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    TRANSISTOR M33 Search Results

    TRANSISTOR M33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR M33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M33 nec

    Abstract: M33 TRANSISTOR NESG2046M33 marking T7
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		PDF NESG2046M33 NESG2046M33-T3 M33 nec M33 TRANSISTOR NESG2046M33 marking T7

    NESG2107M33

    Abstract: NESG2107M33-A NESG2107M33-T3-A A720A
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification


    Original     		PDF NESG2107M33 NESG2107M33-T3 NESG2107M33-A NESG2107M33-T3-A NESG2107M33 NESG2107M33-A NESG2107M33-T3-A A720A

    transistor m33

    Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package


    Original     		PDF NE851M33 NE851M33-T3 transistor m33 NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC

    maximum gain s2p

    Abstract: NE851M33 NE851M33-T3 NE851M33-T3-A MARKING CODE m33 M33 TRANSISTOR NEC MARKING CODE M33 marking
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33, 0804 PKG) package


    Original     		PDF NE851M33 NE851M33-A NE851M33-T3 NE851M33-T3-A maximum gain s2p NE851M33 NE851M33-T3 NE851M33-T3-A MARKING CODE m33 M33 TRANSISTOR NEC MARKING CODE M33 marking

    M33 TRANSISTOR

    Abstract: NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold (M33) package


    Original     		PDF NE687M33 NE687M33-T3 M33 TRANSISTOR NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF NESG2046M33 NESG2046M33 NESG2046M33-T3 NESG2046M33-A NESG2046M33-T3-A

    date code marking NEC

    Abstract: NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz 2 • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF NE685M33 NE685M33-T3 date code marking NEC NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR

    date code marking NEC

    Abstract: NEC TRANSISTOR MARKING CODE code marking NEC NEC MARKING CODE nec npn rf
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold package


    Original     		PDF NE851M33 NE851M33 NE851M33-T3 PU10343EJ01V0DS date code marking NEC NEC TRANSISTOR MARKING CODE code marking NEC NEC MARKING CODE nec npn rf

    marking NEC rf transistor

    Abstract: nec npn rf
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted


    Original     		PDF NESG2107M33 NESG2107M33 NESG2107M33-T3 NESG2107M33-A NESG2107M33-T3-A marking NEC rf transistor nec npn rf

    uj01

    Abstract: M33 TRANSISTOR
    Text: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ElICTION DEVICE GN1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 2.1±0.1 1.25±0.1 LO 1P C~ -14 M 0 0+1 96 Ln 2 _+ C14 0 Resistors Built-in TYPE


    Original     		PDF TC-2173 1988M uj01 M33 TRANSISTOR

    code marking NEC

    Abstract: date code marking NEC NEC MARKING CODE
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold package


    Original     		PDF NE687M33 NE687M33 NE687M33-T3 PU10342EJ01V0DS code marking NEC date code marking NEC NEC MARKING CODE

    NEC TRANSISTOR MARKING CODE

    Abstract: date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF NE685M33 NE685M33 NE685M33-T3 PU10341EJ01V0DS NEC TRANSISTOR MARKING CODE date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor

    M33 TRANSISTOR

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION


    Original     		PDF NESG2107M33 NESG2107M33 NESG2107M33-T3 M33 TRANSISTOR

    NESG2107M33

    Abstract: NESG2107M33-A NESG2107M33-T3-A
    Text: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION


    Original     		PDF NESG2107M33 NESG2107M33-A NESG2107M33-T3-A NESG2107M33 NESG2107M33-A NESG2107M33-T3-A

    NE851M33

    Abstract: NE851M33-T3-A
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33-A 50 pcs (Non reel)


    Original     		PDF NE851M33 NE851M33-A NE851M33-T3-A NE851M33 NE851M33-T3-A

    M33 TRANSISTOR

    Abstract: transistor m33 MARKING W2 NE687M33 NE687M33-T3
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33 50 pcs (Non reel)


    Original     		PDF NE687M33 NE687M33-T3 M33 TRANSISTOR transistor m33 MARKING W2 NE687M33 NE687M33-T3

    NE687M33

    Abstract: NE687M33-A NE687M33-T3-A MARKING CODE m33
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33-A 50 pcs (Non reel)


    Original     		PDF NE687M33 NE687M33-A NE687M33-T3-A NE687M33 NE687M33-A NE687M33-T3-A MARKING CODE m33

    NE685M33

    Abstract: NE685M33-T3
    Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION


    Original     		PDF NE685M33 NE685M33-T3 NE685M33 NE685M33-T3

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D bbS3T31 00307b0 bbD * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		PDF bbS3T31 00307b0 PINNING-SOT186 BUK545-60A/B BUK545 0Q307b4

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    M33 thermal

    Abstract: BUK545 BUK545-60A BUK545-60B
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSB^Bl QD307b0 bt.D « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		PDF QD307b0 BUK545-60A/B BUK545 M33 thermal BUK545-60A BUK545-60B

    NF 831

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB typ. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.


    OCR Scan     		PDF 2SC5186 2SC5186-T1 NF 831

    Untitled

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00


    OCR Scan     		PDF CMBT4403 23A33T4

    1A4M

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE / FN 1A 4M MEDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • Resistors B u ilt-in TYPE in m illim e te r s HC, O-AA'VR = 1 0 k i2 • 10 k n l~A/W-4 R’


    OCR Scan     		PDF