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    TRANSISTOR K 603 Search Results

    TRANSISTOR K 603 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 603 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BP317

    Abstract: MMBTA42 MMBTA92 254-D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN


    Original     		PDF M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8 BP317 MMBTA42 MMBTA92 254-D

    MMBTA92

    Abstract: BP317 MMBTA42
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA PIN


    Original     		PDF M3D088 MMBTA92 MMBTA42. MAM256 603506/01/pp8 MMBTA92 BP317 MMBTA42

    BP317

    Abstract: MMBT2222A PMBT2907A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).


    Original     		PDF M3D088 MMBT2222A PMBT2907A. MAM255 603506/01/pp8 BP317 MMBT2222A PMBT2907A

    MMBT3906 PHILIPS

    Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).


    Original     		PDF M3D088 MMBT3906 MMBT3904. MAM256 603506/01/pp8 MMBT3906 PHILIPS transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906

    marking code 10 sot23

    Abstract: BP317 MMBT3904 MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3904 NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).


    Original     		PDF M3D088 MMBT3904 MMBT3906. MAM255 603506/01/pp8 marking code 10 sot23 BP317 MMBT3904 MMBT3906

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).


    Original     		PDF M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8

    TRIAC BCR 16 km

    Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
    Text: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)


    Original     		PDF R07CS0003EJ0200 TRIAC BCR 16 km PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04

    R1RP0408D

    Abstract: R1RP0408DGE-2LR R1RP0408DGE-2PR
    Text: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		PDF R1RP0408D 512-kword REJ03C0112-0200 512-k 400-mil 36-pin R1RP0408DGE-2LR R1RP0408DGE-2PR

    1.4464

    Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S


    OCR Scan     		PDF 2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473

    od300

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2S C 5 2 8 9 is ideal fo r the final stag e am p lifie r in 1.9G H z-band digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G (Unit: mm)


    OCR Scan     		PDF 2SC5289 SC-61 2SC5289-T1 od300

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TO-3P (L)


    OCR Scan     		PDF 2SK3132

    JE 800 transistor

    Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
    Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )


    OCR Scan     		PDF uPA76HA JE 800 transistor upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s

    MT460

    Abstract: TI08 marking ti08 27ie fg m 004 26 01 3905g F0429 0429
    Text: S t • 2 /— K NEC m • Compound Transistor /V t 7L ï t GA1A4Z *m ft m W B 0 o L 7 X |j £ # t £ T ^ W Ì : mm) t < ( R i = 10 k Q ) OE t O G N 1A 4Z ^ >7° U / ]) T '£ t t ( fÊ * h ft* 5 Ë fê (Ta = 25 °C) II 3 u ? ^ x - l ^ . - < _ x ^ 'E G E


    OCR Scan     		PDF PWS10 SXISC06) MT460 TI08 marking ti08 27ie fg m 004 26 01 3905g F0429 0429

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO 40E LTD T B S a m J> DDDSIOG M ERHM 2SD1562A h 7 > y ^ ^ / T ransistors - :-T 23 3 - O 2SD1562Â cj 2 L \ £ $ * V 7 t f \ s - H & NPN V lJ - 1 > k 7 > V * $ i & Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor


    OCR Scan     		PDF 2SD1562A 2SD1562Ã 2SB1085A 70E0c

    3055e mos

    Abstract: TK3055E STK3055E 3055E stk3055 3055EN TK3055
    Text: SGS-THOMSON ir a u » K S S TK 3055E N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss R D S o n Id S TK3055E 60 V 0 .1 5 £1 13 A , „ „ , , , AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE


    OCR Scan     		PDF 3055E TK3055E OT-82 OT-194 STK3055E. STK3055E 3055e mos STK3055E stk3055 3055EN TK3055

    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


    OCR Scan     		PDF

    6DI50MA-050

    Abstract: TFR3M AR4J
    Text: D 6 I 5 M A - 5 5 a : Outline Drawings POWER TRANSISTOR MODULE • 4M : Features • f f i A h FE High D C Current Gain • K S W / f H i g h Speed Sw itching : Applications • if L f f l'O '*— $ General Purpose Inverter • Uninterruptible Power Supply


    OCR Scan     		PDF

    2sc5194-t1

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz


    OCR Scan     		PDF 2SC5194 2SC5194-T2 2sc5194-t1

    cl25C

    Abstract: 251C BC858B BC858BW SST6838 SST6839 T116
    Text: Transistors I SST6839 PNP General Purpose Transistor SST6839 • E x te r n a l dim ensions Units : m m •F e a tu r e s 1) B V ceo< — 4 0 V ( lc = — 1m A) SST6839 2 ) Complements the SST6838. 1 .9 + 0 .2 •P a c k a g e , marking, and packaging specifications


    OCR Scan     		PDF SST6839 SST6838. Ta-85t) 100mA 100MHz BC858BW BC858B. cl25C 251C BC858B SST6838 SST6839 T116

    f4316

    Abstract: F4319F MGF4319F
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		PDF F4310F F4316F F4319F f4316 F4319F MGF4319F

    2SC3739

    Abstract: 2SA1464 marking 1BW 1BW MARKING 1bws
    Text: SEC j m ^ T i x t n '> 1J =3 > Silicon T ran sisto r A 2SC3739 NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^/FEATUR ES ^ 0 / P A C K A G E DIMENSIONS Unit : mm O f f iJ U ? Æ (i b t i > ), • A 'i "/ - f > 7 , Í & J S ?£ W M t£ ¿ " ) i i & H 4 - 0


    OCR Scan     		PDF 2SA1464 2SC3739 marking 1BW 1BW MARKING 1bws

    FCK 111

    Abstract: SS5100 la 5531 TRANSISTOR BO 346 T108 T46C T-10803 SKs 22 TRANSISTOR marking EP
    Text: - y - ^ NEC M Com pound Transistor i ï r / v f x & GA1 F4N ^ - f ì & • m m o s < J T X 1& t j i $ : f t M L X ^ t i ' c (R i = 22 k£2, R2 = 47 kQ) c o G N 1 F 4 N t 3 > 7 ° IJ y > 9 'J X i t m T è & 1~c ( T a = 25 °C ) II Marking fê


    OCR Scan     		PDF

    cd 6283 cs

    Abstract: cd 6283 ic ic cd 6283 cd 6283 2SJ134 d 6283 ic IC tl 082 cn TEA-509 IC cd 6283 cs
    Text: MOS M O S Field Effect P o w e r Transistor p 2 S J1 3 4 i , P * -v MOS <? \\\ h (•- J : ó x * > t i t t / i ; <, w / ^ f « k, — MOS F E T x ï 4 / ^ v f-> 7 î v VET X , 5 V ^1),'^; I C > i i x t f , t+s• o M O CO * - ? . t v % 10.6 MAX. 10.0 , 0 3.6±0.2


    OCR Scan     		PDF 2SJ134 cd 6283 cs cd 6283 ic ic cd 6283 cd 6283 2SJ134 d 6283 ic IC tl 082 cn TEA-509 IC cd 6283 cs

    Mosfet T460

    Abstract: T460 mosfet c947 transistor transistor sb 772 C947 8028 ae 2SK2409 2SK240 tea 1020 SB 772
    Text: 7*— *$? • i s — h M O S * IM & * M O S f e t MOS Field Effect Transistor 2SK2409 N51-V ^ ; u /\0|7 -M O S F E T ^ 'f > y >7 X Ü Æ 2 S K 2 4 0 9 ÌN ^ * J U ÌÉ M m ° 7 -M O S F E T T , t * u, y o * =l x - * < 7 * > 4.5 ± 0.2 10.0 ± 0.3 # «


    OCR Scan     		PDF 2SK2409 N51-V IEI-620) MP-45F O-220) Mosfet T460 T460 mosfet c947 transistor transistor sb 772 C947 8028 ae 2SK2409 2SK240 tea 1020 SB 772