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    TRANSISTOR LT 186 Search Results

    TRANSISTOR LT 186 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR LT 186 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mcp 9700E

    Abstract: mcp 9700E TO mcp9701e Tip 26C transistor DS01001 MCP9701-E 9700E mcp9700a 9700A MCP9700E
    Text: MCP9700/9700A MCP9701/9701A Low-Power Linear Active Thermistor ICs Features Description • Tiny Analog Temperature Sensor • Available Packages: SC-70-5, TO-92-3 • Wide Temperature Measurement Range: - -40°C to +125°C • Accuracy: - ±2°C max. , 0°C to +70°C (MCP9700A/9701A)


    Original     		PDF MCP9700/9700A MCP9701/9701A SC-70-5, O-92-3 MCP9700A/9701A) MCP9700/9701) mcp 9700E mcp 9700E TO mcp9701e Tip 26C transistor DS01001 MCP9701-E 9700E mcp9700a 9700A MCP9700E

    transistor DA3 309

    Abstract: SVPWM TMS320F240 svpwm c code 3 phase inverter T-CON Schematic svpwm inverter schematic schematic diagram UPS inverter schematic diagram UPS inverter three phase 220v DC MOTOR pwm TMS320F2406
    Text: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest


    Original     		PDF TMS320F240 BPRA077 transistor DA3 309 SVPWM TMS320F240 svpwm c code 3 phase inverter T-CON Schematic svpwm inverter schematic schematic diagram UPS inverter schematic diagram UPS inverter three phase 220v DC MOTOR pwm TMS320F2406

    schematic diagram UPS inverter three phase

    Abstract: 3 phase inverter schematic diagram three phase on line ups circuit diagrams schematic diagram UPS inverter phase transistor DA3 309 single phase igbt based inverter 200 amps circuit schematic diagram UPS inverter svpwm inverter schematic Marelli 3 phase UPS block diagram
    Text: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest


    Original     		PDF TMS320F240 BPRA077 schematic diagram UPS inverter three phase 3 phase inverter schematic diagram three phase on line ups circuit diagrams schematic diagram UPS inverter phase transistor DA3 309 single phase igbt based inverter 200 amps circuit schematic diagram UPS inverter svpwm inverter schematic Marelli 3 phase UPS block diagram

    transistor DA3 309

    Abstract: BPRA077 svpwm inverter schematic T-CON Schematic transistor DA1 309 svpwm c code 3 phase inverter F240 IRGPC40F TLE2141 TMS320F240
    Text: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the


    Original     		PDF TMS320F240 BPRA077 transistor DA3 309 BPRA077 svpwm inverter schematic T-CON Schematic transistor DA1 309 svpwm c code 3 phase inverter F240 IRGPC40F TLE2141 TMS320F240

    F527S

    Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
    Text: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.


    OCR Scan     		PDF Cas-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> F527S 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •F e a tu re s IcMax. = - 5 0 0 m A 2) • E x t e r n a l d im e n s io n s (U nits: m m ) L a rg e lc. 2SA1577 2SA1036K L o w VcE(sat). O p tim a l f o r lo w - v o lt'¿±0.1


    OCR Scan     		PDF 2SA1036K/2SA1577/2SA854S 2SA1577 2SA1036K SC-59 SC-70 0Dlb713 O-220FN O-220FN O220FP T0-220FP,

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2223 HIGH FREQUENCY AMPLIFIER Vary small size to assure good space factor in hybrid 1C applications • »T= 600MHz Typ. lE= -1mA • Cob=1pF Typ (Vcs=6V) • NF=3dB Typ (f=100MHz) SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSC2223 600MHz 100MHz) OT-23 00247ti0 7Tb414E DDE47bl

    Untitled

    Abstract: No abstract text available
    Text: I— I P E Xe POWER OPERATIONAL AMPLIFIERS PA08 • PA08A APEX MICROTECHNOLOGY CORPORATION « TUCSON, ARIZONA « APPLICATIONS HOTLINE 8 0 0 421-18651 FEATURES • • • • • WIDE SUPPLY RANGE — ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT — Up to ± 150mA


    OCR Scan     		PDF PA08A 150mA 130mA 200mA

    AC 187 npn transistor TO 1

    Abstract: Transistor AC 188 transistor lt 186 Transistor AC 187 2SC3906K
    Text: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available In SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package package marking: 2SC3906K and 2SC4102; T * . where ★ is hFE code high breakdown voltage, Vceo = 120 V complementary pair with 2SA1514K


    OCR Scan     		PDF 2SC3906K 2SC4102 SC-59) SC-70) 2SC4102; 2SA1514K 2SA1579 2SC3906K AC 187 npn transistor TO 1 Transistor AC 188 transistor lt 186 Transistor AC 187

    transistor lt 186

    Abstract: NPN Transistor 10A 400V KSC2751 400V 10A NPN transistor
    Text: KSC2751 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector- Base Voltage VcBO 500 V Collector- Emitter Voltage VcEO 4 00 V Emitter- Base Voltage V ebo 7 V 15 A Symbol


    OCR Scan     		PDF KSC2751 transistor lt 186 NPN Transistor 10A 400V KSC2751 400V 10A NPN transistor

    transistor lt 186

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2751 HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE T O -3P ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector Current DC 'C o lle c to r Current (Pulse)


    OCR Scan     		PDF KSC2751 transistor lt 186

    Untitled

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1330 HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FE A TU R ES • High Voltage: V c e o = —200 V • High DC C u rrent Gain: hpE = 90 to 450 • C om plem entary to 2SC3360 A B S O LU T E M A X IM U M R A T IN G S


    OCR Scan     		PDF 2SA1330 2SC3360

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


    OCR Scan     		PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175

    Untitled

    Abstract: No abstract text available
    Text: 8. Handling Techniques of M IN I M O L D Device It is necessary to take fu ll cares in using the M IN I M O L D device in o rde r to m aintain its high q u a lity and re li­ a b ility , in same manner as in the case o f o rd in a ry transistor. The fo llo w in g are environm ental c o n d itio n s encountered


    OCR Scan     		PDF

    philips ET-E 60

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E bTE D • bb 53 T 3 1 □D3D4TD bSS H A P X Philips Semiconductors Product Specification Pow erM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		PDF BUK437-600B philips ET-E 60

    6DI50M-120

    Abstract: P930 T151 T460 T760 b426 mtki B-426 GPR circuit schematic PC1860
    Text: 6 D I5 0 M -1 2 0 5 0 a '<n — POWER TRANSISTOR MODULE W ffi-fk Features • High Arm Short Circuit Capability • High DC Current Gain • 7U— — KrtflS Including Freewheeling Diode • f l & i I n s u l a t e d Type Applications — 9 General Purpose


    OCR Scan     		PDF 6DI50M-1 E82986 I95t/R89) Shl50 6DI50M-120 P930 T151 T460 T760 b426 mtki B-426 GPR circuit schematic PC1860

    SIPMOS application note

    Abstract: SIEMENS MOSFET application BSS125
    Text: SIEMENS 5 Application Notes FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components b y W a lt e r S c h u m b r u tz k i With higher clock frequencies in power switches inverse-capable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (< 2 kW) MOS half­


    OCR Scan     		PDF X0183 SIPMOS application note SIEMENS MOSFET application BSS125

    a2hb transistor

    Abstract: 1000A diode Transistor AC 188 A2HB 20/a2hb transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM 1000H A-2HB HIGH POWER SWITCHING USE INSULATED TYPE | QM1000HA-2HB • Ic Collector current. • V C EX Collector-emitter voltage. • hFE DC current gain. 10 00A 1000V


    OCR Scan     		PDF 1000H QM1000HA-2HB E8Q276 E80271 a2hb transistor 1000A diode Transistor AC 188 A2HB 20/a2hb transistor

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    TA 7122 AP

    Abstract: MB7122E MB7122 MB7121E TP 7122 MB7121 AC 188 pnp transistor TO 1
    Text: FU JITSU MB7121E/H MB7122E/H/Y MB7121L MB7122L P R O G R A M M A B LE S C H O T T K Y 4 0 9 6 -B IT R EA D ONLY M EM ORY 'D e c e m b e r 1987 E d itio n 3 .0 SCHOTTKEY 4096-RT DEAP PROM 1024 WORDS X 4 BITS The Fujitsu MB7121 and MB7122 are high speed Schottky T T L electrically


    OCR Scan     		PDF MB7121E/H MB7122E/H/Y MB7121L MB7122L 4096-RT MB7121 MB7122 MB7122, TA 7122 AP MB7122E MB7121E TP 7122 AC 188 pnp transistor TO 1

    ap 4466

    Abstract: p 4466
    Text: F SAMYO i N O .2 0 8 0 C L A A A 6 5 ^ 4 4 6 6 M o n o l i t h i c L i n e a r IC BTL-OCL 1 2 W A F P o w e r Amp f o r C a r S t e r e o Us e 'X v., Features • B a s i c a l l y p in - c o m p a t i b l e w i t h th e L A ^ ^ 6 5 N , 4 M6 1 N Ho:ÿi f v e r <§|lSi>id ei ¿ la n g e s m u st


    OCR Scan     		PDF LA44AS 100ohms ap 4466 p 4466

    4461N

    Abstract: ic 4466 LA4465 transistor bc 132
    Text: F SAMYO i N O .2 0 8 0 C L A A A 6 5 ^ 4 4 6 6 M o n o l i t h i c L i n e a r IC BTL-OCL 1 2 W A F P o w e r Amp f o r C a r S t e r e o Us e 'X v., Features • B a s i c a l l y p in - c o m p a t i b l e w i t h th e L A ^ ^ 6 5 N , 4 M6 1 N Ho:ÿi f v e r <§|lSi>id ei ¿ la n g e s m u st


    OCR Scan     		PDF 2080C LAAA65^ 200uA/typ. LA446S 0i01u 100ohms 4461N ic 4466 LA4465 transistor bc 132

    8U406

    Abstract: BC317 Philips philips e3 407F flyback transformer philips BU406F BU407F Q030 407F Transistors
    Text: PHILIPS INT ERNATIONAL MSE D E3 7 3tlüö2fci OOaüôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators


    OCR Scan     		PDF 711005b BU406F BU407F OT186 8U406 BC317 Philips philips e3 407F flyback transformer philips BU407F Q030 407F Transistors

    tfk 186

    Abstract: BF115 BF 183 transistor BF 182 transistor TFK S 186 BF 186 tfk 145 transistor bf 184 BF 184 NPN transistor BF 184 transistor
    Text: V BF 115 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis 100 MHz Applications: General up to 100 MHz Abmessungen in mm Dimensions in mm 2,54 *4,8 »5,7 «0,5 -:— f - — Í t •*- 13-►


    OCR Scan     		PDF