Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR MJE13005D Search Results

    TRANSISTOR MJE13005D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MJE13005D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    mje13005d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		MJE13005D MJE13005D QW-R502-379 PDF

    UTC 379

    Abstract: mje13005d transistor MJE13005D ELECTRONIC BALLAST transistor DIAGRAM MJE13005DL-T60-T to-126 npn switching transistor 400v NPN 2A TO 126 MJE13005-D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		MJE13005D MJE13005D QW-R502-379 UTC 379 transistor MJE13005D ELECTRONIC BALLAST transistor DIAGRAM MJE13005DL-T60-T to-126 npn switching transistor 400v NPN 2A TO 126 MJE13005-D PDF

    mje13005d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		MJE13005D MJE13005D QW-R502-379. PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		MJE13005D MJE13005D QW-R502-379 PDF

    MJE13005D

    Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		MJE13005D MJE13005D QW-R502-379. HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR transistor MJE13005D PDF

    to-126 HIGH SPEED SWITCHING transistor

    Abstract: mje13005d free transistor high power NPN 2A TO 126
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		MJE13005D MJE13005D QW-R203-040 to-126 HIGH SPEED SWITCHING transistor free transistor high power NPN 2A TO 126 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		MJE13005D-K MJE13005D-K QW-R213-021 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  TO-220 TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,


    Original     		MJE13005D O-220 O-220F MJE13005D O-251 QW-R502-379 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. 2010. 10. 11 Revision No : 2 1/3


    Original     		MJE13005DF PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. ・Built-in Free wheeling Diode makes efficient anti saturation operation. ・Suitable for half bridge light ballast Applications. ・Low base drive requirement.


    Original     		MJE13005DF PDF

    mje13005df

    Abstract: IC free
    Text: SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A ・Built-in Free wheeling Diode makes efficient anti saturation operation. C P ・Low base drive requirement. B E SYMBOL RATING UNIT


    Original     		MJE13005DF mje13005df IC free PDF

    mje13005d equivalent

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. A O C Suitable for half bridge light ballast Applications. F Low base drive requirement.


    Original     		MJE13005D mje13005d equivalent PDF

    mje13005d equivalent

    Abstract: IC free MJE13005D IC free transistor hFE-100 low power
    Text: SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. A O C Suitable for half bridge light ballast Applications. F Low base drive requirement.


    Original     		MJE13005D 05RRENT mje13005d equivalent IC free MJE13005D IC free transistor hFE-100 low power PDF

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 PDF