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    TRANSISTOR NPN HIGH SPEED SWITCHING Search Results

    TRANSISTOR NPN HIGH SPEED SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN HIGH SPEED SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MJE172 Low voltage high speed switching NPN transistor Features • High speed switching ■ NPN device Applications ■ Audio amplifier ■ High speed switching applications  Description SOT-32 This device is an NPN low voltage transistor manufactured using epitaxial planar technology


    Original     		PDF MJE172 OT-32 OT-32 MJE172

    Untitled

    Abstract: No abstract text available
    Text: MJE172 Low voltage high speed switching NPN transistor Features • High speed switching ■ NPN device Applications ■ Audio amplifier ■ High speed switching applications  Description SOT-32 This device is an NPN low voltage transistor manufactured using epitaxial planar technology


    Original     		PDF MJE172 OT-32 OT-32

    mje182

    Abstract: to-126 HIGH SPEED SWITCHING transistor
    Text: MJE182 Low voltage high speed switching NPN transistor Features • High speed switching ■ NPN device Applications ■ Audio amplifier ■ High speed switching applications  Description SOT-32 This device is an NPN low voltage transistor manufactured using epitaxial planar technology


    Original     		PDF MJE182 OT-32 OT-32 MJE182 to-126 HIGH SPEED SWITCHING transistor

    Untitled

    Abstract: No abstract text available
    Text: MJE182 Low voltage high speed switching NPN transistor Features • High speed switching ■ NPN device s ct Applications ■ Audio amplifier ■ High speed switching applications u d o r P e Description This device is an NPN low voltage transistor manufactured using epitaxial planar technology


    Original     		PDF MJE182 OT-32 OT-32

    Untitled

    Abstract: No abstract text available
    Text: MJE172 Low voltage high speed switching NPN transistor Features • High speed switching ■ NPN device s ct Applications ■ Audio amplifier ■ High speed switching applications u d o r P e Description This device is an NPN low voltage transistor manufactured using epitaxial planar technology


    Original     		PDF MJE172 OT-32 OT-32

    NPN Transistor 600V

    Abstract: l13024 NPN Transistor 600V TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD L13024 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC L13024 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching


    Original     		PDF L13024 L13024 L13024L L13024G L13024-TA3-T L13024-TM3-T L13024L-TA3-T L13024L-TM3-T L13024G-TA3-T L13024G-TM3-T NPN Transistor 600V NPN Transistor 600V TO-220

    transistor b1

    Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
    Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage


    Original     		PDF HLB124 HLB124 O-220 HLB124L QW-R203-029 transistor b1 NPN Transistor 600V 1S1000 utchlb124

    NTE2311

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
    Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V


    Original     		PDF NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V

    MJE13009d

    Abstract: 1A 300V TRANSISTOR MJE13009-D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.


    Original     		PDF MJE13009D MJE13009D QW-R203-041 1A 300V TRANSISTOR MJE13009-D

    NPN Transistor 600V TO-220

    Abstract: ULB124G ulb124
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching


    Original     		PDF ULB124 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T O-251 QW-R213-013 NPN Transistor 600V TO-220 ULB124G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching


    Original     		PDF ULB124 ULB124 O-220 ULB124G-xx-TA3-T ULB124G-xx-TM3-T O-251 QW-R213-013

    APT27Z-G1

    Abstract: transistor 13000
    Text: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT27 General Description Features The APT27 series are high voltage, high speed switching NPN power transistor specially designed for offline switch mode power supplies with low output power. • · · High Switching Speed


    Original     		PDF APT27 APT27 APT27Z-G1 transistor 13000

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT27H General Description Features The APT27H series are high voltage, high speed switching NPN power transistor specially designed for off-line switch mode power supplies with low output power. • · · High Switching Speed


    Original     		PDF APT27H APT27H

    TRANSISTOR 13000

    Abstract: 2808 transistor APT13003 13003l 13000 npn transistor NPN Transistor TO92 5V 200mA transistor g1 transistor 2808 transistor 1203
    Text: Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT13003L General Description Features The APT13003L series are high voltage, high speed switching NPN power transistor specially designed for off-line switch mode power supplies with low output power. • · · High Switching Speed


    Original     		PDF APT13003L APT13003L TRANSISTOR 13000 2808 transistor APT13003 13003l 13000 npn transistor NPN Transistor TO92 5V 200mA transistor g1 transistor 2808 transistor 1203

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1  TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications.  FEATURES 1 * High Speed Switching


    Original     		PDF ULB124 O-126 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T ULB124L-xx-T60-K ULB124G-xx-T60-K

    ULB124

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 „ TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES 1 * High Speed Switching


    Original     		PDF ULB124 O-126 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T ULB124L-xx-T60-T ULB124G-xx-T60-T

    NPN Transistor 600V

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 „ TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES 1 * High Speed Switching


    Original     		PDF ULB124 O-126 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T ULB124L-xx-T60-K ULB124G-xx-T60-K NPN Transistor 600V

    NTE2639

    Abstract: 30a 1700v
    Text: NTE2639 Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, High Speed Switch Description: The NTE2639 is a high voltage, high speed switching silicon NPN transistor in a plastgic full–pack envelope designed for use in horizontal deflection circuits of color TV receivers.


    Original     		PDF NTE2639 NTE2639 16kHz 30a 1700v

    NTE2312

    Abstract: 220v 2a transistor
    Text: NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited


    Original     		PDF NTE2312 NTE2312 220v 2a transistor

    NTE51

    Abstract: 75W NPN TO220
    Text: NTE51 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE51 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited


    Original     		PDF NTE51 NTE51 75W NPN TO220

    Untitled

    Abstract: No abstract text available
    Text: NTE2639 Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, High Speed Switch Description: The NTE2639 is a high voltage, high speed switching silicon NPN transistor in a plastic full−pack envelope designed for use in horizontal deflection circuits of color TV receivers.


    Original     		PDF NTE2639 NTE2639 16kHz

    dpak 369C

    Abstract: No abstract text available
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state−of−the−art high speed, high gain


    Original     		PDF MJD18002D2 MJD18002D2/D dpak 369C

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES DESCRIPTION • S-mini package NPN transistor in a plastic SOT323 S-mini package. • High speed switching. APPLICATIONS It is intended for high speed switching applications.


    OCR Scan     		PDF PMST2369 OT323 OT323)

    clap switch

    Abstract: clap switch applications BUL216
    Text: rZ Z SCS-THOMSON ^7 # IHIIiGMilnaafiBiMllcg; BUL216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS


    OCR Scan     		PDF BUL216 BUL216 O-220 clap switch clap switch applications