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    TRANSISTOR J 201 Search Results

    TRANSISTOR J 201 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J 201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DSA0038067

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTD1530 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR. A N O FEATURES B Q K F ・Complementary to KTB2530. R G H I C J ・Recommended for 80W Audio Amplifier Output Stage. D MAXIMUM RATING Ta=25℃


    Original     		PDF KTB2530. KTD1530 DSA0038067

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    GL5672

    Abstract: No abstract text available
    Text: 1/2 GL5672 NPN LOW FREQUENCY TRANSISTOR Description The GL5672 is a low frequency transistor . Excellent DC current gain characteristics. Package Dimension REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0.60 0.80 0.25 0.35 REF. B J


    Original     		PDF GL5672 GL5672

    NTE74LS74A

    Abstract: NTE7483 NTE74LS76A NTE7475 NTE7472 NTE7473 NTE7474 NTE74C74 NTE74H73 NTE74LS73
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74H71 14-Lead DIP, See Diag. 247 AND Gated J-K Master/Slave Flip-Flop “ /Preset & Clear Q 14-Lead DIP, See Diag. 247 NTE7472, NTE74H72 AND Gated J-K Master/Slave Flip-Flop “ /Preset & Clear Vcc


    OCR Scan     		PDF NTE74H71 14-Lead NTE7472, NTE74H72 NTE7473, NTE74C73, NTE74H73, NTE74LS73 NTE74LS74A NTE7483 NTE74LS76A NTE7475 NTE7472 NTE7473 NTE7474 NTE74C74 NTE74H73 NTE74LS73

    NTE7474

    Abstract: NTE74LS76A NTE7483 NTE74LS74A NTE74LS83A full adder NTE7476 NTE74LS75 NTE74S74 NTE74LS77
    Text: INTEGRATED CIR CU ITS- TTL TRANSISTOR TRANSISTOR LOGIC NTE74H71 14-Lead DIP, See Diag. 247 AND Gated J-K Master/Slave Flip-Flop “ /Preset & Clear NTE7472, 14-Lead DIP, See Diag. 247 NTE74H72 AND Gated J -K Master/Slave Flip-Flop “ /Preset & Clear Q Vcc


    OCR Scan     		PDF NTE74H71 14-Lead NTE7472, NTE74H72 NTE7473, NTE74C73, NTE74H73, NTE74LS73 NTE7474 NTE74LS76A NTE7483 NTE74LS74A NTE74LS83A full adder NTE7476 NTE74LS75 NTE74S74 NTE74LS77

    NTE74123

    Abstract: NTE74HC123 NTE74121 NTE74HC125 NTE74LS113 NTE74LS114 NTE74LS122 Q204 NTE74120 NTE74LS112A
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 16-Lead DIP, See Diag. 249


    OCR Scan     		PDF NTE74110 14-LeadDIP, NTE74111 16-LeadDIP, NTE74LS112A, NTE74S112 16-Lead NTE74LS113, NTE74S113 14-Lead NTE74123 NTE74HC123 NTE74121 NTE74HC125 NTE74LS113 NTE74LS114 NTE74LS122 Q204 NTE74120 NTE74LS112A

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIR CU ITS- TTL TRANSISTOR TRANSISTOR LOGIC NTE74H71 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop “ /Preset & Clear NTE7472, 14-Lead DIP, See Diag. 247 NTE74H72 AND Gated J -K Master/Slave Flip-Flop “ /Preset & Clear 0 Vcc


    OCR Scan     		PDF NTE74H71 14-Lead NTE7472, NTE74H72 NTE7474, NTE74C74, NTE74H74, NTE74LS74A,

    NTE7411

    Abstract: NTE74LS123 NTE74LS113 NTE74123 nte74s124 NTE74121 NTE74LS11 TRANSISTOR D 1266 NTE74HC125 NTE74120
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 1K r i 1 CLR § 3 1Q | ¡3


    OCR Scan     		PDF NTE74110 14-Lead NTE74111 16-Lead NTE74LS112A, NTE74S112 NTE74LS113, NTE74S113 NTE7411 NTE74LS123 NTE74LS113 NTE74123 nte74s124 NTE74121 NTE74LS11 TRANSISTOR D 1266 NTE74HC125 NTE74120

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 1K r i §3 1 PR Q 1 CLR Vc c


    OCR Scan     		PDF NTE74110 14-Lead NTE74111 16-Lead NTE74LS113, NTE74S113 NTE74LS112A, NTE74S112

    TCST2103

    Abstract: temic tcst TCST2202 transistor 010C tcst1103 transistor j 201
    Text: Temic Semiconductors Optical Sensors Reflective Optical Sensors with Transistor Output j Package Part Number _|_ | IReflective Optical Sensors CTR @ IF Ic mA % >0.3 > 1.5 1 ««A Characteristics ;V<8SJC8Q @ 1 tnA V V£#jgt @ % «odlc V j mA j mA CNY70 A TCRT1000b>


    OCR Scan     		PDF CNY70 TCRT1000b> TCRT5000 TCST1103 TCST2103 TCST1202 TCST2202 TCST2300 TCST1000 JCST2000 TCST2103 temic tcst TCST2202 transistor 010C transistor j 201

    AN406/0591

    Abstract: TEA2019 TEA2018A
    Text: SGS-THOMSON J T E A 2019 CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT • DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR ' ■ POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A ■ CURRENT LIMITATION ■ TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­


    OCR Scan     		PDF TEA2019 TEA2019fa-cilitates TEA2019 47CpF 15kHz 155VRMS 250Vrms AN406/0591 TEA2018A

    MDB Resistor

    Abstract: 2N1224 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
    Text: MIL-S-195QO/189B 18 January 1972 SUPERSEDING \/TTT —C - l O R n n / I Ö QA 1T11U U X * J \ J \ J \ J lU V iTl 26 A pril 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 in is specification is m andatory for use by all D epart­


    OCR Scan     		PDF MIL-S-19500/189B 2N1224 2N1225 MDB Resistor 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B

    transistor BFR91

    Abstract: BFR91 transistor CR NPN BFR91 philips
    Text: Philips Semiconductors Product specification '- P NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE J> PIN 7 711002b PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial amplifiers, radar systems,


    OCR Scan     		PDF ON4186) BFQ23. 31-I7 BFR91 BFR91 DQ457Dfl transistor BFR91 transistor CR NPN BFR91 philips

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors bb53T31 0055155 757 H A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor DESCRIPTION Product specification b7E J> c BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use In RP wideband amplifiers and


    OCR Scan     		PDF bb53T31 BFR92 BFT92. bbS3131 00B5157 bS3T31 -------------BFR92

    2N4211

    Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
    Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629


    OCR Scan     		PDF f\15i5TDR 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 2N3598 2N4211 TO63 2N3599 2N3772

    TO63

    Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
    Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629


    OCR Scan     		PDF f\15i5TDR 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 2N3598 TO63 2N3599 2N3772

    2SD2011

    Abstract: 3PAA
    Text: Is ~ P s $ /Transistors 's 7, 2SD2011 x t°$ * > 2SD 2011 npn v V =i > h 7 > y * £ Epitaxial Planar NPN Silicon Transistor Darlington Ji>j£fi;ftig|liffl/l-o w Freq. Power Amp. • • 1) 9 — V> >t£$7cT h F E 2) ? > / ' > • - ? ' ( ' * - K F *J *L


    OCR Scan     		PDF 2SD2011 2SD2011 3PAA

    NTE74HC393

    Abstract: NTE74LS393 NTE74393 NTE74LS386 NTE74HC390 o2-a2 NTE74LS390 NTE74S387 NTE74HC377 Dual D-type flip-flop
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74376 16-Lead D IP, See Diag. 249 Quadruple J-K Flip-Flop 20-Lead DIP, See Diag. 294 NTE74HC377, NTE74LS377 Octal D-Type Flip-Flop w/Common Enable W/Ck>ck & Single Rail Outputs Enable G u NTE74LS378


    OCR Scan     		PDF NTE74376 16-Lead 20-Lead NTE74HC377, NTE74LS377 NTE74LS378 NTE74LS379 NTE74LS386 NTE74HC393 NTE74LS393 NTE74393 NTE74HC390 o2-a2 NTE74LS390 NTE74S387 NTE74HC377 Dual D-type flip-flop

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó


    OCR Scan     		PDF QM200HC-M VCO200V

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS - DTL SERIES DIODE TRANSISTOR LOGIC NTE9093, 14-Lead DIP, See Diag. 247 NTE9094 Dual J -K Flip-Flop (Power Drain = 28/34mA Max) NTE9097, 14-Lead DIP, See Diag. 247 NTE9099 Dual J -K Flip-Flop (Power Drain = 34/28mA Max) NTE9135 Hex Inverter


    OCR Scan     		PDF NTE9093, 14-Lead NTE9094 28/34mA NTE9097, NTE9099 34/28mA NTE9135 NTE9157,

    acrian RF POWER TRANSISTOR

    Abstract: Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc
    Text: 0 1 8 2 9 9 8 ACRI'AN. INC h, Hü Æ& GENERAL T? SPI ÜP D E ;| 0 1 0 2 ^ 0 ^!jjj|jjjgjgg 0DD1403 4 J ^0 |j|ijj|jUp*^ 2003 D E S C R IP T IO N The 2003 is a common base transistor capable of providing 3 Watts of C W RF output power in the 1000-2000 MHz. This hermetically sealed transistor is specifically designed for


    OCR Scan     		PDF 0DD1403 Vcb-28V Ic-100mA Tf-25Â acrian RF POWER TRANSISTOR Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc

    Untitled

    Abstract: No abstract text available
    Text: r z j SGs m o M s o N TEA2019 CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A CURRENT LIMITATION TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­


    OCR Scan     		PDF TEA2019 TEA2019 BYT11-800 15kHz 155Vr 7T2T237

    Untitled

    Abstract: No abstract text available
    Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband


    OCR Scan     		PDF BFG135 OT223

    transistor P1P

    Abstract: BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p
    Text: m P hilips S em iconductors bbS3T31 N AMER DD2S1S2 757 H I A P X PHILIPS/DISCRETE _ . ._. Product specifigatjon b7E J> NPN 5 GHz wideband transistor £ BFR92 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily Intended for use in RF wideband amplifiers and


    OCR Scan     		PDF bbS3T31 BFR92 BFT92. transistor P1P BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p