MMBT3904 jiangsu
Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER
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OT-23
MMBT3906
MMBT3904
MMBT3904 jiangsu
MMBT3906
MMBT3906 SOT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER
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OT-23
MMBT3906
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA
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Marking 2A
Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
Text: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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MMBT3906
OT-23
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA,
100MHz
Marking 2A
2a transistor sot 23
MMBT3906 SOT-23
SOT-23 2A
2A marking MMBT3906
transistor SOT23 2A
MMBT3906
sot-23 2A transistor
2A MARKING SOT23
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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MMBT8050
Abstract: MMBT8050 BR mmbt8050 sot-23
Text: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package
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MMBT8050
OT-23
MMBT8050
MMBT8050 BR
mmbt8050 sot-23
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MARKING 2A
Abstract: MMBT3906 MMBT3904
Text: MMBT3906 Pb RoHS 0.3 Watts PNP Plastic-Encapsulate Transistors COMPLIANCE SOT-23 Features As complementary type, the NPN transistor MMBT3904 is recommended Epitaxial planar die construction Marking: 2A Dimensions in inches and millimeters Maximum Ratings
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MMBT3906
OT-23
MMBT3904
-10uA,
-50mA,
-10mA
100MHz
-10mA
MARKING 2A
MMBT3906
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FSB560
Abstract: FSB560A
Text: FSB560/FSB560A July 1998 FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol
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FSB560/FSB560A
FSB560
FSB560A
OT-23)
FSB560A
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Untitled
Abstract: No abstract text available
Text: BCP1766 2A, 40V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The BCP1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.
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BCP1766
OT-89
BCP1766
BCP1766-P
BCP1766-Q
BCP1766-R
100MHz
23-Jul-2013
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FSB560
Abstract: FSB560A
Text: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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FSB560/FSB560A
FSB560
FSB560A
OT-23)
FSB560A
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SSOT-3
Abstract: CBVK741B019 F63TNR FSB560 FSB560A MMSZ5221B SuperSOTTM -3
Text: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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FSB560/FSB560A
FSB560
FSB560A
OT-23)
SSOT-3
CBVK741B019
F63TNR
FSB560A
MMSZ5221B
SuperSOTTM -3
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smd transistor MARKING 2A
Abstract: No abstract text available
Text: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1
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FMMT619
OT-23
625mw
200mA
100MHz
smd transistor MARKING 2A
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.0118 to92
Abstract: TSB772S TSD882S TSD882SCT TSD882SCY oc sot89
Text: TSD882S Low Vce sat NPN Transistor Pin assignment: TO-92 1. Emitter 2. Collector 3. Base BVCEO = 50V Ic = 3A VCE (SAT), = 0.3V(typ.) @Ic / Ib = 2A / 20mA SOT-89 1. Base 2. Collector 3. Emitter Features Ordering Information Low VCE (SAT). Part No. Excellent DC current gain characteristics
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TSD882S
OT-89
TSD882SCT
TSD882SCY
TSB772S
.0118 to92
TSB772S
TSD882S
TSD882SCT
TSD882SCY
oc sot89
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TRANSISTOR MOTOROLA MAC 223
Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR NPN SOT–23 FEATURES Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value
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OT-23
FMMT449
500mA
100mA
200mA
100MHz
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smd transistor g1
Abstract: g1 smd transistor smd transistor 3K resistor smd 103 D4001BC OPTOCOUPLER SMPS smd transistor S1 SMD resistors 2012 Zener diode 18V SOD80 transistor SMD 104
Text: www.fairchildsemi.com FEB219-001 User’s Guide FPP06R001 Evaluation Board Featured Fairchild Product: FPP06R001 www.fairchildsemi.com/FEBsupport 2008 Fairchild Semiconductor Corporation 1 FEBxxx_ FPP06R001 • Rev. 0.0.1 www.fairchildsemi.com Table of Contents
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FEB219-001
FPP06R001
smd transistor g1
g1 smd transistor
smd transistor 3K
resistor smd 103
D4001BC
OPTOCOUPLER SMPS
smd transistor S1
SMD resistors 2012
Zener diode 18V SOD80
transistor SMD 104
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shottkey diodes
Abstract: No abstract text available
Text: BACK Final Impala Linear Corporation June 1996 ILC6390/1 SOT-89 Step-Up PFM Switcher with Auto-Load Sense General Description Features 50 mA boost converter using Pulse Frequency Modulation, or PFM, technique, in 5-lead SOT-89 or a 5lead SOT-23 package. Only 3 external components
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ILC6390/1
OT-89
OT-23
ILC6390
155kHz;
100kHz
ILC6391CP-30
CD105)
shottkey diodes
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTO R tm July 1998 FMMT560 / FMMT560A B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol
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FMMT560
FMMT560A
OT-23)
FMMT560/FMMT560A
FMMT560
100MHz
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FMMT560
Abstract: FMMT560A MT560 MT560A
Text: Ml C O N D U C T O R tm July 1998 FMMT560 / FMMT560A B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings*
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FMMT560
FMMT560A
OT-23)
MT560/
MT560A
500mA,
FMMT560A
MT560
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FMMT560
Abstract: No abstract text available
Text: SEM ICONDUC TO R t m July 1998 FMMT560 / FMMT560A E B SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Ta^ c^ o«— ^
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FMMT560/FMMT560A
FMMT560
FMMT560A
OT-23)
FMMT560/FMMT560A
500mA,
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FMMT560
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm July 1998 FMMT560 / FMMT560A *• B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute M axim um Ratings*
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FMMT560/FMMT560A
FMMT560
FMMT560A
OT-23)
T560/FM
T560A
500mA,
T560A
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c 2579 power transistor
Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Text: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage
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JEDECTO126
15A3DIN
c 2579 power transistor
TRANSISTOR C 2577
transistor Bc 542
c 2579 transistor
marking EB 202 transistor
transistor bc 564
C 2577 transistor
AE 2576
PM564
Transistors marking WZ
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2646 TRANSISTOR
Abstract: BU908A telefunken 2650 BU908 transistor Bf 908 marking A27 0QCH513 telefunken transistor TRANSISTOR 908 p
Text: TELEFUNKEN ELECTRONIC 17E » • ÔREOORb DDO'îSD'i b • BU 908 TTIiUIiFttiïiKiiK! electronic CrMlrve Tschnotogtes Silicon NPN Power Transistor Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time
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15A3DIN
2646 TRANSISTOR
BU908A
telefunken 2650
BU908
transistor Bf 908
marking A27
0QCH513
telefunken transistor
TRANSISTOR 908 p
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TRANSISTOR BC 157
Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34
Text: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique
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T0126
15A3DIN
TRANSISTOR BC 157
TRANSISTOR BC 158
BY22B
transistor BC 245 c
B13 IC marking code
Transistor SJ 2517
sj 2518
TRANSISTOR as BC 158
SJ 2517
BFX34
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