S9014M
Abstract: S9015M
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP
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WBFBP-03B
S9015M
WBFBP-03B
S9014M
S9014M
S9015M
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP
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WBFBP-03B
S9015M
WBFBP-03B
S9014M
-10mA
30MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP
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WBFBP-03B
S9015M
WBFBP-03B
S9014M
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M
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WBFBP-03B
WBFBP-03B
S9014M
S9015M
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M
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WBFBP-03B
WBFBP-03B
S9014M
S9015M
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S9015
Abstract: S9015M S9014M
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M
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WBFBP-03B
WBFBP-03B
S9014M
S9015M
S9015
S9015M
S9014M
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S9014c
Abstract: transistor S9014C PSS9014C s9014-c
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PSS9014C NPN general purpose transistor Product specification 2002 Mar 15 Philips Semiconductors Product specification NPN general purpose transistor PSS9014C FEATURES PINNING • High power dissipation: 500 mW
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M3D186
PSS9014C
MAM279
SCA74
613514/01/pp8
S9014c
transistor S9014C
PSS9014C
s9014-c
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s9014c
Abstract: transistor s9014c PSS9014C s9014-c s9014
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9014C NPN general purpose transistor Product specification Supersedes data of 2002 Mar 15 2002 Sep 20 Philips Semiconductors Product specification NPN general purpose transistor PSS9014C PINNING FEATURES
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M3D186
PSS9014C
MAM279
SCA74
613514/02/pp8
s9014c
transistor s9014c
PSS9014C
s9014-c
s9014
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s9014c
Abstract: SC-43A PSS9014C S9014
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9014C NPN general purpose transistor Product specification Supersedes data of 2002 Sep 20 2004 Aug 10 Philips Semiconductors Product specification NPN general purpose transistor PSS9014C PINNING FEATURES
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M3D186
PSS9014C
MAM279
SCA76
R75/03/pp7
s9014c
SC-43A
PSS9014C
S9014
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Untitled
Abstract: No abstract text available
Text: S9015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER * Complement to S9014LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V Package:SOT-23
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S9015LT1
S9014LT1
-100mA
OT-23
-100mA
-10mA
062in
300uS
S9015LT1
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-323
S9014W
S9015W
100mA,
30MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-323
S9014W
S9015W
100mA,
30MHz
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
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OT-23
S9014LT1
S9015LT1
30MHz
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S9014L
Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L
Text: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW
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S9014LT1
S9015LT1
100mA
225mW
OT-23
100mA
062in
300uS
S9014LT1
S9014L
sot-23 MARKING O7
S9014LT1-L
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S9015 SOT-23
Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9015
OT-23
S9014
-100A,
-100mA,
-10mA
S9015 SOT-23
m6 marking transistor sot-23
marking M6
S9015
s9015 transistor
s9015 SOT23 transistor
transistor S9014
s9014 equivalent
S9015 M6
transistor SOT23 S9015
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transistor SOT23 J6
Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9014
OT-23
S9015
30MHz
transistor SOT23 J6
S9014 SOT-23
transistor S9014
S9014
S9014 sot-23 J6
s9014 equivalent
marking J6
s9015 SOT23 transistor
j6 sot23
S9014 J6
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S9015
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9015
OT-23
S9014
-100mA,
-10mA
30MHz
S9015
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9014
OT-23
S9015
30MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9015
OT-23
S9014
-100mA,
-10mA
30MHz
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transistor S9014
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9014
OT-23
S9015
30MHz
transistor S9014
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transistor SOT23 J6
Abstract: Transistor S9014 transistor SOT-23 marking code J6 S9014 S9014 sot-23 J6 s9014 equivalent s9014 TRANSISTOR j6 sot23 J6 SOT 23 S9014 SOT-23
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9015. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9014 Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION
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S9014
S9015.
OT-23
BL/SSSTC083
transistor SOT23 J6
Transistor S9014
transistor SOT-23 marking code J6
S9014
S9014 sot-23 J6
s9014 equivalent
s9014 TRANSISTOR
j6 sot23
J6 SOT 23
S9014 SOT-23
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Untitled
Abstract: No abstract text available
Text: tgr | « FORWARD INTERNATIONAL ELECTRONICS LID. S9015 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCYJXJW NOISE AMPLIFIER Package: TO-92 * Complement to S9014 * High Total Power Dissipation Pc=450mW * High Hfe And Good Linearity
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S9015
S9014
450mW
-100uA
-100mA
-10mA
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Untitled
Abstract: No abstract text available
Text: S9014S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER LOW LEVEL & LOW NOISE * * * * * Complement to S9015S Collector Current :Ic=10OmA Collector-Emitter Voltage: Vceo=45V. High Total Power Dissipation: pD=225mW
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S9014S
S9015S
10OmA
225mW
100uA
100mA
10VIe
300uS,
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS LTD. S9015S SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY,LOW NOISE AMPLIFIER * Complement to S9014S * Collector C urrent: Ic=-100mA * Collector-Emitter Voltage: Vceo=-45V. ABSOLUTE MAXIMUM RATINGS a t TandHZ5°C
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S9015S
S9014S
-100mA
-100uA
-100mA
-10mA
062ii
300uS
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