEC-Q101 g1 TRANSISTOR SMD MARKING CODE smd transistor marking zf SMD TRANSISTOR fet transistor smd zf MOSFET TRANSISTOR SMD MARKING CODE 11 2N7002PV

    smd transistor marking zf

    Abstract: transistor smd zf 2N7002PV
    Text: 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PV OT666 AEC-Q101 771-2N7002PV-115 2N7002PV smd transistor marking zf transistor smd zf

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: DIODE smd marking CODE NZ bss138ps MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE 771-BSS138PS115
    Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138PS OT363 SC-88) AEC-Q101 771-BSS138PS115 BSS138PS NXP SMD TRANSISTOR MARKING CODE s1 DIODE smd marking CODE NZ MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: g1 TRANSISTOR SMD MARKING CODE DIODE smd marking CODE NZ NXP SMD TRANSISTOR MARKING CODE s1 BSS138PS NXP SMD mosfet MARKING CODE transistor SMD MARKING CODE nz MOSFET TRANSISTOR SMD MARKING CODE 11 smd code marking Nz smd transistor marking A1
    Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138PS OT363 SC-88) AEC-Q101 MOSFET TRANSISTOR SMD MARKING CODE A1 g1 TRANSISTOR SMD MARKING CODE DIODE smd marking CODE NZ NXP SMD TRANSISTOR MARKING CODE s1 BSS138PS NXP SMD mosfet MARKING CODE transistor SMD MARKING CODE nz MOSFET TRANSISTOR SMD MARKING CODE 11 smd code marking Nz smd transistor marking A1

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: 2N7002PS m8 smd transistor g1 TRANSISTOR SMD MARKING CODE smd transistor marking A1 transistor smd marking A1 NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING A1
    Text: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PS OT363 SC-88) AEC-Q101 MOSFET TRANSISTOR SMD MARKING CODE A1 2N7002PS m8 smd transistor g1 TRANSISTOR SMD MARKING CODE smd transistor marking A1 transistor smd marking A1 NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING A1

    sot363 aaa

    Abstract: BSS13
    Text: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138BKS OT363 SC-88) AEC-Q101 771-BSS138BKS115 BSS138BKS sot363 aaa BSS13

    murata REEL label lot number

    Abstract: TRANSISTOR SMD MARKING CODE WS ROHM polystyrene capacitor IPC-7711 ws1101 smd transistor marking da A423801A 23801A J-STD-020B J-STD-033
    Text: !" PRELIMINARY DATASHEET WS1101 Power Amplifier Module for CDMA/AMPS 824-849MHz DATASHEET (DEVICE : WS1101, 3x3 CDMA/AMPS PAM) Issued Date : January 29 , 2005 S. W. Paek Director, Module Group 1 Preliminary Information WM0501-11 !" PRODUCT DESCRIPTION WS1101


    Original     		PDF WS1101 824-849MHz) WS1101, WM0501-11 WS1101 824-849MHz murata REEL label lot number TRANSISTOR SMD MARKING CODE WS ROHM polystyrene capacitor IPC-7711 smd transistor marking da A423801A 23801A J-STD-020B J-STD-033

    Untitled

    Abstract: No abstract text available
    Text: S594TX/S594TXR/S594TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, medium forward transadmittance 24 mS typ.


    Original     		PDF S594TX/S594TXR/S594TXRW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: S593TX/S593TXR/S593TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, very high forward transadmittance 40 mS typ.


    Original     		PDF S593TX/S593TXR/S593TXRW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R D-74025 02-May-05

    Untitled

    Abstract: No abstract text available
    Text: S593TX/S593TXR/S593TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, very high forward transadmittance 40 mS typ.


    Original     		PDF S593TX/S593TXR/S593TXRW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: S594TX/S594TXR/S594TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, medium forward transadmittance 24 mS typ.


    Original     		PDF S594TX/S594TXR/S594TXRW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R D-74025 02-May-05

    Untitled

    Abstract: No abstract text available
    Text: S595TX/S595TXR/S595TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, high forward transadmittance


    Original     		PDF S595TX/S595TXR/S595TXRW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R D-74025 02-May-05

    SMD TRANSISTOR MARKING DE

    Abstract: TSDF54040 smd sot-363 rf amplifier smd wd4 smd transistor g1
    Text: TSDF54040 Vishay Telefunken Dual - MOSMIC– two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF TSDF54040 D-74025 16-Mar-99 SMD TRANSISTOR MARKING DE TSDF54040 smd sot-363 rf amplifier smd wd4 smd transistor g1

    TSDF52424

    Abstract: AGC Amplifiers smd RF low noise sot-363 9296
    Text: TSDF52424 Vishay Telefunken Dual - MOSMIC– two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF TSDF52424 05-Mar-99 TSDF52424 AGC Amplifiers smd RF low noise sot-363 9296

    Untitled

    Abstract: No abstract text available
    Text: S595TX/S595TXR/S595TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, high forward transadmittance


    Original     		PDF S595TX/S595TXR/S595TXRW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R 08-Apr-05

    TRANSISTOR SMD MARKING g1

    Abstract: TSDF53030
    Text: TSDF53030 Vishay Telefunken Dual - MOSMIC– two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		PDF TSDF53030 88/540/EEC 91/690/EEC 05-May-99 TRANSISTOR SMD MARKING g1 TSDF53030

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF NX7002BKXB DFN1010B-6 OT1216)