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    TRANSISTOR KT 837 Search Results

    TRANSISTOR KT 837 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KT 837 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3791 NPN Triple Diffused Planar Silicon Transistor 2SC4435 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=300ns max . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN3791 2SC4435 300ns 2SC4435]

    2SC4435

    Abstract: ITR06908 ITR06909 ITR06910 ITR06911 ITR06912 ITR06913
    Text: Ordering number:ENN3791 NPN Triple Diffused Planar Silicon Transistor 2SC4435 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=300ns max . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN3791 2SC4435 300ns 2SC4435] 2SC4435 ITR06908 ITR06909 ITR06910 ITR06911 ITR06912 ITR06913

    3773 P

    Abstract: No abstract text available
    Text: Ordering number:EN3791 NPN Triple Diffused Planar Silicon Transistor 2SC4435 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed tf=300ns max . · High brocking voltage (VCBO=1500V).


    Original     		PDF EN3791 2SC4435 300ns 2SC4435] 3773 P

    2SD1159

    Abstract: No abstract text available
    Text: Ordering number:EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features Package Dimensions • Capable of efficient drive with small internal loss due to excellent tf. unit:mm


    Original     		PDF EN837E 2SD1159 2010C 2SD1159] O-220AB SC-46 2SD1159

    2SD1159

    Abstract: ITR09972 ITR09973 ITR09974 ITR09975
    Text: Ordering number:ENN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features Package Dimensions • Capable of efficient drive with small internal loss due to excellent tf. unit:mm


    Original     		PDF ENN837E 2SD1159 2010C 2SD1159] O-220AB 2SD1159 ITR09972 ITR09973 ITR09974 ITR09975

    UMTS800

    Abstract: No abstract text available
    Text: !" PRELIMINARY DATASHEET WS2111 Power Amplifier Module for UMTS800 824-849MHz PRELIMINARY DATASHEET (DEVICE : WS2111, 4x4 UMTS800 PAM) Issued Date : August 25th , 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-07 !" PRODUCT DESCRIPTION


    Original     		PDF WS2111 UMTS800 824-849MHz) WS2111, UMTS800 WM-0409-07

    2sd1159

    Abstract: No abstract text available
    Text: Ordering number:ENN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features Package Dimensions • Capable of efficient drive with small internal loss due to excellent tf. unit:mm


    Original     		PDF ENN837E 2SD1159 2010C 2SD1159] 2sd1159

    JEDEC J-STD-033 TAPE AND REEL

    Abstract: IPC-7721 IPC 7721
    Text: !" PRELIMINARY DATASHEET WS1113 Power Amplifier Module for CDMA/AMPS 824-849MHz DATASHEET (DEVICE : WS1113, 4x4 PAM) Issued Date : January 29, 2005 1 Preliminary Information WM0501-13 !" PRODUCT DESCRIPTION WS1113 Power Amplifier Module for CDMA/AMPS(824-849MHz)


    Original     		PDF WS1113 824-849MHz) WS1113, WM0501-13 824-849MHz JEDEC J-STD-033 TAPE AND REEL IPC-7721 IPC 7721

    MA 7824

    Abstract: tl 7824 7824 SMD 7824 5A 7824 MAX INPUT VOLTAGE 7824 pin diagram of 7824 ACPM-7824 J-STD-020B J-STD-033
    Text: ACPM-7824 CELLULAR 4x4 Power Amplifier Module 824-849MHz Data Sheet Description Features The ACPM-7824 is a fully matched 10-pin surface mount module developed for CELLULAR. This power amplifier module operates in the 824-849MHz bandwidth. The ACPM-7824 meets stringent CDMA linearity requirements


    Original     		PDF ACPM-7824 824-849MHz) ACPM-7824 10-pin 824-849MHz 28dBm 50ohm AV02-1730EN MA 7824 tl 7824 7824 SMD 7824 5A 7824 MAX INPUT VOLTAGE 7824 pin diagram of 7824 J-STD-020B J-STD-033

    IPC 7353

    Abstract: ACPM-7353 J-STD-020B J-STD-033
    Text: ACPM-7353 CDMA Dual Band 4x5 Power Amplifier Module Cellular/PCS Data Sheet Description Features The ACPM-7353 is a dual-band PAM (Power Amplifier Module) designed for CDMA (code division multiple access) cellular and PCS. The ACPM-7353 meets stringent CDMA linearity requirements to and beyond 28dBm


    Original     		PDF ACPM-7353 ACPM-7353 28dBm 14-pin 50ohm AV02-1611EN IPC 7353 J-STD-020B J-STD-033

    Untitled

    Abstract: No abstract text available
    Text: ACPM-7355 UMTS Dual-Band 4x5mm Power Amplifier Module Band2/Band5 Data Sheet Description Features The ACPM-7355 is a dual-band PAM (Power Amplifier Module) designed for UMTS Band2 and Band5. The ACPM-7355 meets stringent UMTS linearity requirements. The 4mmx5mm form factor 14-pin surface mount package


    Original     		PDF ACPM-7355 ACPM-7355 14-pin 50ohm AV02-2016EN

    transistor BD 512

    Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
    Text: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier­ ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be­ stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern­


    OCR Scan     		PDF 12-VAkku /50Hz III/18/379 transistor BD 512 transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A

    sy 320 diode

    Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
    Text: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren


    OCR Scan     		PDF

    6P45S

    Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR | 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D


    OCR Scan     		PDF TGLIO395 III/I8/379 6P45S 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550

    Diode SY 345

    Abstract: STR F 6234 VEB mikroelektronik TRANSISTOR KT 837 mikroelektronik RFT STRALSUND RFT KB 100 Mitteilung VEB RFT EY500 aiwa tpr
    Text: SERVICE-MITTEILUNGEN VEB RFT I N D U S T R I E V E R T R I E B RUNDFUNK UND FER N SE H EN ¡RimnM l r a d io - t e / e v is io n | Ausgabe 1988 9-11 Seite 1 - 12 1. Mitteilung aus dem VEB RFT Industrievertrieb RuF Leipzig, Bereich S Raduga 726/730 - Neues Äquivalent für den Hochspannungsgleich­


    OCR Scan     		PDF

    full subtractor circuit using nand gates

    Abstract: pt6021 PC6D10 PT6041-5 VGT200 PT6011 subtractor using TTL CMOS PT6005 PT6021-5
    Text: s I TECHNOLOGY INC IflE =1300347 00032^2 1 • V LSI T e c h n o lo g y , in c. T~ 42-ll-C^ VAAST-INTELLIGENCE VGT200M SERIES GOVERNMENT PRODUCTS DIVISION CONTINUOUS GATE™ TECHNOLOGY Î3-M IC R 0N GATE ARRAY SERIES DESCRIPTION FEATURES Extensive Portable retargetable


    OCR Scan     		PDF VGT200M full subtractor circuit using nand gates pt6021 PC6D10 PT6041-5 VGT200 PT6011 subtractor using TTL CMOS PT6005 PT6021-5

    full subtractor circuit using decoder and nand ga

    Abstract: full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram
    Text: V L S I Technology , in c PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates 12,149 to 66,550 available gates The VGT100 Series is an advanced,


    OCR Scan     		PDF VGT100 100-063-A-23-096 full subtractor circuit using decoder and nand ga full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram

    2D 1002 diode

    Abstract: hfa15pb60
    Text: PD -2.340 International l O R Rectifier H FA 15PB60 Ultrafast, Soft Recovery Diode HEXFRED Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions


    OCR Scan     		PDF HFA15PB60 HFA15PB60 2D 1002 diode

    Kt 0912

    Abstract: full subtractor circuit using decoder and nand ga schematic transistor modul trigger full subtractor circuit using nand gates DR 4180 vlsi design physical verification VGT100160 Remington 700 full subtractor circuit using nor gates sis 968
    Text: V L SI Technology, inc . PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES 7 FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates (12,149 to 66,550 available gates The VGT100 Series is an advanced,


    OCR Scan     		PDF VGT100 100-063-A-23-096 Kt 0912 full subtractor circuit using decoder and nand ga schematic transistor modul trigger full subtractor circuit using nand gates DR 4180 vlsi design physical verification VGT100160 Remington 700 full subtractor circuit using nor gates sis 968

    Untitled

    Abstract: No abstract text available
    Text: LSI LOGIC LCA100K Compacted Array P lu s Series 0.7-Micron HCMOS Description The LCA100K Compacted Array Plus series is an HCMOS array-based ASIC product offering extremely high performance, combined with very high gate counts. The LCA100K series is manufac­


    OCR Scan     		PDF LCA100K

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier Pro, *. dv/dt R ATED HEXFET TRANSISTOR R E P E T IT IV E A V A L A N C H E A N D IRH N A7264SE N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11 on, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology


    OCR Scan     		PDF A7264SE 250Volt, California90245, S54S2

    VGT200

    Abstract: full subtractor circuit using decoder and nand ga
    Text: VLSI T ec h n o lo g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in thirteen sizes from 960 to 54,000 usable gates The VGT200 Series is an advanced, high performance CMOS gate array


    OCR Scan     		PDF VGT200 400-018-A-028 full subtractor circuit using decoder and nand ga

    R/CHN 041 diode

    Abstract: No abstract text available
    Text: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency


    OCR Scan     		PDF VGT300 R/CHN 041 diode

    LCD-8162JP

    Abstract: No abstract text available
    Text: L3E ]> 7Tï707b 001153^ S I S SANYO SEMICONDUCTOR CORP LC7232-8377 CMOS LSI 3044B *3 9 3 8 ITSAJ Single-chip PLL and Microcontroller w ith LCD Driver OVERVIEW The LC7232-8377 is a single-chip microcontroller that incorporates a phase-locked loop P L L and a liquid


    OCR Scan     		PDF LC7232-8377 3044B LC7232-8377 cl707fci D0U571 LA1875M LCD-8162JP