oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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sf 128 transistor
Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.
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SC73P2602
SC73P2602
SC73C16
sf 128 transistor
TRANSISTOR SF 128
Triode 8050
marking P53 transistor
ic marking k52
SC73P16
bd 8050 TRANSISTOR
part MARKING k48
marking k47
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Untitled
Abstract: No abstract text available
Text: PNP Silicon Switching Transistor SMBT 4126 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4126 sC3 Q68000-A8549 B SOT-23 E C Maximum Ratings
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Q68000-A8549
OT-23
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D1835 transistor
Abstract: TRANSISTOR D1835 2SD1835
Text: 2SD1835 Ordering number : EN2158B SANYO Semiconductors DATA SHEET 2SD1835 NPN Epitaxial Planar Silicon Transistor Driver Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes
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EN2158B
2SD1835
D1835 transistor
TRANSISTOR D1835
2SD1835
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C3332
Abstract: 2SC3332S 2sc3332
Text: 2SC3332 Ordering number : EN1334E SANYO Semiconductors DATA SHEET 2SC3332 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown
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EN1334E
2SC3332
C3332
2SC3332S
2sc3332
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN1334F 2SC3332 Bipolar Transistor 160V, 0.7A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide SOA and highly resistant to breakdown Adoption of MBIT process Specifications
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EN1334F
2SC3332
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN1334E 2SC3332 Bipolar Transistor 180V, 160A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown Adoption of MBIT process Specifications
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EN1334E
2SC3332
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D1835 transistor
Abstract: TRANSISTOR D1835
Text: Ordering number : EN2158B 2SD1835 Bipolar Transistor 50V, 2A, Low VCE sat , NPN Single NP http://onsemi.com Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage
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EN2158B
2SD1835
D1835 transistor
TRANSISTOR D1835
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Untitled
Abstract: No abstract text available
Text: PHP/PHU101NQ03LT TrenchMOS logic level FET Rev. 02 — 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 TO-220AB
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PHP/PHU101NQ03LT
PHP101NQ03LT
O-220AB)
PHU101NQ03LT
OT533
OT533
MBB076
MBK106
MBK915
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SA1463 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER M INI MOLD D E S C R IP T IO N P A C K A G E D IM E N S IO N S The 2 SA 1 4 6 3 is designed for power amplifier and high speed switching applications. In mMlimttert FEATURES
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2SA1463
2SA1463
SC3736
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Untitled
Abstract: No abstract text available
Text: KSA1244 PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING • Low Collector Emitter Saturation Voltage • Complement to K SC3074 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Sym bol - 60 V Collector Emitter Voltage
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KSA1244
SC3074
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Untitled
Abstract: No abstract text available
Text: KSA1241 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to K SC3076 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic V cB O Sym bol -5 5 V Collector Emitter Voltage
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KSA1241
SC3076
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE D • 7^07*41 000CH71 13T » S A K J Silicon NPN Triple Diffused Planar ^ ☆Switching Transistor SC3890 Application Example : S S - fs e Outline Drawing 4 . . FM20 Switching Regulator and General Purpose Electrical Characteristics
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000CH71
SC3890
2SC3890
10Omax
100max
400mm
MT-25
T0220)
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Switching Transistor SMBT 4126 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4126 sC3 Q68000-A8549 B SOT-23 E C Maximum Ratings
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Q68000-A8549
OT-23
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2SA1255
Abstract: 2SC3138 C3138
Text: T O S H IB A 2SC3138 TO SH IBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 SC313 8 HIGH VOLTAGE SW ITCHING APPLICATIONS U n it in mm h 0 .5 -0 .3 TTicrh VnlfflCTi» • = 9 .0 fW' tv-IV-'T! n 1' e • -
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2SC3138
2SA1255
O-236MOD
SC-59
2SA1255
2SC3138
C3138
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BUK202-50Y
Abstract: buk20250y
Text: Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured
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BUK202-50Y
BUK202-50Y
buk20250y
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1013C
Abstract: 2SC3090 5.1b2 EN1013C ir1014
Text: Ordering number :EN1013C I 2SC3090 NO.X013C NPN Triple Diffused Planar Silicon Transistor For Switching Regulators Features . High breakdown voltage VCgQ^800V . . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25 C Collector-to-Base Voltage
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EN1013C
1013C
2SC3090
PWs300ps
1013C
2SC3090
5.1b2
EN1013C
ir1014
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2sj511
Abstract: No abstract text available
Text: TOSHIBA 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1.6MAX. -*J-*
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2SJ511
2sj511
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J956
Abstract: 2SA1541 T0126 T0-126ML 2sc3956
Text: I Ordering number: EN 2440A | 2SA1541/2SC3956 SA\YO PNP/NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications I Applications . H igh-definition CRT display video output, wide-band amp Features . High gain-bandwidth product f^=300MHz
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2440a
2SA1541/2SC3956
300MHz)
200Vmin)
T0126
2SA1541
2SC3956
41/2SC
J707b
J956
T0-126ML
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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BC337 pnp transistor
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA= 2 5 t C haracteristic Sym bol Collector-Em itter Voltage
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BC327/328
BC337/BC338
SC327
BC328
BC327
BC337 pnp transistor
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sa-800
Abstract: 2SC3151
Text: Ordering num ber:EN 1070C F SAW O i 2 SC3151 NO.1070C NPN Triple Diffused Planar Silicon Transistor F or S w i t c h i n g Re g u l a t o r Features . High breakdown voltage . High switching speed . Wide ASO Vq j o -^OOV A b s o l u t e Maximum R at in g s a t Ta=250c
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1070C
2SC3151
300ps,
Cycled10%
sa-800
2SC3151
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