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    TRANSISTOR KSP 56 Search Results

    TRANSISTOR KSP 56 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KSP 56 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


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    PDF Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008

    uPD75217

    Abstract: PM3010 TRANSISTOR BC 187 IE-75001-R PD75216A uPD75236 uPD75P238
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    uPD75217

    Abstract: PH1PH TRANSISTOR BC 187 IE-75001-R uPD75237 uPD75P238
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG

    acrian RF POWER TRANSISTOR

    Abstract: transistor 2001 hi acrian 2001 acrian inc
    Text: T7 A C R I A N INC S E I DlñSTTñ D D 0 1 4 0 D 1 ’Ja iküa Sai JO wSh25«i KSP¡Sr n i km mrim mKm iwl WPÁi1 G EN ER A L 2001 D E S C R IP TIO N The 2001 is a common base transistor capable of providing 1.0 Watts of CW RF output power at 2000 MHz. This hermetically sealed transistor is specifically designed for


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    PDF 0D014D0 Vcb-28V 100mA acrian RF POWER TRANSISTOR transistor 2001 hi acrian 2001 acrian inc

    LW385

    Abstract: 28S166 DATA TRANSISTOR MOTOROLA TYPE MRA 14 /17 /25 ksp 13 f10 M38510 cross index 82S190 a2-o2 27S191 27s19 lw38510
    Text: MIL-*M-38510/210D Win-MIL-*M-38510/210C 31 January 1984 MILITARY SPECIFICATION nnM«Ii.C„R.0CI R C U I T S * DISIT*L, 16.384 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON This specification Is approved for use by all Depart­


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    PDF M-38510/210D M-38510/210C piat1nun-s111 CDWD/34371 CECO/50364 CDKB/18324 CCXP/27014 CECC/34649 CRP/07933 CG0/01295 LW385 28S166 DATA TRANSISTOR MOTOROLA TYPE MRA 14 /17 /25 ksp 13 f10 M38510 cross index 82S190 a2-o2 27S191 27s19 lw38510

    RSN 3306 H

    Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
    Text: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS


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    PDF 54S/74S RSN 3306 H ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor