Untitled
Abstract: No abstract text available
Text: SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
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SiP4282A
SC75-6
SiP4282A-3
18-Jul-08
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S7-1200
Abstract: 6ES7222-1BF30-0XB0 transistor power 5w SIMATIC S7-1200 S71200 Siemens Power Connectors simatic siemens SIEMENS SIMATIC S7 siemens power transistor siemens cable s7
Text: 6ES7222-1BF30-0XB0 Page 1 Product data sheet 6ES7222-1BF30-0XB0 SIMATIC S7-1200, DIGITAL OUTPUT SM 1222, 8 DO, 24V DC, TRANSISTOR 0.5A Supply voltages Rated value permissible range, lower limit DC 20.4 V permissible range, upper limit (DC) 28.8 V Short-circuit protection
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6ES7222-1BF30-0XB0
S7-1200,
0000000000000000E
-48nics
S7-1200
6ES7222-1BF30-0XB0
transistor power 5w
SIMATIC S7-1200
S71200
Siemens Power Connectors
simatic siemens
SIEMENS SIMATIC S7
siemens power transistor
siemens cable s7
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SC75
Abstract: SC-75 SiP4282A
Text: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
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SiP4282A
SC75-6
SiP4282A-3
18-Jul-08
SC75
SC-75
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6ES7222-1BH30-0XB0
Abstract: S7-1200 siemens cable connection s7 siemens simatic s7 power supply power supply LED 5w
Text: 6ES7222-1BH30-0XB0 Page 1 Product data sheet 6ES7222-1BH30-0XB0 SIMATIC S7-1200, DIGITAL OUTPUT SM 1222, 16 DO, 24V DC, TRANSISTOR 0.5A Supply voltages Rated value permissible range, lower limit DC 20.4 V permissible range, upper limit (DC) 28.8 V Short-circuit protection
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6ES7222-1BH30-0XB0
S7-1200,
0000000000000000E
6ES7222-1BH30-0XB0
S7-1200
siemens cable connection s7
siemens simatic s7 power supply
power supply LED 5w
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Untitled
Abstract: No abstract text available
Text: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device
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SiP4282A
SC75-6
SiP4282A-3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB75N06-12L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB75N06-12L
18-Jul-08
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6ES7223-1BL30-0XB0
Abstract: 16DO SM1223 1223 digital transistor 16DI S7-1200
Text: 6ES7223-1BL30-0XB0 Page 1 Product data sheet 6ES7223-1BL30-0XB0 SIMATIC S7-1200, DIGITAL I/O SM 1223, 16DI / 16DO, 16DI DC 24 V, SINK/SOURCE, 16DO, TRANSISTOR 0.5A Supply voltages Rated value 24 V DC Yes permissible range, lower limit DC 20.4 V permissible range, upper limit (DC)
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6ES7223-1BL30-0XB0
S7-1200,
6ES7223-1BL30-0XB0
16DO
SM1223
1223 digital transistor
16DI
S7-1200
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6ES7223-1BH30-0XB0
Abstract: 1223 digital transistor SM1223 S7-1200 SIMATIC S7-1200
Text: 6ES7223-1BH30-0XB0 Page 1 Product data sheet 6ES7223-1BH30-0XB0 SIMATIC S7-1200, DIGITAL I/O SM 1223, 8DI / 8DO, 8DI DC 24 V, SINK/SOURCE, 8DO, TRANSISTOR 0.5A Supply voltages Rated value DC 24 V Yes permissible range, lower limit DC 20.4 V permissible range, upper limit (DC)
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6ES7223-1BH30-0XB0
S7-1200,
0000000000000000E
6ES7223-1BH30-0XB0
1223 digital transistor
SM1223
S7-1200
SIMATIC S7-1200
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transistor s72
Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Text: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621K40A41
Amperes/1000
transistor s72
S72 Transistor
KS621K40A41
transistor b 1417
transistor s70
powerex ks62
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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BUK445
Abstract: BUK445-60A BUK445-60B
Text: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711002b
BUK445-60A/B
-SOT186
DS/V-12/
ID/100
BUK445
BUK445-60A
BUK445-60B
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transistor fp 1016
Abstract: BFQ34T ON4497 FP 801 UBB361
Text: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The
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ON4497)
BFQ34T
transistor fp 1016
BFQ34T
ON4497
FP 801
UBB361
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Transistor BF988
Abstract: BF988 bf988 philips semiconductor PHILIPS MOSFET MARKING philips bf988 dual gate fet MC3344 mosfet 440 mhz dual gate mosfet in vhf amplifier dual gate
Text: • 711082b QQb7SbM 2Ö4 IPHIN Philips Semiconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfs • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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711082b
BF988
Transistor BF988
BF988
bf988 philips semiconductor
PHILIPS MOSFET MARKING
philips bf988
dual gate fet
MC3344
mosfet 440 mhz
dual gate mosfet in vhf amplifier
dual gate
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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JANTXV2N2222AUA
Abstract: transistor s71 2N2222AUA
Text: 0 . OPTEK Product Bulletin JA N TX, JA N TXV, 2N 2222A U A Sep tem ber 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA Features • Ceramic surface mount package • Small package to minimize circuit board area • Hermetically sealed
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2N2222AUA
2N2222AUA
MIL-PRF-19500/255
JANTX/TXV2N2222AUA
00D31Ã
JANTXV2N2222AUA
transistor s71
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OC70
Abstract: C703 diode ev C703 MOC70
Text: MOTOROLA h SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili con NPN phototransistor in a molded plastic housing. A slot in the housing between the
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MOC70
354G-01
OC70
C703 diode
ev C703
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MCB700
Abstract: n7000 A 673 C2 transistor 2n7000 Lk53
Text: Philips Components 2N7000 Data sheet status Product specification date o f Issue October 1990 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Low R 0S on SYMBOL • Direct interface to C-MOS, TTL, etc. Vos drain-source voltage
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2N7000
VeSimat25
003b232
ZN7U00
bLS3T31
003b233
MCB700
n7000
A 673 C2 transistor
2n7000
Lk53
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MMBT6520
Abstract: transistor d 2389
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor M M B T6520LT1 PNP Silicon COLLECTOR Motorola Preferred Device 3 2 EMITTER CASE 3 1 8 -0 8 , STYLE 6 S O T -23 TO -236A B MAXIMUM RATINGS Rating Symbol Value VCEO -350 Vdc Collector-Base Voltage
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T6520LT1
-236A
MMBT6520LT1
1/2MSD7000'
3b7E55
MMBT6520
transistor d 2389
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j 6910
Abstract: transistor j 6910
Text: S IE M E N S PNP Silicon AF Transistor • • • • • BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 68 NPN Type Marking Ordering Code (tape and reel) Pin Coni igura tion
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Q62702-C2130
Q62702-C2131
Q62702-C2132
Q62702-C2133
OT-223
EHP002M
fiS35fe05
j 6910
transistor j 6910
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transistor zo 103 MA 7S 738
Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
Text: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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BFQ72
Q62702-F776
fl235b05
00b714S
transistor zo 103 MA 7S 738
SiEMENS PM 350 98
VCE05181
siemens 350 98
siemens Pm 90 87
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BF981
Abstract: bf981 TRANSISTOR sot103
Text: 7110fl2b G0b7S53 MTT « P H I N BF981 J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r VHF applications, such as VHF television tuners, FM tuners and professional com m uni
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7110fl2b
G0b7S53
BF981
7110fl2b
00b7SS7
7Z82691
7Z82690
711Dfl2b
BF981
bf981 TRANSISTOR
sot103
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Untitled
Abstract: No abstract text available
Text: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve
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bbS3T31
BLV98CE
OT171
bb53T31
MCA924
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