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    TRANSISTOR QZ Search Results

    TRANSISTOR QZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR QZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3703

    Abstract: No abstract text available
    Text: Qzn&tij aSttnL-ConcLuitoi ZPtoeLata* TELEPHONE: 973 376-2882 203TERNAVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6008 USA FAX: (973) 3764880 2N3703 P-N-P SILICON TRANSISTOR *CASE OUTLINE ALl °'MENSI°NS ir> 1 *' —•- INCHES F -*- ~— 0-015 (NOTE A)


    Original     		PDF 203TERNAVE. 2N3703 t0010-Â 2n3703

    19Sg

    Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
    Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.


    Original     		PDF MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR

    Zener diode DW

    Abstract: diode 1039 transistor 1039 bav70 transistor zener wafer MMBZ52xxB 1N4148W BAS16TW BAS20W BAV19W
    Text: PRODUCT CHANGE NOTICE Contact Date: February 4, 2005 Implementation Date: Immediate Alert Category: Discrete Semiconductor DCS/PCN-1039 Alert Type: PCN #: Wafer Fab Site Qualification PCN #: 1039 TITLE Qualification of Fabrication Site for Switching, Zener and Small Signal Transistor Wafer


    Original     		PDF DCS/PCN-1039 BAV70 BAV70DW MMBZ46xxx MMSZ46xxx TLC363Cxxxx BZX84CxxxT MMBZ52xxB MMSZ52xxB MMBT3906 Zener diode DW diode 1039 transistor 1039 bav70 transistor zener wafer MMBZ52xxB 1N4148W BAS16TW BAS20W BAV19W

    PCR 406 J transistor

    Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
    Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim


    Original     		PDF MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553

    SWITCHING TRANSISTOR C144

    Abstract: TRANSISTOR C144 LQ10D311 C144 TRANSISTOR c144 TRANSISTOR D640 DG136 D639 D639 TRANSISTOR QZ-19-3F01
    Text: LQ10D311 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 10.4" The SHARP LQ10D311 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,


    Original     		PDF LQ10D311 LQ10D311 SWITCHING TRANSISTOR C144 TRANSISTOR C144 C144 TRANSISTOR c144 TRANSISTOR D640 DG136 D639 D639 TRANSISTOR QZ-19-3F01

    u101b

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


    OCR Scan     		PDF uPA101B 14-pin tPA101G u101b

    BUK426-200A

    Abstract: TTPC BUK426-200B
    Text: 7 = 3 ? - / / Philips Com ponents BUK426-200A/B Data sheet status Product specification date of issue March 1991 PHILIPS INTERNATIONAL PowerMOS transistor ^ GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic full pack envelope.


    OCR Scan     		PDF BUK426-200A/B BUK426 -200A -200B -SOT199 BUK426-200A TTPC BUK426-200B

    D1571

    Abstract: AA0463 st cpcap zy 406 D157 DSP56300 DSP56301 G30-88 G38-87 series T212 data
    Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56301 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56301 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this


    OCR Scan     		PDF DSP56301 AA0500 b3b72MA D1571 AA0463 st cpcap zy 406 D157 DSP56300 G30-88 G38-87 series T212 data

    2N7002 MARKING

    Abstract: N7002 N-700-2 2N7002 X2N7002 2N7002 v02 RG252
    Text: N-Channet Enhancement-Mode MOS Transistor CORPORATION \J 2N7002 DESCRIPTION ORDERING INFORMATION Calogic's 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown Bv and


    OCR Scan     		PDF /170S 2N7002 N7002 OT-23 2N7002 X2N7002 443S2 000GT12 2N7002 MARKING N-700-2 2N7002 v02 RG252

    MJE12007

    Abstract: 221A-04 MJE-12007
    Text: MOTQRCLA SC XSTRS/R 15E 0 F I b3b?2S4 0005301 Ô | T - 3Î- I/ MOTOROLA SEMICONDUCTOR MJE12007 TECHNICAL DATA 2.5 A M P E R E H O RIZON TAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . . . specifically designed for use in small screen black and white


    OCR Scan     		PDF MJE12007 MJE12007 221A-04 MJE-12007

    2SA847

    Abstract: 2SA847A knx-1 low noise preamplifier knx1
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA847A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA847A is a silicon PNP epitaxial type high voltage low frequency OUTLINE DRAWING *5 .6 M A X low noise transistor. It has low noise at super low frequency range,low pulse


    OCR Scan     		PDF 2SA847A 2SA847A -120V 150MHz t270Hz 270Hz 2SA847 knx-1 low noise preamplifier knx1

    Untitled

    Abstract: No abstract text available
    Text: P h ilip s S e m ic o n d u c to rs-S ig n e llc s F A S T T T L L o g ic S e rie s SECTION 3 Circuit Characteristics INPUT STRUCTURES There are three types of input structures used in FAST circuits: diffusion diode, PNP vertical transistor, and NPN transistor. Each of these


    OCR Scan     		PDF F3037 F3040 F30244 F30245 F30640

    ARDV sot 23

    Abstract: DS332P
    Text: June 1997 FAIRCHILD M ICON DUCTOR tm NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF NDS332P ARDV sot 23 DS332P

    QM30HA-H

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES | QM30HA-HB 1 S MEDIUM POWER SWITCHING USE _ INSULATED TYPE QM30HA-HB Collector c u rre n t.30A Collector-em itter v o lta g e 6 00V * hFE DC current g a in .


    OCR Scan     		PDF QM30HA-HB QM30HA-HB E80276 E80271 QM30HA-H

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEMICONDUCTOR May 1996 tm NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, - high cell density, DMOS technology. This very high


    OCR Scan     		PDF NDS8435

    9952a

    Abstract: No abstract text available
    Text: FAIRCHILD February 1996 SEM ICONDUCTOR NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan     		PDF NDS9952A 9952a

    2SK1488

    Abstract: SC-65
    Text: TOSHIBA Discrete Sem iconductors 2SK1488 Field Effect Transistor Unit in mm Silicon N Channel MOSType jt-MOS III.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance ' Rds(ON) =


    OCR Scan     		PDF 2SK1488 2SK1488 SC-65

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 32K-WORD 32-BIT uPD431632L 768-word 32-bit S100GF-65-8ET PD431632L. PD431632LGF

    transistor qz

    Abstract: qm50dy-2h Mitsubishi transistor
    Text: MITSUBISHI TRANSISTOR MODULES ! QM50DY-2H 1 i MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2H 1C V c ex hFE Collector current. 50A C ollector-em itter vo lta g e 1000V DC current g a in .75 Insulated Type UL Recognized


    OCR Scan     		PDF QM50DY-2H QM50DY-2H E80276 E80271 transistor qz Mitsubishi transistor

    sot-23 MARKING 25J

    Abstract: sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222S KTN2222AS SOT-23
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=10nA M ax. ; V ce=60V, V eb <o f f )=3 V . • Low Saturation Voltage


    OCR Scan     		PDF KTN2222S/AS 150mA, KTN2907S/2907AS. KTN2222S KTN2222AS 10x8x0 sot-23 MARKING 25J sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222AS SOT-23

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 32K-WORD 32-BIT uPD431632L 768-word 32-bit

    IBM vga registers

    Abstract: PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9
    Text: IC*- ' fl* CL-GD6340 Preliminary Data Sheet 'CIRRUS LOGIC FEATURES m 100% IBM VGA compatible at the display level • Supports SimulSCAN — displays on CRT and LCD simultaneously ■ Providesfull-colorVGAon8-or512-colorTFT Thin Film Transistor and other active-matrix or color


    OCR Scan     		PDF Providesfull-colorVGAon8-or512-colorTFT CL-GD6340 CL-GD6340 IBM vga registers PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM ICONDUCTO R tm NDS8433 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P -C hannel Features en ha n ce m e n t m o de pow er field effect • transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS8433