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    TRANSISTOR K2718 Search Results

    TRANSISTOR K2718 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K2718 Datasheets Context Search

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    transistor k2718

    Abstract: K2718 transistor 2sk2718 2SK2718 2SK271
    Text: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2718 transistor k2718 K2718 transistor 2sk2718 2SK2718 2SK271

    k2718

    Abstract: transistor k2718 2SK2718 634 transistor
    Text: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2718 k2718 transistor k2718 2SK2718 634 transistor

    k2718

    Abstract: transistor k2718
    Text: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2718 k2718 transistor k2718

    k2718

    Abstract: transistor k2718 transistor 2sk2718 2sk2718
    Text: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2718 k2718 transistor k2718 transistor 2sk2718 2sk2718

    2SK2718

    Abstract: 634 transistor
    Text: TO SH IBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source UN Resistance : Rd S(ON) = 5.612 (Typ.)


    OCR Scan     		PDF 2SK2718 2SK2718 634 transistor

    SS100 TRANSISTOR

    Abstract: 2SK2718
    Text: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance : R ßS (0 N )“ 5 .6 0 (Typ.)


    OCR Scan     		PDF 2SK2718 SS-100/ SS100 TRANSISTOR 2SK2718

    k2718

    Abstract: transistor k2718
    Text: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A T IO N S DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2718 k2718 transistor k2718

    Untitled

    Abstract: No abstract text available
    Text: 2SK2718 TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 0 Í0 .3 : R d S ( 0N) = 5-6H (Typ.)


    OCR Scan     		PDF 2SK2718 100//A 20kil)

    2SK2718

    Abstract: transistor 2sk2718
    Text: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) • Low Leakage C urrent : lD gg = 100,6iA(Max.) (V]3 g = 720V)


    OCR Scan     		PDF 2SK2718 100//A 2SK2718 transistor 2sk2718