DIP18
Abstract: LB1741 mm 105k BUT 11 Transistor
Text: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.
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ENN4094
LB1741
LB1741
500mA
18-pin
3007B-DIP18
LB1741]
51min
DIP18
mm 105k
BUT 11 Transistor
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TS16949
Abstract: ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC
Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it
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ZXTP2041F
-500mV
ZXTN2040F
ZXTP2041FTA
ZXTP2041FTC
D-81541
TX75248,
TS16949
ZXTN2040F
ZXTP2041F
ZXTP2041FTA
ZXTP2041FTC
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transistor TT 2146
Abstract: AT-32032 AT-32032-BLK 32032
Text: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery
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AT-32032
AT-32032
OT323
SC-70)
OT-323
5965-6216E
5989-2644EN
transistor TT 2146
AT-32032-BLK
32032
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TS16949
Abstract: ZX5T955Z
Text: ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC
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ZX5T955Z.
-140V
ZX5T955TA
D-81541
TS16949
ZX5T955Z
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"PNP Transistor"
Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
Text: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZX5T951Z
"PNP Transistor"
design ideas
TS16949
ZX5T951Z
ZX5T951ZTA
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2SC4272
Abstract: EN2970
Text: Ordering number:EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 2.5 1.0
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EN2970
2SC4272
27MHz
2SC4272]
25max
2SC4272
EN2970
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2SA1864
Abstract: 47192
Text: Ordering number:EN4719 PNP Epitaxial Planar Silicon Transistor 2SA1864 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=4.7kΩ, R2=4.7kΩ . · Very small-sized package making 2SA1864-applied sets small and slim.
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EN4719
2SA1864
2SA1864-applied
2SA1864]
2SA1864
47192
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"marking ca"
Abstract: 2SA1866 ITR04950 ITR04951 ITR04952 ITR04953 ITR04954
Text: Ordering number:ENN4721 PNP Epitaxial Planar Silicon Transistor 2SA1866 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=47kΩ, R2=47kΩ . · Very small-sized package making 2SA1866-applied sets small and slim.
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ENN4721
2SA1866
2SA1866-applied
2SA1866]
"marking ca"
2SA1866
ITR04950
ITR04951
ITR04952
ITR04953
ITR04954
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2SD1618
Abstract: No abstract text available
Text: Ordering number : EN1784C 2SD1618 Bipolar Transistor 15V, 0.7A, Low VCE sat , NPN Single PCP http://onsemi.com Features • • Low collector-to-emitter saturation voltage Very small size making it easy to provide highdensity, small-sized hybrid IC’s Specifications
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EN1784C
2SD1618
250mm2Ã
2SD1618
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1804 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804
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2SD1804
2SD1804
O-252
2SD1804L
O-252
2SD1804-x-TN3-F-R
2SD1804L-x-TN3-F-R
2SD1804L-x-TN3-F-R
QW-R209-006
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AT-32011
Abstract: AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them
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AT-32011,
AT-32033
AT-32011
AT-32033
OT-23,
OT-143.
AT-32011:
AT-32033:
AT-32011-BLK
AT-32011-TR1
AT-32033-BLK
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AT-31011
Abstract: AT-310 AT-31011-BLK AT-31011-TR1 AT-31033
Text: AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in
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AT-31011,
AT-31033
AT-31011
AT-31033
OT-23,
AT-31011
OT-143.
AT-31011:
AT-31033:
AT-310
AT-31011-BLK
AT-31011-TR1
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610E
Abstract: 800E CA3227 CA3227E CA3227M CA3227M96
Text: CA3227 TM Data Sheet High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the transistors exhibits a value of fT in excess of 3GHz, making
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CA3227
CA3227
610E
800E
CA3227E
CA3227M
CA3227M96
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MAX8863REUK-T
Abstract: MAX8863SEUK-T MAX8863T MAX8863TEUK-T MAX8864 MAX8864REUK-T MAX8864SEUK-T MAX8864TEUK-T marking da sot23-5 AABV
Text: 19-0466; Rev 2; 11/98 Low-Dropout, 120mA Linear Regulators The MAX8863T/S/R and MAX8864T/S/R low-dropout linear regulators operate from a +2.5V to +6.5V input range and deliver up to 120mA. A PMOS pass transistor allows the low, 80µA supply current to remain independent of load, making these devices ideal for
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120mA
MAX8863T/S/R
MAX8864T/S/R
120mA.
MAX8863/MAX8864
MAX8863REUK-T
MAX8863SEUK-T
MAX8863T
MAX8863TEUK-T
MAX8864
MAX8864REUK-T
MAX8864SEUK-T
MAX8864TEUK-T
marking da sot23-5
AABV
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Marking DA SOT23-5
Abstract: MAX8863REUK MAX8863SEUK MAX8863T MAX8863TEUK MAX8864 MAX8864REUK MAX8864SEUK MAX8864TEUK MOSFET "MARKING CODE 7V"
Text: 19-0466; Rev 3; 5/11 Low-Dropout, 120mA Linear Regulators The MAX8863T/S/R and MAX8864T/S/R low-dropout linear regulators operate from a +2.5V to +6.5V input range and deliver up to 120mA. A PMOS pass transistor allows the low, 80µA supply current to remain independent of load, making these devices ideal for
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120mA
MAX8863T/S/R
MAX8864T/S/R
120mA.
MAX8863T/S/R,
MAX8864T/S/R
Marking DA SOT23-5
MAX8863REUK
MAX8863SEUK
MAX8863T
MAX8863TEUK
MAX8864
MAX8864REUK
MAX8864SEUK
MAX8864TEUK
MOSFET "MARKING CODE 7V"
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IC AND GATE 7408 specification sheet
Abstract: TOP CODE ABZH ABZK
Text: MAX8873T/S/R, MAX8874T/S/R Low-Dropout, 120mA Linear Regulators _General Description _Features The MAX8873T/S/R and MAX8874T/S/R low-dropout linear regulators operate from a +2.5V to +6.5V input range and deliver up to 120mA. A PMOS pass transistor allows the low, 82µA supply current to remain independent of load, making these devices ideal for
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MAX8873T/S/R,
MAX8874T/S/R
120mA
MAX8873T/S/R
120mA.
IC AND GATE 7408 specification sheet
TOP CODE ABZH
ABZK
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IC AND GATE 7408 specification sheet
Abstract: IC free 7404 7408 voltage regulator TOP CODE ABZH IC 7408 and function ABZK
Text: MAX8873T/S/R, MAX8874T/S/R Low-Dropout, 120mA Linear Regulators _General Description _Features The MAX8873T/S/R and MAX8874T/S/R low-dropout linear regulators operate from a +2.5V to +6.5V input range and deliver up to 120mA. A PMOS pass transistor allows the low, 82µA supply current to remain independent of load, making these devices ideal for
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MAX8873T/S/R,
MAX8874T/S/R
120mA
MAX8873T/S/R
120mA.
IC AND GATE 7408 specification sheet
IC free 7404
7408 voltage regulator
TOP CODE ABZH
IC 7408 and function
ABZK
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Light Detector laser
Abstract: No abstract text available
Text: Time Resolved Emission Microscope Series S el ecti on Selection/Specifications S peci f i cat i ons The table below lists selectable items including detector cameras, lasers, objective lenses and probers. Ports for Detectors For CAMERA 3 One port is used by 2-D time-resolved detector
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C8250-27
C9985-04
M10902
C9215-06
Light Detector laser
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thermistor ntc 10k
Abstract: ZXCS2000 LED monitor circuit diagram NPIS64D100MTRF NY TRANSISTOR MAKING ZXLD1321 High Current Switching Applications transistor LED power INDUCTOR murata thermistor 103KT1608
Text: ZXLD1321 Boost mode DC-DC converter for LED driving with 1A output and current control Description The ZXLD1321 is an inductive DC-DC converter, with an internal switch, designed for driving single or multiple LEDs in series up to a total of 1A output current.
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ZXLD1321
ZXLD1321
D-81541
thermistor ntc 10k
ZXCS2000
LED monitor circuit diagram
NPIS64D100MTRF
NY TRANSISTOR MAKING
High Current Switching Applications transistor
LED power INDUCTOR
murata thermistor
103KT1608
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8327 transistor
Abstract: transistor 8323 S-8327 Step-up Converter sot-23-5 S-8323AXXMC S-8323A25MC-ELF-T2
Text: SMALL-PACKAGE PWM CONTROL STEP-UP SWITCHING REGULATOR Consisting of a reference voltage source, an oscillation circuit, a power MOSFET and an error amplifier, this series of devices offer high efficiency over a wide range because the control circuit has the ability to change the duty ratio between
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S-8323
S-8327
2200pF
S-8323AXXMA,
S-8323AXXUA,
S-8323CXXMA
S-8327EXXMC,
S-8327JXXMC
8327 transistor
transistor 8323
Step-up Converter sot-23-5
S-8323AXXMC
S-8323A25MC-ELF-T2
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RT1N241M
Abstract: RT1N241C RT1N241S RT1N241 RT1N241U RT1N241X RT1P241X
Text: 〈Transistor〉 ＲＴ１Ｎ２４１Ｘ SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING UNIT：mm RT1N241X is a one chip transistor with built-in bias resistor,PNP type is RT1P241X.
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RT1N241X
RT1P241X.
RT1N241U
RT1N241C
SC-59
O-236
RT1N241M
RT1N241S
RT1N241M
RT1N241C
RT1N241S
RT1N241
RT1N241U
RT1P241X
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RT1P441C
Abstract: RT1N441X RT1P441M RT1P441S RT1P441T RT1P441U
Text: 〈Transistor〉 ＲＴ１Ｐ４４１Ｘ SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE RT1P441X is a one chip transistor with built-in bias resistor,NPN type is RT1N441X. DRAWING RT1P441U UNIT：mm
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RT1P441X
RT1N441X.
RT1P441U
RT1P441C
JEITASC-59
O-236
RT1P441C
RT1N441X
RT1P441M
RT1P441S
RT1P441T
RT1P441U
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RFM08U9X
Abstract: No abstract text available
Text: RFM08U9X TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RFM08U9X RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These
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RFM08U9X
RFM08U9X
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transistor A 564
Abstract: S-AV8 2-13B1A 564 transistor S-AU4
Text: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the
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OCR Scan
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TcS90
transistor A 564
S-AV8
2-13B1A
564 transistor
S-AU4
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