SMD Transistor 1f
Abstract: MARKING 1F transistor marking 1f CMBT5550
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBT5550
C-120
SMD Transistor 1f
MARKING 1F
transistor marking 1f
CMBT5550
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transistor marking 1f
Abstract: CMBT5550
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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PDF
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OT-23
CMBT5550
C-120
transistor marking 1f
CMBT5550
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smd transistor marking BL
Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE
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OT-23
CSC2712
CSC2712Y
CSC2712GR
CSC2712BL
C-120
smd transistor marking BL
smd transistor marking 1E
smd transistor .1G
CSC2712
ts 4141 TRANSISTOR smd
transistor 1f sot-23
marking 1F SOT-23
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equivalent transistor smd 3 em 7
Abstract: CMBT5550 ts 4141 TRANSISTOR
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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PDF
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OT-23
CMBT5550
C-120
equivalent transistor smd 3 em 7
CMBT5550
ts 4141 TRANSISTOR
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ts 4141 TRANSISTOR smd
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE
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CSC2712
OT-23
CSC2712Y
CSC2712GR
CSC2712BL
C-120
ts 4141 TRANSISTOR smd
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smd transistor marking BL
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSC2712Y=1E CSC2712GR G =1F
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PDF
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OT-23
CSC2712
CSC2712Y
CSC2712GR
CSC2712BL
C-120
smd transistor marking BL
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking
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OT-23
CMBT5550
C-120
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Untitled
Abstract: No abstract text available
Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage • Low collector-emitter saturation voltage 4 3 5 • Two galvanic internal isolated NPN/PNP 2 6 1 Transistor in one package Tape loading orientation Top View 6 5 4 Marking on SC74 package
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SMBTA06UPN
EHA07177
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bc847at
Abstract: No abstract text available
Text: BC847AT/BT/CT SOT-523 Transistor NPN SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC847AT=1E; BC847BT=1F; BC847CT=1G Dimensions in inches and (millimeters)
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BC847AT/BT/CT
OT-523
OT-523
BC847AT
BC847BT
BC847CT
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5550
C-120
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h11E
Abstract: No abstract text available
Text: BC847BT NPN Silicon AF Transistor 3 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage 2 • Low noise between 30 Hz and 15 kHz 1 • Complementary type: BC857BT Type Marking BC847BT 1Fs Pin Configuration
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BC847BT
BC857BT
VPS05996
h11E
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SMBT2222A SOT23
Abstract: of ic 2907
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F
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SMBT2907A/MMBT2907A
SMBT2222A
MMBT2222A
SMBT2907A/MMBT2907A
SMBT2222A SOT23
of ic 2907
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h11E
Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P
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SMBT2222A/MMBT2222A
SMBT2907A
MMBT2907A
SMBT2222A/MMBT2222A
h11E
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bc817
Abstract: No abstract text available
Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration
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BC817.
BC818.
BC807.
BC808.
BC817-16
BC817-25
BC817-25W
OT323
BC817-40
BC817-40W
bc817
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6CS transistor
Abstract: transistor 6cs
Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration
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BC817.
BC818.
BC807.
BC808.
BC817-16
BC817-25
BC817-25W
BC817-40
BC817-40W
BC818-16W
6CS transistor
transistor 6cs
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transistor 6cs
Abstract: 6CS transistor 6as sot23 marking 6CS BC808 BC817 6bs transistor BC817-25 BC817-25W BC817K-16
Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration
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BC817.
BC818.
BC807.
BC808.
BC817-16
BC817K-16*
BC817-25
BC817K-25*
BC817-25W
OT323
transistor 6cs
6CS transistor
6as sot23
marking 6CS
BC808
BC817
6bs transistor
BC817-25
BC817-25W
BC817K-16
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Untitled
Abstract: No abstract text available
Text: BC847BL3, BC848BL3 NPN Silicon AF Transistor • For AF input stage and driver applications • High current gain 3 • Low collector-emitter saturation voltage 1 2 • Complementary types: BC857BL3, BC858BL3 PNP Type Marking Pin Configuration Package BC847BL3
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BC847BL3,
BC848BL3
BC857BL3,
BC858BL3
BC847BL3
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Untitled
Abstract: No abstract text available
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration
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SMBT2907A/MMBT2907A
SMBT2222A/
MMBT2222A
VPS05161
SMBT2907A/MMBT2907A
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5Cs transistor
Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
Text: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16
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BC807.
BC808.
BC817.
BC818.
BC807-16
BC807-16W
BC807-25
BC807-25W
BC807-40
BC807-40W
5Cs transistor
5BS transistor
marking 5bs
5as package
package marking 5as
transistor 5bs
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Untitled
Abstract: No abstract text available
Text: BF517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners 2 3 • Pb-free RoHS compliant package 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF517 Marking LRs Pin Configuration 1=B
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BF517
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Untitled
Abstract: No abstract text available
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration
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SMBT2907A/MMBT2907A
SMBT2222A/
MMBT2222A
VPS05161
SMBT2907A/MMBT2907A
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MARKING 1F
Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y MARKING 1G TRANSISTOR
Text: SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C SC 2712Y=1E C S C 2712G R G =1F CSC 2712BL(L)=1G _3.0_ 2.8 0.14 0.09 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6 2.4 _l.02_
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OCR Scan
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PDF
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CSC2712
CSC2712Y
CSC2712GR
CSC2712BL
MARKING 1F
CSC2712
MARKING 1G TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN m m CSC2712Y*1E CSC2712GR G =*1F CSC2712BL(L)=1 G 3.0_ 2.8 “ Û.09 o3a Pin configuration 1 » BASE 2 = EM ITTER 3 = COLLECTOR 0.14 o.4a L
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OCR Scan
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PDF
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CSC2712
CSC2712Y
CSC2712GR
CSC2712BL
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transistor bc 499
Abstract: 1CS K2 marking 1cs transistor Bc 580
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code
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OCR Scan
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PDF
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Q62702-C2372
OT-363
BC847S
transistor bc 499
1CS K2
marking 1cs
transistor Bc 580
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