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    TRANSISTOR K2845 Search Results

    TRANSISTOR K2845 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K2845 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K2845

    Abstract: transistor k2845 2SK2845
    Text: 2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSIII 2SK2845 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 8.0 Ω (typ.) High forward transfer admittance


    Original     		2SK2845 K2845 transistor k2845 2SK2845 PDF

    K2845

    Abstract: transistor k2845 2SK2845
    Text: 2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSIII 2SK2845 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance


    Original     		2SK2845 K2845 transistor k2845 2SK2845 PDF

    k2845

    Abstract: 2SK2845 Marking m.h
    Text: 2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2845 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.)


    Original     		2SK2845 k2845 2SK2845 Marking m.h PDF

    k2845

    Abstract: No abstract text available
    Text: 2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSIII 2SK2845 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance


    Original     		2SK2845 SC-64 k2845 PDF

    k2845

    Abstract: 2SK2845 transistor k2845
    Text: 2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSIII 2SK2845 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low leakage current : IDSS = 100 A (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		2SK2845 k2845 2SK2845 transistor k2845 PDF