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    TRANSISTOR M122 Search Results

    TRANSISTOR M122 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR M122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    Untitled

    Abstract: No abstract text available
    Text: MS652/MS652S 5.0 Watts, 12.5 Volts, Class C UHF Applications GENERAL DESCRIPTION The MS652/MS652S is a common emitter and 12.5V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands severe mismatch under normal operating conditions.


    Original     		PDF MS652/MS652S MS652/MS652S MS652 MS652S CHARACTERI12

    Untitled

    Abstract: No abstract text available
    Text: MS652/MS652S 5.0 Watts, 12.5 Volts, Class C UHF Applications GENERAL DESCRIPTION The MS652/MS652S is a common emitter and 12.5V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands severe mismatch under normal operating conditions.


    Original     		PDF MS652/MS652S MS652/MS652S MS652 MS652S

    Untitled

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5944 RF & MICROWAVE TRANSISTORS 450-512MHZ CLASS C MOBILE APPLICATIONS CLASS C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN COLLECTOR EFFICIENCY


    Original     		PDF 2N5944 450-512MHZ 470MHz M122I 2N5944 2KI5944 -50mA -470MH?

    VK200-19/4B

    Abstract: vk200 choke STMicroelectronics marking code date voltronics Date Code Marking STMicroelectronics vk200 M122 SD1433 UNELCO
    Text: SD1433 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 470 MHz Figure 1. Package ■ 12.5 VOLTS ■ CLASS C ■ EFFICIENCY 60% ■ COMMON EMITTER ■ POUT = 10 W MIN. WITH 8.0 dB GAIN DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications in


    Original     		PDF SD1433 SD1433 VK200-19/4B vk200 choke STMicroelectronics marking code date voltronics Date Code Marking STMicroelectronics vk200 M122 UNELCO

    transistor M122

    Abstract: SD1433 3M-K6098 M122 3M-K-6098
    Text: SD1433 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 470 MHz Figure 1. Package ■ 12.5 VOLTS ■ CLASS C ■ EFFICIENCY 60% ■ COMMON EMITTER ■ POUT = 10 W MIN. WITH 8.0 dB GAIN DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications in


    Original     		PDF SD1433 SD1433 transistor M122 3M-K6098 M122 3M-K-6098

    M122

    Abstract: SD1420 SD1420-01
    Text: SD1420 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION P OUT = 2.1 W MIN. WITH 9.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1420 BRANDING


    Original     		PDF SD1420 SD1420 SD1420-01. M122 SD1420-01

    M122

    Abstract: SD1420 SD1420-01
    Text: SD1420 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 2.1 W MIN. WITH 9.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1420 BRANDING


    Original     		PDF SD1420 SD1420 SD1420-01. M122 SD1420-01

    voltronics

    Abstract: AJ10 M122 SD1135 AJ-10
    Text: SD1135 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS EFFICIENCY 60% COMMON EMITTER P OUT = 5.0 W MIN. WITH 8.5 dB GAIN .280 2L STUD M122 epoxy sealed ORDER CODE SD1135 BRANDING SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon


    Original     		PDF SD1135 SD1135 voltronics AJ10 M122 AJ-10

    3M-K-6098

    Abstract: SD1135 3M-K6098 AJ10 M122
    Text: SD1135 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS EFFICIENCY 60% COMMON EMITTER POUT = 5.0 W MIN. WITH 8.5 dB GAIN .280 2L STUD M122 epoxy sealed ORDER CODE SD1135 BRANDING SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon


    Original     		PDF SD1135 SD1135 3M-K-6098 3M-K6098 AJ10 M122

    vk200

    Abstract: VK200-19/4B M122 SD1433
    Text: SD1433 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER POUT = 10 W MIN. WITH 8.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1433 BRANDING SD1433 PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN


    Original     		PDF SD1433 SD1433 vk200 VK200-19/4B M122

    thomson capacitor

    Abstract: AJ10 M122 SD1134 SD1134 transistor
    Text: SD1134 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 450 - 512 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER P OUT = 2.0 W MIN. WITH 10.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1134 BRANDING SD1134 PIN CONNECTION DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon


    Original     		PDF SD1134 SD1134 thomson capacitor AJ10 M122 SD1134 transistor

    3M-K-6098

    Abstract: AJ10 M122 SD1134 vk 200
    Text: SD1134 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 450 - 512 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER POUT = 2.0 W MIN. WITH 10.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1134 BRANDING SD1134 PIN CONNECTION DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon


    Original     		PDF SD1134 SD1134 3M-K-6098 AJ10 M122 vk 200

    VK200-19/4B

    Abstract: choke vk200 vk200 3M-K-6098 M122 SD1433
    Text: SD1433 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P OUT = 10 W MIN. WITH 8.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1433 BRANDING SD1433 PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN


    Original     		PDF SD1433 SD1433 VK200-19/4B choke vk200 vk200 3M-K-6098 M122

    SO42

    Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
    Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002


    Original     		PDF PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier

    PGA68

    Abstract: clcc44 SO53 material declaration semiconductor package FDIP28 schottky diode sb 5400 CLCC68 CLCC52 smd transistor marking 7622 DIP40 weight
    Text: CHEMICAL CONTENT OF SEMICONDUCTOR PACKAGING SEPTEMBER 1998 Corp. Environment Strategies Corp. Package Development USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE


    Original     		PDF GS-150T 102x51x19 GS-100T GS-R1005 PGA68 clcc44 SO53 material declaration semiconductor package FDIP28 schottky diode sb 5400 CLCC68 CLCC52 smd transistor marking 7622 DIP40 weight

    SO42

    Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
    Text: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520


    Original     		PDF PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S SO42 sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100

    SD1470

    Abstract: M168 2n3733 M111 M137 SD4013 M122 S042 SD1050 SD1060
    Text: SILICON POWER TRANSISTORS VHF/UHF TRANSISTOR! Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications in the 100 - 500 MHz and 500 - 1000 MHz frequency ranges. Hi-rel screening and qualification testing


    OCR Scan     		PDF SD1050 SD1060 SD1075 SD4012 SD1462 SD1468 SD1470 SD1463 SD1464 2N3375 M168 2n3733 M111 M137 SD4013 M122 S042

    Untitled

    Abstract: No abstract text available
    Text: / = T SGS-THOMSON _ SD1135 RF & MICROWAVE TRANSISTORS _ UHF MOBILE APPLICATIONS • . ■ . ■ 470 MHz 12.5 VOLTS EFFICIENCY 60% COMMON EMITTER P out = 5.0 W MIN. WITH 8.5 dB GAIN -> ' f î > .280 2L STU D M122 epoxy sealed


    OCR Scan     		PDF SD1135 SD1135

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON SD1134 ^7#. K M « « ® « ! RF & MICROWAVE TRANSISTO RS UHF MOBILE APPLICATIONS • . ■ . 450 - 512 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER ■ P o u t = 2.0 W MIN. WITH 10.0 dB GAIN dr R> .280 4L STUD M122 epoxy sealed ORDER CODE


    OCR Scan     		PDF SD1134 SD1134

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON SD1433 ^7#. K M « « ® « ! RF & MICROWAVE TRANSISTO RS UHF MOBILE APPLICATIONS • . ■ . ■ . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER p OUT = 10 W MIN. WITH 8.0 dB GAIN dr l|—^ R> .280 4L STUD M122 epoxy sealed


    OCR Scan     		PDF SD1433 SD1433

    mark 5503 MOSFET

    Abstract: m233 transistor TH-3 TH-4 TH-6 transistor m236
    Text: / Dimensions mm Lead-1 Lead-1 A Lead-2 Lead-2A Lead-3 Lead-3A Voltage dass, Lot No. 'A \ aO.E 25 min. Lead-4 Cathode mark class, Lot No. 03.0 5.0 ^ \ 00.8 Cathode mark / 25 min. 28 min. Lead-5A Voltage class, Lot No. -1*4- 5.0 03.0 28 min. Lead-6 Voltage dass, Lot No.


    OCR Scan     		PDF Lead-10 Lead-11 Lead-12 Lea04A R605A R606A R607A M24-1F/R 15kg-cm M24-2F/R mark 5503 MOSFET m233 transistor TH-3 TH-4 TH-6 transistor m236

    a21sc

    Abstract: TR4943 A21S p60 hall LC66P308 TRANSISTOR p50 EN3122A 42-pin intel intel EPROM 27128 2U05
    Text: Ordering number: EN3122A. CMOS LSI LC66P308 No. 3 1 2 2 A SA \YO i 4-bit Microcontroller with Built-in PROM OVERVIEW PINOUTS The LC66P308 is a 4-bit microcontroller with a built-in 8 Kbyte PROM. It is compatible with the LC663XX series mask ROM devices, making it ideal for prototyp­


    OCR Scan     		PDF EN3122A. LC66P308 LC66P308 LC663XX 42-pin 48-pin M122-17/17 a21sc TR4943 A21S p60 hall TRANSISTOR p50 EN3122A 42-pin intel intel EPROM 27128 2U05

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram