MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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LIMITING INRUSH CURRENT npn
Abstract: No abstract text available
Text: LP395 LP395 Ultra Reliable Power Transistor Literature Number: SNOSBF3B LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from
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LP395
LP395
LIMITING INRUSH CURRENT npn
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Untitled
Abstract: No abstract text available
Text: MAPL-000978-0075LF MAPL-000978-0075LN M/A-COM Products Released, 23 Jun 09 LDMOS Pulsed Power Transistor 75W, 978 MHz, 400µs Pulse, 1% Duty Product Image Features • • • • • Gold LDMOS microwave power transistor Common source configuration Broadband Class AB operation
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MAPL-000978-0075LF
MAPL-000978-0075LN
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DB978
Abstract: No abstract text available
Text: MAPL-000978-0075LF MAPL-000978-0075LN LDMOS Pulsed Power Transistor 75W, 978 MHz, 400µs Pulse, 1% Duty M/A-COM Products Released, 23 Jun 09 Product Image Features • • • • • Gold LDMOS microwave power transistor Common source configuration Broadband Class AB operation
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MAPL-000978-0075LF
MAPL-000978-0075LN
DB978
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Untitled
Abstract: No abstract text available
Text: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily
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2N499
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rf amplifier marking catalog
Abstract: No abstract text available
Text: Philips Semiconductors; MZ0912B50Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MZ0912B50Y; NPN microwave power transistor General Description Blockdiagram
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MZ0912B50Y;
MZ0912B50Y
01-Jul-98)
rework/mz0912b50y
rf amplifier marking catalog
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All similar transistor
Abstract: transistor marking AM philips transistor marking
Text: Philips Semiconductors; MX1011B200Y; Microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX1011B200Y; Microwave power transistor General Description Blockdiagram Products & packages
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MX1011B200Y;
MX1011B200Y
01-Jul-98)
rework/mx1011b200y
All similar transistor
transistor marking AM
philips transistor marking
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rf amplifier marking catalog
Abstract: No abstract text available
Text: Philips Semiconductors; MX0912B351Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX0912B351Y; NPN microwave power transistor General Description Blockdiagram
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MX0912B351Y;
MX0912B351Y
01-Jul-98)
rework/mx0912b351y
rf amplifier marking catalog
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Philips top MARKING CODE
Abstract: No abstract text available
Text: Philips Semiconductors; MX1011B700Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX1011B700Y; NPN microwave power transistor General Description Blockdiagram
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MX1011B700Y;
MX1011B700Y
01-Jul-98)
rework/mx1011b700y
Philips top MARKING CODE
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Untitled
Abstract: No abstract text available
Text: High Speed Transistor Couplers Single/Dual Channel 8 Pin DIP Part M ih* m •m /im *. rM R im <52. 9 ImA 6N135 6N136 ICPL4502 Single channel Transistor Output 7 High C.M.R. 1 kv/tis. min 19 ICPL2533 Dual Channel Transistor Output «» F tm ■HT» f W M ilM M t a iilii .
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6N135
6N136
ICPL4502
ICPL2530
ICPL2531
ICPL2533
6N137
ICPL2601
ICPL2611
ICPL2630
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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mc3356p
Abstract: motorola transistor array 14 pin dip
Text: g MOTOROLA — General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. GENERAL PURPOSE TRANSISTOR ARRAY
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MC3346
MC3346
mc3356p
motorola transistor array 14 pin dip
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Transistor C G 774 6-1
Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers
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BFR96
Transistor C G 774 6-1
C G 774 6-1
transistor a 1941
a/Transistor C G 774 6-1
RLF100-11/12/Transistor C G 774 6-1
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2SK1198
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor
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2SK1198
2SK1198
1988M
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2sj460
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SJ460
2SJ460
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2SJ460
Abstract: MEI-1202 X10679E
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98 .2 DATA SHEET D EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION
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2SJ460
2SJ460
MEI-1202
X10679E
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Untitled
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SK2541
2SK2541
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C10535* MANUAL NEC
Abstract: 2SJ461 C10535E MEI-1202
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SJ461
2SJ461
C10535* MANUAL NEC
C10535E
MEI-1202
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2SJ460
Abstract: MEI-1202
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SJ460
2SJ460
MEI-1202
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2SK2541
Abstract: MEI-1202 MF-1134 NEC reliability 1995
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SK2541
2SK2541
25ndustrial
MEI-1202
MF-1134
NEC reliability 1995
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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SQD65BB75
Abstract: sqd65B
Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.
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SQP65BB75
SQD65BB75
00DEE22
SQD65BB75
sqd65B
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR M O D U L E S - IS O L A T E D T Y P E SQD50ABKX) SQD50AB is a high speed, high power Darlington transistor designed for use in Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo=I000V, 5 2 ± 0 .3 6mir>. 6min,
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SQD50ABKX)
SQD50AB
I000V,
SQD50AB100
DD0222D
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