KTD1624
Abstract: mark A sot-89 MARK Y B Y device marking SOT89 transistor marking transistor marking c
Text: SEMICONDUCTOR KTD1624 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark Y KTD1624 * Grade A A,B,C Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only
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KTD1624
OT-89
KTD1624
mark A sot-89
MARK Y
B Y device marking
SOT89 transistor marking
transistor marking c
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mark A sot-89
Abstract: KTD1003
Text: SEMICONDUCTOR KTD1003 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark L KTD1003 * Grade A A,B,C Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only
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KTD1003
OT-89
mark A sot-89
KTD1003
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SOT89 transistor marking
Abstract: sot-89 transistor marking c marking sot89 KTC4373 SOT89 Package C 4834 transistor sot-89 marking marking 00 SOT 89 Marking transistor
Text: SEMICONDUCTOR KTC4373 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark C KTC4373 * Grade O O,Y Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only
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KTC4373
OT-89
SOT89 transistor marking
sot-89
transistor marking c
marking sot89
KTC4373
SOT89 Package
C 4834 transistor
sot-89 marking
marking 00 SOT 89
Marking transistor
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mark A sot-89
Abstract: KTB1124 transistor marking c
Text: SEMICONDUCTOR KTB1124 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark X KTB1124 * Grade A A,B,C Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only
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KTB1124
OT-89
mark A sot-89
KTB1124
transistor marking c
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mark A sot-89
Abstract: KTC4377
Text: SEMICONDUCTOR KTC4377 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark S KTC4377 * Grade A A,B,C,D Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only
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KTC4377
OT-89
mark A sot-89
KTC4377
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M8050
Abstract: No abstract text available
Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11
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M8050
200mW
OT-23
M8050-L
800mA,
30MHz
800mA
M8050
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M8050
Abstract: m8050 NPN equivalent M8050 equivalent
Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11
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M8050
200mW
OT-23
M8050-L
M8050ation
800mA,
30MHz
25-Nov-2010
M8050
m8050 NPN equivalent
M8050 equivalent
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1AM MMBT3904
Abstract: transistors 1am transistor 1am
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Code
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OT-23
MMBT3904
MMBT3906
OT-23
1AM MMBT3904
transistors 1am
transistor 1am
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Untitled
Abstract: No abstract text available
Text: FCX593 SOT89 Silicon planar high voltage transistor Complementary part number - FMMT493 C Device marking - P93 B E E C C B Pinout - top view Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO
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FCX593
FMMT493
D-81541
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SOT89 52 10A
Abstract: Marking P93 sot89 FCX593 FMMT493 TS16949
Text: FCX593 SOT89 Silicon planar high voltage transistor Complementary part number - FMMT493 C Device marking - P93 B E E C C B Pinout - top view Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO
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FCX593
FMMT493
D-81541
SOT89 52 10A
Marking P93 sot89
FCX593
FMMT493
TS16949
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transistor smd marking BA RE
Abstract: fr51 FR MARKING SMD TRANSISTOR transistor smd marking BA CMBT2484 ba sot23
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
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ISO/TS16949
CMBT2484
C-120
transistor smd marking BA RE
fr51
FR MARKING SMD TRANSISTOR
transistor smd marking BA
CMBT2484
ba sot23
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STS9013
Abstract: STS9012
Text: STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose application. C • Switching application. B Features C B E • Excellent hFE linearity. • Complementary pair with STS9012 E TO-92 Ordering Information Type NO. STS9013 Marking
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STS9013
STS9012
KSD-T0A047-000
STS9013
STS9012
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transistor smd marking BA RE
Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
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CMBT2484
C-120
transistor smd marking BA RE
transistor smd marking PE
FR MARKING SMD TRANSISTOR
CMBT2484
transistor smd marking BA sot-23
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ts 4141 TRANSISTOR smd
Abstract: CMBT2484
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
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CMBT2484
C-120
ts 4141 TRANSISTOR smd
CMBT2484
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SBC-558
Abstract: SBC548 SBC558
Text: SBC548 NPN Silicon Transistor Descriptions PIN Connection • General purpose application C • Switching application B Features B C • High voltage : VCEO=30V • Complementary pair with SBC558 E E TO-92 Ordering Information Type NO. Marking SBC548 Package Code
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SBC548
SBC558
KSD-T0A043-000
SBC-558
SBC548
SBC558
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SBC547
Abstract: SBC557 2SBC547
Text: SBC547 NPN Silicon Transistor Descriptions PIN Connection • General purpose application C • Switching application B Features B C • High voltage : VCEO=45V • Complementary pair with SBC557 E E TO-92 Ordering Information Type NO. Marking SBC547 Package Code
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SBC547
SBC557
KSD-T0A042-000
SBC547
SBC557
2SBC547
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SOT89 52 10A
Abstract: FCX495 TS16949 marking N95
Text: FCX495 SOT89 NPN silicon planar high voltage transistor Features • 150 Volt VCEO • 1 Amp continuous current E C C Device marking B N95 Pinout - top view Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
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FCX495
D-81541
SOT89 52 10A
FCX495
TS16949
marking N95
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SBC546
Abstract: SBC556
Text: SBC546 NPN Silicon Transistor Descriptions PIN Connection • General purpose application C • Switching application B Features B C • High voltage : VCEO=55V • Complementary pair with SBC556 E E TO-92 Ordering Information Type NO. Marking SBC546 SBC546
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SBC546
SBC556
KSD-T0A041-000
SBC546
SBC556
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STD1862
Abstract: TRANSISTOR stb1277 STB1277 std1862 TRANSISTOR
Text: STD1862 NPN Silicon Transistor Descriptions PIN Connection • Audio power amplifier C • High current application E B B C Features E • High current : IC=2A • Complementary pair with STB1277 TO-92 Ordering Information Type NO. Marking STD1862 STD1862
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STD1862
STB1277
KSD-T0A023-001
STD1862
TRANSISTOR stb1277
STB1277
std1862 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Transistors SST6839 I PNP General Purpose Transistor SST6839 •Features 1 B V c£c < — 40V lc = — 1mA) 2 ) Com plem ents the SST6838. •External dimensions (Units : mm) •Package, marking« and packaging specifications Type S ST 6S39 Package Marking
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OCR Scan
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SST6839
SST6838.
SPEC-A32)
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BC648B
Abstract: No abstract text available
Text: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking
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BC847B
BC857B.
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
BC648B
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MARKING 1F
Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y MARKING 1G TRANSISTOR
Text: SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C SC 2712Y=1E C S C 2712G R G =1F CSC 2712BL(L)=1G _3.0_ 2.8 0.14 0.09 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6 2.4 _l.02_
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CSC2712
CSC2712Y
CSC2712GR
CSC2712BL
MARKING 1F
CSC2712
MARKING 1G TRANSISTOR
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supersot 6 TE
Abstract: Supersot 6
Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor
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FMB1020
300mA.
100uA
100mA
150mA
100MHz
100uA,
200mA,
supersot 6 TE
Supersot 6
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sot-23 MARKING CODE ZA
Abstract: sot-23 CODE 41 bfs17p mc
Text: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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BFS17P
OT-23
sot-23 MARKING CODE ZA
sot-23 CODE 41
bfs17p mc
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