2n5109
Abstract: transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
Text: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER
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2N5109
CP214
2N5109
transistor 2N5109
2n5109 transistor
transistor marking code AL
VCE-15V
NPN transistor marking NY
chip die npn transistor
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Q62702-F1271
Abstract: No abstract text available
Text: BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-143
Q62702-F1271
Dec-11-1996
Q62702-F1271
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TRANSISTOR S1d
Abstract: Q62702-A1243 SCT-595
Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 42M s1D Q62702-A1243 Package
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VPW05980
Q62702-A1243
SCT-595
Jun-18-1997
EHP00842
EHP00843
TRANSISTOR S1d
Q62702-A1243
SCT-595
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BFP 181R
Abstract: IC 7449 Q62702-F1685 SIEMENS marking
Text: BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-143R
Q62702-F1685
Jan-21-1997
BFP 181R
IC 7449
Q62702-F1685
SIEMENS marking
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smd marking 58a
Abstract: 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A
Text: SPI80N10L SPP80N10L SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS Package Ordering Code Marking SPP80N10L PG-TO220-3-1 Q67042-S4173 80N10L
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SPI80N10L
SPP80N10L
PG-TO262-3-1
PG-TO220-3-1
Q67042-S4173
80N10L
smd marking 58a
80N10L
INFINEON PART MARKING
to220 pcb footprint
SPI80N10L
SPP80N10L
80N10
SMD marking code 58A
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C2592
Abstract: Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 marking code AES
Text: BCP 51M . BCP 53M PNP Silicon AF Transistor 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 54M.BCP 56M NPN 2 1 VPW05980 Type Marking Ordering Code Pin Configuration
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VPW05980
Q62702-C2592
Q62702-C2593
Q62702-C2594
SCT-595
EHP00262
EHP00260
EHP00263
EHP00264
C2592
Q62702-C2593
Q62702-C2594
SCT-595
marking code AES
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47N10
Abstract: SPB47N10 SPI47N10 SPP47N10 V550-12 Q67060-S7431
Text: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS P-TO262-3-1 Package Ordering Code Marking SPP47N10 P-TO220-3-1
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SPI47N10
SPP47N10
SPB47N10
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
SPP47N10
Q67040-S4183
47N10
47N10
SPB47N10
SPI47N10
V550-12
Q67060-S7431
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Q62702-F979
Abstract: BF599
Text: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter
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Q62702-F979
OT-23
Iy21e
Q62702-F979
BF599
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11n10
Abstract: P-TO252 SPD11N10 SPU11N10
Text: SPD11N10 SPU11N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 100 RDS on 170 m ID 10.5 A P-TO251 Type Package Ordering Code Marking
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SPD11N10
SPU11N10
P-TO251
P-TO252
Q67042-S4121
11N10
11n10
P-TO252
SPD11N10
SPU11N10
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BSS138W
Abstract: D028 E6327 D003 SOT sws sot-323
Text: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated SOT-323 Type Package Ordering Code Tape and Reel Information Marking BSS138W SOT-323
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BSS138W
OT-323
Q67042-S4187
E6327:
Q67042-S4191
E6433:
BSS138W
D028
E6327
D003 SOT
sws sot-323
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SOT23 marking skS
Abstract: SKs SOT23 q67042-s4184 dd1270 BSS138N D023 D26 SOT23 marking code SKs marking SKs sot-23
Text: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23
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BSS138N
OT-23
BSS138N
OT-23
Q67042-S4184
Q67042-S4190
E6327:
E6433:
SOT23 marking skS
SKs SOT23
dd1270
D023
D26 SOT23
marking code SKs
marking SKs sot-23
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SOT23 marking skS
Abstract: Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs
Text: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23
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BSS138N
OT-23
Q67042-S4184
E6327:
Q67042-S4190
E6433:
SOT23 marking skS
Q67042-S4184
diode sot-23 marking AG
SKs SOT23
D023
BSS138N
SKs 83
SKs TRANSISTOR
E6327
marking code SKs
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1721E50R
Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking
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LAE4001R
LAE4002S
LBE2003S
LBE2009S
LCE2009S
LEE1015T
LTE21009R
LTE21015R
LTE21025R
LTE42005S
1721E50R
Marking Codes
Philips MARKING CODE
2327E40R
marking codes transistors
transistor 502
r8 marking
marking Code philips
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sot-23 Marking LG
Abstract: No abstract text available
Text: Central" CMPTA44 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z
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CMPTA44
OT-23
CP310
26-September
OT-23
sot-23 Marking LG
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 777 NPN Silicon RF Transistor Preliminary Data • For UHF/VHF frequency converters and local oscillators. • /T = 2.2 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BF 777
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Q62702-F1426
OT-23
fl23Sb05
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon RF Transistor BFQ 76 • For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. • Complementary type: BFQ 71 NPN . ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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Q62702-F804
ft235bD5
BFQ76
fl235bQ5
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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BFP181R
900MHz
Q62702-F1685
OT-143R
235fc
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M
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BCP53M
Q62702-C2592
Q62702-C2593
Q62702-C2594
SCT-595
6E35bOS
02BShD5
B35b05
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TRANSISTOR S1d
Abstract: AX 1101
Text: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type
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Q62702-A1243
SCT-595
EHP00844
TRANSISTOR S1d
AX 1101
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marking GG
Abstract: marking code 604 SOT23
Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package
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OT-23
marking GG
marking code 604 SOT23
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ac 0624 transistor 17-33
Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
Text: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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F1217
OT-143
ac 0624 transistor 17-33
uc 1604
0166 415 04 1 060
transistor cq 529
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 521 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=1 kil, R2=1 kfl FL BCR 521 XVs Pin Configuration Q62702-C2355 1 =B Package o II CO Marking Ordering Code LU II <\J
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Q62702-C2355
OT-23
a235bOS
BS35bOS
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings
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Q62702-F979
OT-23
EHT07072
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transistor BF 199
Abstract: BF 199 bf199 transistor A11A
Text: SIEM ENS BF 199 NPN Silicon RF Transistor • For common emitter IF TV amplifier stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 199 - Q62702-F355 Pin Configuration 1 2 3 C E Package1 TO-92 B Maximum Ratings Parameter
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Q62702-F355
D0bb74b
23SbGS
DDbb747
00bb74fl
transistor BF 199
BF 199
bf199
transistor A11A
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