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    TRANSISTOR NPN 1854 Search Results

    TRANSISTOR NPN 1854 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TRANSISTOR NPN 1854 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3661

    Abstract: ITR05768 ITR05769 ITR05770 ITR05771 ITR05772 MARKING FY VEBO-15V
    Text: Ordering number:ENN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuit. unit:mm 2018B [2SC3661]


    Original     		PDF ENN1854A 2SC3661 2018B 2SC3661] 2SC3661-used VEBO15V) 2SC3661 ITR05768 ITR05769 ITR05770 ITR05771 ITR05772 MARKING FY VEBO-15V

    2SC3661

    Abstract: MARKING FY VEBO-15V N209 Low frequency general-purpose amplifiers,
    Text: Ordering number:EN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuit. unit:mm 2018A [2SC3661]


    Original     		PDF EN1854A 2SC3661 2SC3661] 2SC3661-used VEBO15V) 2SC3661 MARKING FY VEBO-15V N209 Low frequency general-purpose amplifiers,

    MRF846

    Abstract: No abstract text available
    Text: ^emi-Conduatoi ^Product*, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF846 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF846 is Designed for UFH Large-Signal, Common Base Amplifier


    Original     		PDF MRF846 MRF846 040x45' 100mA

    BLW76

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLW76 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW76 is Designed for use in class-AB orclass-B operated high power transmitters in the H.F. and


    Original     		PDF BLW76 BLW76

    Untitled

    Abstract: No abstract text available
    Text: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV21 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYL E


    Original     		PDF BLV21 BLV21 10dBat15W/175MHz S125NOM 3804LFLG 175MHz

    Untitled

    Abstract: No abstract text available
    Text: 10 aunt i, One. 'J.£ii£.u J Cx 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLW83 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW83 is Designed for use in transmitting amplifiers operatimg in


    Original     		PDF BLW83 BLW83 3804LFLG 112X45 125NOM 30MHz

    IC 7408

    Abstract: IC 7812 REGULATOR IC 7812 IC TTL 7400 NEC d446c d446c data sheet IC 7408 ic 74151 IC 74153 REGULATOR IC 7912
    Text: 1 of 8 Home Up Hewlett-Packard Part Number to Industry Standard HP Part Number DESCRIPTION Equivalent Part Number 1810-0076 SIP Resistor Network, 1K8 x 8 no industry number 1810-0307 RESISTOR ARRAY 316-101 100 ohms AB 1816-1104 1K ROM HP1350 Char. Gen. no industry number


    Original     		PDF HP1350 82S126 1818-0373B MK34127N D446C-2 NEC/AMNE592 IC 7408 IC 7812 REGULATOR IC 7812 IC TTL 7400 NEC d446c d446c data sheet IC 7408 ic 74151 IC 74153 REGULATOR IC 7912

    tda8362b

    Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
    Text: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF 1N4003ID 1N4005G 1N4006G 30-Jun-02 30-Jun-01 30-Jun-01 31-Dec-01 tda8362b OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    SDX30D4 Pressure Sensors in 6 pin dip package

    Abstract: 657-A1004SS22P0 785-SS41 HIH-4021 HGDEPM021A HGDESM021A 785-CSLA1CF 653-E2AM18KS08WPB1 A1004BT22P0 SS94A1
    Text: SENSORS Motion & Position Sensors ALPS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1834 BEI Duncan. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1835


    Original     		PDF 9-01-1061A SDX30D4 Pressure Sensors in 6 pin dip package 657-A1004SS22P0 785-SS41 HIH-4021 HGDEPM021A HGDESM021A 785-CSLA1CF 653-E2AM18KS08WPB1 A1004BT22P0 SS94A1

    wabash relay

    Abstract: 1820-3145 1826-0346 Rohm op amp tkf 28 1826-0180 Caddell-Burns Manufacturing e1420 5053HD619K0F GRM3195C1H102JD01D
    Text: Agilent E1420B Component Level Information E1420B Universal Counter Component Level Information Information in this packet applies to the following assemblies: 1. E1420-68006 PC Assembly VXI Assembly 2. 53310-60008 PC Assembly (Input Board) The following is included in this packet:


    Original     		PDF E1420B E1420B E1420-68006 E1420-68006 wabash relay 1820-3145 1826-0346 Rohm op amp tkf 28 1826-0180 Caddell-Burns Manufacturing e1420 5053HD619K0F GRM3195C1H102JD01D

    IS22C011

    Abstract: IS22C011P IS22C011S IS22C011X
    Text: ISSI IS22C011 ISSI IS22C011 8 to 12 SEC INSTANT VOICE ROM ® SEPTEMBER 1997 FEATURES • Voice length at: – 8 KHz sampling is 8 seconds – 6 KHz sampling is 10 seconds – 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections


    Original     		PDF IS22C011 VP001-1I IS22C011 IS22C011P IS22C011S IS22C011X

    IS22C011

    Abstract: IS22C011P IS22C011PI IS22C011S IS22C011SI IS22C011X IS22C011XI
    Text: ISSI IS22C011 ISSI IS22C011 8 to 12 SEC INSTANT VOICE ROM ® OCTOBER 1998 FEATURES • Voice length at: – 8 KHz sampling is 8 seconds – 6 KHz sampling is 10 seconds – 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections


    Original     		PDF IS22C011 VP001-1I IS22C011 IS22C011P IS22C011PI IS22C011S IS22C011SI IS22C011X IS22C011XI

    5V piezo buzzer

    Abstract: transistor npn 1854 IS22C011 IS22C011P IS22C011X
    Text: ISSI ISSI IS22C011 IS22C011 8 to 12 SEC INSTANT VOICE ROM ® SEPTEMBER 1996 FEATURES • Voice length at: – 8 KHz sampling is 8 seconds – 6 KHz sampling is 10 seconds – 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections


    Original     		PDF IS22C011 VP1095C011 5V piezo buzzer transistor npn 1854 IS22C011 IS22C011P IS22C011X

    MRF325

    Abstract: BH rn transistor
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON


    OCR Scan     		PDF MRF325 MRF325 BH rn transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­


    OCR Scan     		PDF b3b72SH 2N6166

    HPG800

    Abstract: 1854a
    Text: Ordering n u m b e r:EN 1854A No.1854A _ 2SC3661 NPN Epitaxial Planar Silicon Transistor High h/pE, Low-Frequency General-Purpose Amp Applications Applications . Low frequency general-purpose amplifiers, drivers, muting circuit Features . Very small-sized package permitting 2SC366l-used sets to be made smaller,


    OCR Scan     		PDF 2SC366l-used HPG800 1854a

    MRF646

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 45 W - 470 MHz CO NTRO LLEDQ RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTO R NPN SILICON . . . designed fo r 12.5 V o lt U H F large-signal a m p lifie r a p p lic a tio n s in in d u s tria l and c o m m e rc ia l F M e q u ip m e n t o p e ra tin g to 5 1 2 M H z.


    OCR Scan     		PDF MRF646 MRF646

    transistor k08

    Abstract: k08 transistor
    Text: O rd e rin g n u m b e r: EN 1 8 5 4 A | 2SC3661 N o .1 8 5 4 A NPN Epitaxial Planar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications Applications . Low frequency general-purpose amplifiers, drivers, muting circuit Features . Very small-sized package permitting 2SC366l-used sets to be made smaller,


    OCR Scan     		PDF 2SC366l-used Co125 200mA 10juA 10fiA 4237AT/N195KI 2SC3661 transistor k08 k08 transistor

    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


    OCR Scan     		PDF ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Untitled

    Abstract: No abstract text available
    Text: ¡SSI IS22C011 8 to 12 SEC INSTANT VOICE ROM SEPTEMBER 1997 FEATURES • Voice length at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10 seconds - 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections • SBT pin play-all or sequential play-all


    OCR Scan     		PDF IS22C011 VP001-1H P001-1H IS22C011X IS22C011 300-mil IS22C011S

    "Voice Playback"

    Abstract: IS22C011 IS22C011S IS22C011X
    Text: IS22C011 8 to 12 SEC INSTANT VOICE ROM SEPTEMBER 1997 FEATURES • Voice length at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10 seconds - 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections • SBT pin play-all or sequential play-all


    OCR Scan     		PDF IS22C011_ IS22C011 VP001-1H IS22C011 IS22C011X 300-mil IS22C011S "Voice Playback"

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp