Untitled
Abstract: No abstract text available
Text: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance 5 nH typical
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VS-GP250SA60S
E78996
OT-227
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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2sk1060
Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Text: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104
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2SK104
2SK105
2SK162
2SK163
2SK193
2SK195
2SK505
X10679EJCV0SG00
1996P
2sk1060
2SK type
transistor 2sk
transistor 2sk193
2SK105 Datasheet
transistor 2sk162
transistor SST 250
2SK1794
2SK104
2SK2234
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Untitled
Abstract: No abstract text available
Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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VS-GT140DA60U
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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VS-GT140DA60U
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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A 3150 igbt driver
Abstract: VS-GT140DA60U 60APH06
Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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VS-GT140DA60U
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
A 3150 igbt driver
VS-GT140DA60U
60APH06
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Untitled
Abstract: No abstract text available
Text: PJ2N9015 PNP Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE y High total power dissipation PT=450mW TO-92 SOT-23 y High hFE and good linearity y Complementary to PJ2N9014 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Pin : 1. Emitter
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PJ2N9015
450mW)
PJ2N9014
OT-23
PJ2N9015CT
PJ2N9015CX
OT-23
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DP2-40E
Abstract: DP2-42E DP2-22 DP2-41E DP2-40N 703065 S2-0200 DP2-20 DP2-20F DP2-62E
Text: DP2 SERIES High-performance Digital Pressure Sensor Complete functionality! Selection from a wide lineup * Passed the UL 991 Environment Test * UL 61010C-1 compatible, Passed the UL 991 Environment Test based on SEMI S2-0200. [Category applicable for semiconductor manufacturing: TWW2, Process Equipment]
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61010C-1
S2-0200.
61010C-1]
UL991,
S2-0200]
DPX-04
SUS304)
DP2-40E
DP2-42E
DP2-22
DP2-41E
DP2-40N
703065
S2-0200
DP2-20
DP2-20F
DP2-62E
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Untitled
Abstract: No abstract text available
Text: BIG IDEAS IN PowerTech BIG POWER ’ • HO AM PERES PT- 6 00 PT- 601 PT- 602 SILICON NPN TRANSISTOR FEATURES: v C E s a t 0 .7 5 V V @ 60 A . 1 .5 V @ 6 0 A BE 5 m în @ 1 1 0 A 'F E 2 .5 |i sec I S /b ■ " S /b '
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photo transistor til 78
Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Text: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083
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ECG3040
ECG3041
ECG3042
ECG3043
ECG3044
ECG3045
photo transistor til 78
ecg 3041
ECG3047
3094 transistor
ECG3090
ECG3086
ECG3098
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Untitled
Abstract: No abstract text available
Text: KSD1692 NPN SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C T O -1 2 6 HIGH POWER DISSIPATION : PT = 1.3W T .= 25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage
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KSD1692
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2SC16
Abstract: No abstract text available
Text: TOSHIBA { D I S C R E TE /O PT O} 3T • - DËTjTOTTaSO □ OOlfH'í 2 - 1 9097250 TOSHIBA DI SC R E T E / O P T O > 39C 01899 □ SEMICONDUCTOR TECHNICAL DATA * 2 b ? * ì? a * TOSHIBA TRANSISTOR 2S01677 SILICON NPN EPITAXIAL PLANAR INDUSTRIAL APPLICATIONS
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2S01677
270UHz)
2SC16
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2SC2506
Abstract: T6M40F1 2SC250 ok01
Text: S H I N D E N G E N E L E C T R I C MFG MIE 021=1307 J> 0000002 1 ISHE J • Outline Dimensions gMAX 10 • Ratings Item Absolute Maximum TI V cbo V ceo Base Current Transistor Dissipation Collector to Em itter Sustaining Voltage 12 Icp Ib Ib p Pt V ceo su s
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2SC2506
T6M40F1
10//Sr
2SC2506
T6M40F1
2SC250
ok01
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NE46734
Abstract: cm3x sot89 "NPN TRANSISTOR"
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE46734 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT FEATURES LOW NOISE FIGURE UNMATCHED 4: 2.4 dB at 500 MHz 2.3 dB TYP at 200 MHz HIGH S21 GAIN4: 12 dB at 500 MHz 20 dB TYP at 200 MHz HIGH PT LOW COST DESCRIPTION Collector Current, Ic (mA)
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NE46734
NE46734
2SC2954
IS12I
OT-89)
cm3x
sot89 "NPN TRANSISTOR"
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avantek
Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
Text: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz
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AT-42035
AT-42035
microwave64
avantek
Avantek, Inc
321E
T-31-21
8v-312
Avantek amplifier 8 12 GHz
Avantek amplifier 12.5 sa
AVANTEK oscillator
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D67DE5
Abstract: Q6015at
Text: LO R A S I N D U S T R I E S INC MEE D • 55ÛG44Ô QDG003D 7 « L O R A TRANSISTOR PACKAGE TYPE PART No. DESCRIPTION H fe Pt 25°C Watts iç Amps VEBO Volts VCEO Volts VCBO Volts !ç H fe Amps - 250 250 300 300 5.0 5.0 5.0 5.0 125.00 50.00 S0.00 50.00
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QDG003D
Q2006LT
Q4006LT
Q6006LT
Q4006AT
Q6006AT
T0220AB/I
T0220AByr
GIT03
D67DE5
Q6015at
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transistor et 454
Abstract: 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46
Text: NEC j b ^ > '> 9 Silicon T ra n s is to r 2SC1842 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier $Së/FEATU RES ^ • ^ H / P A C K A G E D IM EN SIO N S 7'Jt, O fftf;X f Pt, ffl t r —7" u =J - Unit : mm ¿"COfiJg|?£Í9j4'fxít?lt>I
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2SC1842
SC-43A
transistor et 454
2SC1842
JE 33
PA33
SC-43A
JE 720 transistor
transistor afr 46
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transistor Cd 18 p
Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor
Text: 2SA1759 Transistor, PNP Features D im ensions Units : mm • av a ila b le in M P T 3 (M PT, S C -6 2 ) p a cka g e • p a c k a g e m arking: 2 S A 1 7 5 9 ; AH-*, w h ere ★ is hFE co d e • high breakdow n voltage, 2SA1759 (MPT3) V ceo = “ 400 V
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2SA1759
SC-62
transistor Cd 18 p
ic MARKING FZ
2SA1759
7028 TRANSISTOR
marking 7T transistor
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D1088
Abstract: 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33
Text: v ' J = i > h 7 > ÿ ^ Silic o n T ra n sisto r 2SC2001 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier 4$ ^JK S /P A C K A G E DIMENSIONS »/F E A T U R E S U nit : mm 5.2 MAX. < , S hFE -r U t f f c / J o Pt = 600 mW L s 7 f if à f t m æ T T o
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2SC2001
02SA952tl
SC-43B
D11738JJ3V0DS00
10lfllAfl
D1088
2SC200
D1173
2SC2001
transistor 2sc2001
C10535J
C10943X
PA33
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D60T1520
Abstract: D60T152010 D62T D62T1520 D62T152010 Scans-0014004 powerex to-200
Text: ’POWEREX INC 7294621 POWEREX Tfl INC 98D f ^ W V E flE A DE |? ET 4 b a i DDOEbTl 7 02691 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 D D60T1520 D62T1520 Tentative NPN Power Switching Transistors 200 Amperes 150 Volts Features:
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D60T1520
D62T1520
D62T1520
Amperes/150
D60T/D62T1520
060T/D62T1520
D60T1520
D60T152010
D62T
D62T152010
Scans-0014004
powerex to-200
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Untitled
Abstract: No abstract text available
Text: POUETREX 7294621 m N INC ejß]> ]> POWEREX E H m INC 7 2 ^ 2 1 0002431 3 98 D 02431 E X KEE525B0 Powerex, Inc., Hlllls Street, Yaungwood, Pennsylvania 15697 412 925-7272 In te g r a l B a k e r C la iìip Six-Darlington Transistor Module 8 Amperes/300 Volts
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KEE525B0
Amperes/300
KEE525B0
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bi 370 transistor e
Abstract: Westinghouse diode bi 370 transistor Westinghouse power diode WESTINGHOUSE ELECTRIC ke92 KE92450510 westinghouse power transistor transistor al fm westinghouse ac motor
Text: 7 2 9 4 6 2 1 P O W E R E X INC ¡bi 7 5 T 4 LiH 1 ODOQTSB Six/Pac Darlington TRANSISTOR „ Modules Dim A B C D E F G H J K L M N O P Q R S T U V w X Y Inches 3.70 3.150+.020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50
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KE92450510
KE92450510
bi 370 transistor e
Westinghouse diode
bi 370 transistor
Westinghouse power diode
WESTINGHOUSE ELECTRIC
ke92
westinghouse power transistor
transistor al fm
westinghouse ac motor
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SPK1300
Abstract: SPK1150 327B4 SPK1350 Solitron SPK1100 Solitron Transistor Solitron Devices
Text: 8368602 SOLITRON DEVICES INC _ fib 86D 02439 D E jfl3 b flb D 5 n . -rr 3 3 - □ □ 0 5 4 3 c] I i - !" Now There's A Choice! IS O LA T E D A N D G R U 1 D E D D A R U E M iT O If P O V S E R M O D U L E S Paralleled Up To 10,000 Amps DUAL ISOLATED
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1-A30,
DT96309
SPK1300
SPK1150
327B4
SPK1350
Solitron
SPK1100
Solitron Transistor
Solitron Devices
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MP4024 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P 4 024 HIGH PO W ER SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE
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MP4024
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2N5301
Abstract: No abstract text available
Text: 836860 2 SOL ITRON DEV ICES INC t.1 3 DE fl3t.flt.02 0001313 t. | ¡¿¡olitron Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS NO.: 2N5301 TYPE: NPN E P I BASE CASE: TO-3 • . 40 V Voltage, Collector to Emitter (V cE0 . .
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2N5301
5725E
2N5301
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