alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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nec optocoupler
Abstract: igbt display plasma optocouplers 3030 optocoupler 4-pin dip open collector transistor NEC 2500 PS9301 DIP4 gull wing SSOP12 NEC K 2500 PS8551
Text: N E C E l ec t r o n i c s O P TO C O U P L E RS — 2 0 0 8 California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Division of NEC Electronics Corporation CSDD . These include
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transistors984-6720
CL-610B
nec optocoupler
igbt display plasma
optocouplers 3030
optocoupler 4-pin dip open collector
transistor NEC 2500
PS9301
DIP4 gull wing
SSOP12
NEC K 2500
PS8551
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EN60747-5-2
Abstract: PS8821-1 PS8821-2 VDE0884 60664-1 partial discharge
Text: DATA SHEET PHOTOCOUPLER PS8821-1,-2 1 Mbps ANALOG OUTPUT TYPE 8-PIN SSOP SO-8 HIGH-SPEED PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8821-1, -2 are optically coupled isolators containing a GaAlAs LED on the light emitting diode (input side) and a PIN photodiode and a high-speed amplifier transistor on the output side on one chip.
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PS8821-1
PS8821-1,
PS8821-2
PS8821-1
EN60747-5-2
VDE0884
60664-1 partial discharge
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8821
Abstract: PS8821-2-AX EN60747-5-2 PS8821-1 PS8821-2 VDE0884 NL831
Text: PHOTOCOUPLER PS8821-1,-2 1 Mbps ANALOG OUTPUT TYPE 8-PIN SSOP SO-8 HIGH-SPEED PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8821-1, -2 are optically coupled isolators containing a GaAlAs LED on the light emitting diode (input side) and a PIN photodiode and a high-speed amplifier transistor on the output side on one chip.
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PS8821-1
PS8821-1,
PS8821-2
PS8821-1
8821
PS8821-2-AX
EN60747-5-2
VDE0884
NL831
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88212 nec
Abstract: 88212 8821 EN60747-5-2 PS8821-1 PS8821-2 VDE0884 60664-1 partial discharge PS8821 PS8821-2-AX
Text: DATA SHEET PHOTOCOUPLER PS8821-1,-2 1 Mbps ANALOG OUTPUT TYPE 8-PIN SSOP SO-8 HIGH-SPEED PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8821-1, -2 are optically coupled isolators containing a GaAlAs LED on the light emitting diode (input side) and a PIN photodiode and a high-speed amplifier transistor on the output side on one chip.
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PS8821-1
PS8821-1,
PS8821-2
PS8821-1
88212 nec
88212
8821
EN60747-5-2
VDE0884
60664-1 partial discharge
PS8821
PS8821-2-AX
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EN60747-5-2
Abstract: PS8821-1 PS8821-2 VDE0884 PS88211F
Text: PHOTOCOUPLER PS8821-1,-2 1 Mbps ANALOG OUTPUT TYPE 8-PIN SSOP SO-8 HIGH-SPEED PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8821-1, -2 are optically coupled isolators containing a GaAlAs LED on the light emitting diode (input side) and a PIN photodiode and a high-speed amplifier transistor on the output side on one chip.
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PS8821-1
PS8821-1,
PS8821-2
PS8821-1
EN60747-5-2
VDE0884
PS88211F
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLER PS8821-1,-2 1 Mbps ANALOG OUTPUT TYPE 8-PIN SSOP SO-8 HIGH-SPEED PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8821-1, -2 are optically coupled isolators containing a GaAlAs LED on the light emitting diode (input side) and a PIN photodiode and a high-speed amplifier transistor on the output side on one chip.
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PS8821-1
PS8821-1,
PS8821-2
PS8821-1
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PS8821-1-AX
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLER PS8821-1,-2 1 Mbps ANALOG OUTPUT TYPE 8-PIN SSOP SO-8 HIGH-SPEED PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS8821-1, -2 are optically coupled isolators containing a GaAlAs LED on the light emitting diode (input side) and a PIN photodiode and a high-speed amplifier transistor on the output side on one chip.
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PS8821-1
PS8821-1,
PS8821-2
PS8821-1-F3,
PS8821-2-F3,
PS8821-1-AX
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EN60747-5-2
Abstract: PS8821-1 PS8821-2 VDE0884
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
2SC4570-T1
NEC JAPAN 282 110 01
NEC 2561
TYP 513 309
2SC4570-T1
2SC4570-T2
date sheet ic 7483
marking 929 922
nec 5261
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TD-2411
Abstract: NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters PART NUMBER QUANTITY 2SC5011-T1 3 Kpcs/Reel.
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2SC5011
2SC5011-T1
2SC5011-T2
TD-2411
NEC 3552
2SC5011
2SC5011-T1
2SC5011-T2
702 mini transistor
P1039
1357 transistor NEC
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nec 2412
Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1
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2SC5012
2SC5012-T1
2SC5012-T2
nec 2412
transistor NEC 882 p
2412 NEC
2SC5012-T1
2SC5012
2SC5012-T2
NEC 2403 106
NEC 2403 545
TD-2412
nec 2702
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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transistor nec D587
Abstract: nec d587 D508 transistor equivalent transistor d241 transistor d478 nec d388 transistor D413 transistor marking D22 6pin report on colpitts oscillator D665
Text: User’s Manual Usage of PPC8102T, PPC8103T, PPC8108T 1-V Power Supply High-Frequency Amplifier/Mixer+Oscillator ICs Document No. P12718EJ1V0UM00 1st edition Date Published October 1997 N Printed in Japan 1997 [MEMO] 2 The information in this document will be updated without notice.
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PPC8102T,
PPC8103T,
PPC8108T
P12718EJ1V0UM00
transistor nec D587
nec d587
D508 transistor
equivalent transistor d241
transistor d478
nec d388 transistor
D413 transistor
marking D22 6pin
report on colpitts oscillator
D665
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation
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2SC5011
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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transistor NEC D 882 p
Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain
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2SC5011
2SC5011-T1
transistor NEC D 882 p
393AN
transistor 2sc 3203
nec d 1590
2sc 1329
transistor NEC b 882
nec a 634
e50p
NEC D 822 P
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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transistor NEC D 882 p
Abstract: nec d 882 p nec d 882 p transistor transistor nec d 882 p transistor transistor nec d 882 NEC 882 p 2SK19 transistor NEC 882 p c 879 transistor transistor+2sk
Text: MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS Th e 2SK1954 is N-channel M O S Field Effect Transistor designed for high voltage sw itching applications. tin millimeters
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2SK1954,
2SK1954-Z
2SK1954
2SK1954
IEI-1209>
transistor NEC D 882 p
nec d 882 p
nec d 882 p transistor transistor
nec d 882 p transistor
transistor nec d 882
NEC 882 p
2SK19
transistor NEC 882 p
c 879 transistor
transistor+2sk
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21134 015
Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
21134 015
nec K 3570
T 318 TE 2395
marking v67
of ic ST 4051
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
4570-T
PACK878
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CT 1975 sam
Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the
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2SC4570
2SC4570-T1
CT 1975 sam
transistor NEC D 588
NEC 2561 LE 401
zo 607 p 408
NEC 2561 de
nec 2561 Q 634
date sheet ic 7483
C4570
CT 1975 - sam
T72 marking
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