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    TRANSISTOR MOSFET 803 Search Results

    TRANSISTOR MOSFET 803 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MOSFET 803 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCH6935

    Abstract: No abstract text available
    Text: MCH6935 Ordering number : ENN8039 MCH6935 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6935 ENN8039 MCH6935

    pdf datasheet of ic 8038

    Abstract: ic 8038 ic 8038 APPLICATIONS MCH6933
    Text: MCH6933 Ordering number : ENN8038 MCH6933 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6933 ENN8038 pdf datasheet of ic 8038 ic 8038 ic 8038 APPLICATIONS MCH6933

    MCH6931

    Abstract: No abstract text available
    Text: MCH6931 Ordering number : ENN8037 MCH6931 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6931 ENN8037 MCH6931

    EN803

    Abstract: EN8039A MCH6935
    Text: MCH6935 Ordering number : EN8039A SANYO Semiconductors DATA SHEET MCH6935 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6935 EN8039A EN803 EN8039A MCH6935

    81A7031-50-5F

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF A2T07D160W04S A2T07D160W04SR3 81A7031-50-5F

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


    Original     		PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


    Original     		PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 2, 2/2014 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S7170N MRF8S7170NR3 2/2014Semiconductor,

    J50 mosfet

    Abstract: No abstract text available
    Text: DU2810S RF Power MOSFET Transistor 10W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF DU2810S 2-175MHz, J50 mosfet

    J50 mosfet

    Abstract: GM-160 DU2810S 564 transistor
    Text: DU2810S RF Power MOSFET Transistor 10W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF DU2810S 2-175MHz, J50 mosfet GM-160 DU2810S 564 transistor

    LF2810A

    Abstract: lf2810
    Text: LF2810A RF Power MOSFET Transistor 10W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF LF2810A 500-1000MHz, LF2810A lf2810

    Untitled

    Abstract: No abstract text available
    Text: 19-1302; Rev 3; 7/02 Low-Noise, Low-Dropout, 150mA Linear Regulators in SOT23 _Features ♦ Low Output Noise: 30µVRMS Designed with an internal P-channel MOSFET pass transistor, the MAX8867/MAX8868 maintain a low 100µA supply current, independent of the load current and


    Original     		PDF 150mA MAX8867/MAX8868 MAX8868 MAX8867/MAX8868

    Untitled

    Abstract: No abstract text available
    Text: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.


    Original     		PDF

    NEC 10F triac

    Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
    Text: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117


    Original     		PDF TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP115 TLP115A TLP116 NEC 10F triac TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin

    p421 coupler

    Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
    Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety


    Original     		PDF TLP227GA TLP227G TLP227GA TLP227G/TLP597GA/TLP227GA-2 p421 coupler MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note

    12V to 300V dc dc converter step-up

    Abstract: BL3208 BL35P12 12v 10A dc driver motor control mosfet 400V to 6V DC Regulator TO 220 Package BL0306 DC DC converter 1A 400V TO 220 Package cm8001 BL3207 BL8530
    Text: Products Selection Guide www.belling.com.cn Index of Part Number 型号索引 Control & Driver 驱动控制类 Counter, CD/DVD, Relay, Stepped motor, Brushless motor, etc（机电驱动） LCD display driver（液晶显示驱动） Digital Appliances 数字家电类


    Original     		PDF TPA6211 BL6203 TPA6203 BL6204 TPA6204 BL6212 LM4990 BL6217 HDIP18 TDA1517 12V to 300V dc dc converter step-up BL3208 BL35P12 12v 10A dc driver motor control mosfet 400V to 6V DC Regulator TO 220 Package BL0306 DC DC converter 1A 400V TO 220 Package cm8001 BL3207 BL8530

    MAX1864

    Abstract: MAX1864TEEE MAX1864UEEE MAX1865 MAX1865TEEP MAX1865UEEP mosfet b4
    Text: KIT ATION EVALU E L B AVAILA 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE ,


    Original     		PDF MAX1864/MAX1865 MAX1864 MAX1865 blo-543-7100 MAX1864/MAX1865 MAX1864TEEE MAX1864UEEE MAX1865TEEP MAX1865UEEP mosfet b4

    MAX1864

    Abstract: MAX1864TEEE MAX1864UEEE MAX1865 MAX1865TEEP MAX1865UEEP 15DL20
    Text: 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies Features The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE , xDSL CPE, and set-top boxes. Operating off a low-cost,


    Original     		PDF MAX1864/MAX1865 MAX1864 MAX1865 MAX1864/MAX1865 MAX1864TEEE MAX1864UEEE MAX1865TEEP MAX1865UEEP 15DL20

    2W3905

    Abstract: No abstract text available
    Text: KIT ATION EVALU E L B AVAILA 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE ,


    Original     		PDF MAX1864/MAX1865 MAX1864 MAX1865 blo6-543-7100 MAX1864/MAX1865 2W3905

    Untitled

    Abstract: No abstract text available
    Text: 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies Features The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE , xDSL CPE, and set-top boxes. Operating off a low-cost,


    Original     		PDF MAX1864/MAX1865 MAX1864 MAX1865 MAX1864/MAX1865

    Untitled

    Abstract: No abstract text available
    Text: 19-2084; Rev 0; 7/01 Tracking/Sequencing Triple/Quintuple Power-Supply Controllers The MAX1964/MAX1965 power-supply controllers are designed to address cost-sensitive applications demanding voltage sequencing/tracking, such as cable modem consumer premise equipment CPE ,


    Original     		PDF MAX1964/MAX1965 MAX1964 MAX1965 MAX1964/MAX1965

    Q844

    Abstract: MAX858ESA
    Text: y v i> ix i> k i 3 .3 V /5 V or Adjustable-O utput, Step-Up DC-DC C onverters The MAX856-MAX859 combine ultra-low quiescent supply current and high efficiency to give maximum battery life. An internal MOSFET power transistor permits high switch­ ing frequencies. This benefit, combined with internally set


    OCR Scan     		PDF MAX856-MAX859 MAX856/MAX858 MAX857/MAX859 MAX858CSA MAX858CUA MAX858C/D MAX858ESA MAX858MJA MAX859CSA Q844

    2SK2412

    Abstract: 3R-90 TC-8031 2sk2412k
    Text: J_ I C • E * 1K N MOSïï^l^ejÏJ^MOS FET MOS Field Effect Transistor ^ 2 S K 2 4 1 2 -V ¿¡WU/\0|7 -MOSFET 'f y 3- X C? Æ I > I l f f l 2 S K 2 4 1 2 liN 5 :- ^ t O H É a / \ “ 7 - M 0 S F E T T ', X < y •^■•fe : m m 10.0 m + 0.3 4.5 ± 0.2


    OCR Scan     		PDF 2SK2412 2SK2412 MP-45F O-220) 3R-90 TC-8031 2sk2412k