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    TRANSISTOR L 2050 Search Results

    TRANSISTOR L 2050 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR L 2050 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    capacitor 35 v

    Abstract: 20231 bav 17 diode
    Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power


    Original     		PDF G-200, 1-877-GOLDMOS 1301-PTE capacitor 35 v 20231 bav 17 diode

    e20231

    Abstract: 20231 transistor E101
    Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power


    Original     		PDF G-200, 1-877-GOLDMOS 1301-PTE e20231 20231 transistor E101

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSD362 CSD362 NPN PLASTIC POWER TRANSISTOR B/W TV Horizontal Deflection Output PIN CONFIGURATION


    Original     		PDF O-220 CSD362 C-120

    fzh 141

    Abstract: FZH 131 fzh 105 fzh 115 FZH 105 A MC2003 FZH 121 MC2073 MC2100 MC2002
    Text: ged dd INTEGRATED CIRCUITS FROM MOTOROLA l ! l l DO MC2000 Series 0 to +75°C MC2100 Series (—55 to +125°C) M TT L II integrated circuits comprise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed (30-50


    OCR Scan     		PDF MC2000 MC2100 MC2028/MC2078 MC2128/MC2178 fzh 141 FZH 131 fzh 105 fzh 115 FZH 105 A MC2003 FZH 121 MC2073 MC2002

    MC2124

    Abstract: MC2150
    Text: mm dd INTEGRATED CIRCUITS FROM MOTOROLA 1 ! I DO MC2000 Series 0 to +75°C MC2100 Series (—55 to +125°C) M TT L II integrated circuits comprise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed (30-50


    OCR Scan     		PDF MC2000 MC2100 MC2124 MC2150

    2SD1400

    Abstract: cp 06a
    Text: SANYO SEMICONDUCTOR 15E CORP » 1 7Tì7Q 7ti O O DS Qf l l - f '3 3 - 1 3 2SD1400 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1267B Features: • High brea k d o w n voltage and h i g h reliability


    OCR Scan     		PDF 2SD1400 1267B IS-126 1S-126A IS-20MA 2SD1400 cp 06a

    MC2003

    Abstract: MC2000 MC2023 MC2002 MC2100 MC2052 MC2124 MC2073 MC2112 MC2153
    Text: INTEGRATED CIRCU ITS FROM MOTOROLA mm oo M C2000 Series 0 to +75°C M C2100 Series (—55 to +125°C) M T T L II integrated circu its co m prise a fa m ily o f transistor-transistor logic designed fo r general pu rpo se digital applications. T h e fa m ily has a high o pe ratin g speed <30-50


    OCR Scan     		PDF MC2000 MC2100 MC2028/MC2078 MC2128/MC2178 MC2003 MC2023 MC2002 MC2052 MC2124 MC2073 MC2112 MC2153

    hp 3101 pin

    Abstract: hp 3101 CSD362
    Text: CSD362 CSD362 NPN PLASTIC POWER TRANSISTOR B /W TV Horizontal Deflection Output L s DIM A 8 C D E F G H J K L M N MIN MAX 14.42 9,63 3.56 16.51 10.67 4.83 0,90 1.15 1,40 3,75 3.88 2,29 2.79 2.54 3.43 0 ,56 12.70 14.73 6.35 2.03 2.92 31.24 7 DEG ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CSD362 CSD362 hp 3101 pin hp 3101

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    2SK376

    Abstract: DDD3710 VLN 2003a
    Text: SANYO SEMICONDUCTOR CORP 1B E » 1 i m U l h 0D0S3Û0 2SK376 N-Channel Junction Silicon Field-Effect Transistor 2037 1432A Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.


    OCR Scan     		PDF 0D053Ã 2SK376 2SK376 0DGB752 DDD3710 VLN 2003a

    JIS B1181

    Abstract: d 2037 transistor capacitor 0.22mA TRANSISTOR b1181 FOR TRANSISTOR BC 149 B 2042A 2SK376 DDD3710 B1181
    Text: SANYO SEMICONDUCTOR CORP 2SK376 1BE » 1 I ’ N-Channel Junction Silicon Field-Effect Transistor 2037 1432A i m U l h 0D0S3fl0 I Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.


    OCR Scan     		PDF 0D053Ã 2SK376 2SK376 B1181 B1252 JIS B1181 d 2037 transistor capacitor 0.22mA TRANSISTOR b1181 FOR TRANSISTOR BC 149 B 2042A DDD3710

    1s126a

    Abstract: 2SD1837 1S126
    Text: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 T-33- 2SD1837 2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features


    OCR Scan     		PDF 2SD1837 T-33-NPN IS-126 1S-126A IS-20MA 1s126a 2SD1837 1S126

    TG 2039

    Abstract: ic k1 sanyo marking JE b1181 2SC3189 DDD3710 LN 2003a b1251 n1cj marking 6j1
    Text: SANYO SEMICONDUCTOR 1BE T | CORP 7 * m i3 7 b ODCI4325 7 | r - 3 S - / l 2SC3189 2010A NPN Epitaxial Planar Silicon Transistor C R T Display Horizontal Deflection Output Applications 1313A Features . High switching speed. . Especially suited for high-definition CRT displays


    OCR Scan     		PDF 2SC3189 D00432S 0DGB752 TG 2039 ic k1 sanyo marking JE b1181 2SC3189 DDD3710 LN 2003a b1251 n1cj marking 6j1

    L1606

    Abstract: a 1201 sanyo 2SD1837
    Text: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 2SD1837 T-33-2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features


    OCR Scan     		PDF 2SD1837 T-33- B1252 0DGB752 L1606 a 1201 sanyo

    2SK686

    Abstract: ODDS445 t37h
    Text: SANYO SEMICONDUCTOR 15E D I CORP T-3^-|/ 2SK686 N-Channel M O S Silicon Field-Effect Transistor 2052A <£&m 7 cH7G7ti~ DODS441 High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute H a x l M Ratings at Ta=25°C


    OCR Scan     		PDF 2SK686 0DGB752 ODDS445 t37h

    2SK687

    Abstract: DDD3710
    Text: SANYO SEMICONDUCTOR CORP ÍEE DI 7cH707ki □□□S44b S T - V M l 2SK687 N -Channel M O S Silicon Field-Effect Transistor 2052A 2464A High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute Maxim» Ratings at Ta=25°C


    OCR Scan     		PDF 2SK687 QOaS44b 0DGB752 DDD3710

    K 2056 transistor

    Abstract: 2SK777
    Text: SANYO SEMICONDUCTOR Ï I Ë T 1 CORP 711707t 3 ? - 12. r - 2SK777 G0QSMb3 N-Channel M OS Silicon Fieid-Effect Transistor 2056 Very High Speed Switching Applications 2661 Features . Low ON résistance, very high-speed switching Absolute H a i l n Ratings at Ta=25°C


    OCR Scan     		PDF 711707t 2SK777 IS-126 1S-126A IS-20MA IS-313 IS-313A K 2056 transistor 2SK777

    2SK156

    Abstract: VLN 2003a HT 12E APPLICATION sj 2025 sj 2038 TRANSISTOR BC 313
    Text: SANYO Xtm CONPULTOR COKF 2SK156 r - ' x i - x z ' N-Channel Junction Silicon Field-Effect Transistor 2037 Capacitor Microphone Impedance Conversion Applications 540F A B S O L U T E M AXIMUM RA TIN G S/Ta = 2 5°C unit Gate drain voltage vdgo Gate current


    OCR Scan     		PDF 2SK156 B1181 B1252 0DUB722 2SK156 VLN 2003a HT 12E APPLICATION sj 2025 sj 2038 TRANSISTOR BC 313

    transistor BC 667

    Abstract: No abstract text available
    Text: SA NY O SEMICONDUCTOR 12 E D I CORP 7 c]lì7D?ti D 0 D S 1 4 S 3 3 - / 1 - p NPN Triple Diffused Planar Silicon Transistor 203 9 Color TV Horizontal Deflection Output Applications 17528 Applications . High-voltage, power switching Features . . . . Fast speed t^maxsO.Mus .


    OCR Scan     		PDF IS-20MA IS-313 IS-313A transistor BC 667

    j718

    Abstract: VK200/10-3B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,


    OCR Scan     		PDF MRF3010 DL110/D) MRF3010 VK200 j718 VK200/10-3B

    TRANSISTOR b1181

    Abstract: B1181 2SD1912 sanyo 1 knitter 34
    Text: LEE D I SANYO SEMICONDUCTOR CORP 2SD1912 7^ 70?^ t QDDSBB1 4 J “ - 3 3 - ^ 7 NPN Epitaxial Planar Silicon Transistor 201OA Low Frequency Power Amp Applications Features . Wide ASO adoption of MBIT process . Low saturation voltage . High reliability Absolute H a i l n Ratings at Ta=25°C


    OCR Scan     		PDF 2SD1912 QQQSB51 B1181 B1252 TRANSISTOR b1181 2SD1912 sanyo 1 knitter 34

    fcg 2045

    Abstract: 2SD1912
    Text: S AN Y O SEMICONDUCTOR LEE D I CORP 7=1170 7b QQ053B1 t 2SD1912 - 3 3 - ^ 7 NPN Epitaxial Planar Silicon Transistor 201OA Low Frequency Power Amp Applications Features . Wide ASO adoption of MBIT process . Low saturation voltage . High reliability Absolute H a i l n Ratings at Ta=25°C


    OCR Scan     		PDF 2SD1912 QDDSB21 0DGB752 fcg 2045

    2SC3173

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V


    OCR Scan     		PDF H707L, 2SC3173 201OA 1309B IS-20MA IS-313 IS-313A 2SC3173

    0985

    Abstract: ma 1050
    Text: ERICSSON í PTF 10035 30 Watts, 1 . 9 - 2 . 0 GHz L D M O S Field Effect Transistor Description The 10035 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum


    OCR Scan     		PDF P4917-ND P5276 5801-PC 0985 ma 1050