Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR JUS Search Results

    TRANSISTOR JUS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR JUS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CTA4100A

    Abstract: No abstract text available
    Text: Relays and Timers www.factorymation.com Digital Timers/Counters/Tachometers 6 1/1IN D Part Number Input Voltage Description CTA4000A 100–240VAC Output 1: Transistor/Relay comb. Output 2: Transistor CTA4000D 24VDC Output 1: Transistor/Relay comb. Output 2: Transistor


    Original     		PDF CTA4000A 240VAC CTA4000D 24VDC CTA4100A CTA4100D 12VDC 100mA CTA4100A

    high power FET transistor s-parameters

    Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
    Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .


    Original     		PDF ATP-1054, 5963-2025E 5966-0779E high power FET transistor s-parameters high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET

    high frequency transistor ga as fet

    Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
    Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .


    Original     		PDF ATP-1054, 5963-2025E 5966-0779E high frequency transistor ga as fet ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter

    power Junction FET advantages and disadvantages

    Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor


    Original     		PDF ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet

    MJE 15024

    Abstract: NE662M04 transistor T79 ghz NA 6884 7011 NPN TRANSISTOR 0411 02 027 000 T79 "NPN Transistor"
    Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm • Flat Lead Style for better RF performance


    Original     		PDF NE662M04 OT-343 NE662M04 6e-16 3e-15 4e-12 1e-12 MJE 15024 transistor T79 ghz NA 6884 7011 NPN TRANSISTOR 0411 02 027 000 T79 "NPN Transistor"

    MCT8 opto

    Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
    Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR


    OCR Scan     		PDF MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35

    BUX45

    Abstract: transistor et 460
    Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection


    OCR Scan     		PDF CB-19 BUX45 transistor et 460

    transistor BUX

    Abstract: BUX14 TR07
    Text: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection


    OCR Scan     		PDF BUX14 CB-19 transistor BUX BUX14 TR07

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    OCR Scan     		PDF OD300A40/6Q E76102 SQD300A 400/600V --A40 0Q02B06

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    PT 6062A

    Abstract: EL1202 1B2 zener diode 2SD1702 IEI-1213 MEI-1202 MF-1134 1702 NPN transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SD1702 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 17 02 is NPN silicon epitaxial darlington transistor designed for pulse m otor, printer driver, solenoid driver. FEATURES PACKAGE DIMENSIONS in millimeters


    OCR Scan     		PDF 2SD1702 2SD1702 PT 6062A EL1202 1B2 zener diode IEI-1213 MEI-1202 MF-1134 1702 NPN transistor

    iei-1209

    Abstract: PA1428 IC-6633 IEI-1213 MEI-1202 MF-1134 NEC RELAY DARLINGTON TRANSISTOR ARRAY
    Text: DATA SHEET SILICON TRANSISTOR ARRAY /¿PA1428 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The/xPA1428 is NPN silicon epitaxial D arlington Power T ransistor A rray th at b u ilt in Surge Absorber 4 circuits


    OCR Scan     		PDF uPA1428 The/xPA1428 PA1428H IEI-1209) iei-1209 PA1428 IC-6633 IEI-1213 MEI-1202 MF-1134 NEC RELAY DARLINGTON TRANSISTOR ARRAY

    transistor NEC D 588

    Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
    Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.


    OCR Scan     		PDF 2SC3356 2SC3356 transistor NEC D 588 IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflDSlSÎOilLiSiriRiOiDtgi 2 N 51 9 5 MEDIUM POWER PNP SILICON TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS • LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in JedecS O T-32 plastic package.


    OCR Scan     		PDF 2N5195

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC4570 2SC4570 SC-70) 4570-T PACK878

    IGT8D21

    Abstract: IGT8E21
    Text: csrifBAiMiiisro^ IGT8D21.E21 2CI AMPERES 400, 500 VOLTS EQUIV. FiDS ON = 0.145 i l Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		PDF IGT8D21 60Msec, IGT8E21

    transistor NEC D 582

    Abstract: AN 7591 POWER AMPLIFIER Nec b 616 an 7591
    Text: DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR D ES C R IP TIO N The 2SC3583 is an NPN epitaxial silicon transistor designed for use in PACKAGE DIMENSIONS low-noise and small signal amplifiers from VHF band to UHF band. Low-


    OCR Scan     		PDF 2SC3583 2SC3583 transistor NEC D 582 AN 7591 POWER AMPLIFIER Nec b 616 an 7591

    IGT6D21

    Abstract: IGT6E21
    Text: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high


    OCR Scan     		PDF IGT6D21 -f--10% IGT6E21

    IGT4E10

    Abstract: 4D10 VQE 22 VQE 12 IGT4D10
    Text: IGT4D10.E10 10 AMPERES 400,500 VOLTS EQUIV. Rd S ON =0.27 il Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power M O S F E T S and


    OCR Scan     		PDF IGT4D10 IGT4E10 4D10 VQE 22 VQE 12

    BLW95

    Abstract: SOT-121A IEC134 sot121a
    Text: N AMER PHILIPS/DISCRETE bTE » • bbS3T31 DOS'iSGb QbT ■ APX BLWyü H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB operated high power industrial and m ilita ry transm itting equipment in the h.f. band. The transistor presents excellent performance as a


    OCR Scan     		PDF bbS3T31 20-his BLW95 7z77903 BLW95 SOT-121A IEC134 sot121a

    550MH

    Abstract: IGT6D10 IGT6E10
    Text: Preliminary 26.4 4/85 IGT6D10,E10 c a r ' T R M u s T O i i 10 AMPERES 400,500 VOLTS EQUIV. FId S ON = 0.27 Í1 Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device


    OCR Scan     		PDF

    transistor tt 2222

    Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
    Text: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF 711002b BLY87C transistor tt 2222 Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060

    BLW 82

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF bb53T31 BLW 82

    BLV11

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbsa^ai □QañiD'i sqs BLV11 b^E IAPX JL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF OT-123. BLV11