transistor SD335
Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen
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Si-npn-Planar-EpitaxieSC116
Si-npn-Planar-EpitaxieSC117
Si-npn-Planar-EpitaxieSC118
Si-npn-Planar-EpitaxieSC119
Si-npn-Planar-EpitaxieSC236
Si-npn-Planar-EpitaxieSC237
Si-npn-Planar-EpitaxieSC238
VorSC239
Si-pnp-Planar-EpitaxieSC307
Si-pnp-Planar-EpitaxieSC308
transistor SD335
SF126
SF127
SF128
SD337
sd336
SF137
BF241 TRANSISTOR
SD349
SD339
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Halbleiterbauelemente DDR
Abstract: elektronik DDR Leistungsdiode Halbleiter-Bauelemente DDR Hallgenerator CSSR silizium diode
Text: Tunneldiode HF-Transistor Diode Kapazitätsdiode NF-Transistor NF-Leistungstransistor Ptot >1W Bauelement 2.Element Hall-Feldsonde CSSR: Silizium Hall-Generator CSSR: Galliumarsenidphosphid HF-Leistungstransistor Hall-Generator DDR: MIS-Transistor strahlungsempfindliches
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221A49
Abstract: MGP7N60E OP77
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGP7N60E/D DATA - DesignerkTM Data Sheet w Insulated Gate Bipoflar Transistor N-Channel Enhancement-Mode MGP7N60E Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination
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MGP7N60E/D
MGP7N60E
Oti21,
24W609
221A49
MGP7N60E
OP77
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2N6718
Abstract: IC350 2N6718L
Text: UNISONIC TECHNOLOGIES CO., LTD. 2N6718 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES 1 *High Power: 850mW *High Current: 1A
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2N6718
2N6718
850mW
O-126C
2N6718L
2N6718-T6C-A-K
2N6718L-T6C-A-K
O-126C
QW-R217-007
IC350
2N6718L
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Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon Power lan iransistors High Voltage Video Output Transistor D40N The D40N is a silicone plastic encapsulated power transistor for TV video
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D40N1
D40N3
04ON6
D40N2
D40N4
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2SC5752
Abstract: 2SC5752-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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2SC5752
2SC5752-T1
2SC5752
2SC5752-T1
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nec japan 7812
Abstract: NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
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2SC5750
2SC5750-T1
nec japan 7812
NEC 7812
transistor NEC 7812
7812 nec
2SC5750
2SC5750-T1
7812 4pin
R54 Transistor
k 3531 transistor
TRANSISTOR IC 18751
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ne678m04-a
Abstract: 2SC5753
Text: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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NE678M04
2SC5753
NE678M04-A
2SC5753-A
NE678M04-T2-A
2SC5753-T2-A
P15659EJ1V0DS
2SC5753
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p1565
Abstract: 2SC5751
Text: NPN SILICON RF TRANSISTOR NE677M04 / 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
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NE677M04
2SC5751
NE677M04-A
2SC5751-A
NE677M04-T2-A
2SC5751-T2-A
P15657EJ1V0DS
p1565
2SC5751
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2SC5753
Abstract: nec k 813 2SC5753-T2 p1565 RF transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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2SC5753
2SC5753-T2
2SC5753
nec k 813
2SC5753-T2
p1565
RF transistor
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Untitled
Abstract: No abstract text available
Text: , Unc. RF POWER TRANSISTOR 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHP band mobile radio
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2SC1946A
2SC1946A
i10dB
175MHr
175MHz,
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nec 14305
Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
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2SC5751
2SC5751-T2
nec 14305
14305 NEC
k 3918 TRANSISTOR
OF IC 7909
2SC5751-T2
2SC5751
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2SC5753
Abstract: NE678M04 NE678M04-T2-A S21E IC pt 2262 ic nec 2051
Text: NEC's MEDIUM POWER NPN NE678M04 SILICON HIGH FREQUENCY TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 2.0±0.1 R55 1 NEC's NE678M04 is fabricated using NEC's HFT3 wafer
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NE678M04
NE678M04
2SC5753
NE678M04-T2-A
S21E
IC pt 2262
ic nec 2051
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HFT150-28
Abstract: ASI10616
Text: HFT150-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI HFT150-28 is Designed for .112x45° L A FEATURES: Ø.125 NOM. FULL R C • PG = 16 dB min. at 150 W/30 MHz • IMD3 = -28 dBc max. at 150 W PEP • Omnigold Metalization System
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HFT150-28
HFT150-28
112x45°
ASI10616
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transistor bf 198
Abstract: BF 212 transistor BF198 TFK 214 TFK 544
Text: BF 198 Silizium-NPN-Planar HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: G eregelte FS-ZF-Verstärkerstufen in Em itterschaltung Applications: C ontrolled video IF am p lifier stages in com m on em itter configuration Besondere Merkmale: Features:
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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BUK627-400A
Abstract: BUK627-400B ha 431 transistor transistor 431 N
Text: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.
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BUK627-400A
BUK627-400B
BUK627
-400A
-400B
ha 431 transistor
transistor 431 N
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Untitled
Abstract: No abstract text available
Text: iiA ì A SH E ir. SILICON TRANSISTOR 2SA1400-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION 2SA1400-Z is desig ned fo r High V oltag e S w itch in g , especia lly P A C K A G E DIMENSIONS in m illim e te rs } in H ybrid Integrated Circuits. FEATU RES
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2SA1400-Z
2SA1400-Z
2SC3588-Z
lEt-1209)
Bas00
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ES403
Abstract: t60404
Text: MITSUBISHI TRANSISTOR MODULES | QM100DY-2HK i HIGH POWER SWITCHING USE \ INSULATED TYPE ! - . I «. n QM100DY-2HK • • • • • lc Collector current. 100A
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QM100DY-2HK
E80276
E80271
ES403
t60404
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QM10
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM100HY-2H • to • V cex • hFE Collector current.100A Collector-emitter voltage. 1000V DC current gain. 75
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QM100HY-2H
E80276
E80271
Tj-25
QM10
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IGBT 1MBH60-100
Abstract: J9100
Text: 1MBH60-100 ^ ± IG B T IGBT INSULATED GATE BIPOLAR TRANSISTOR • : Outline Drawings bkü : Features •H i â X ' • i& ü ü in liS • Hi gh Speed Switching Low Saturation Voltage Hfti/tCMOS-ir— MUie • :y High Impedance Gate Small Package 0. 6 * ■ ffliÊ : Applications
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1MBH60-100
l95t/RB9
IGBT 1MBH60-100
J9100
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SLA4061
Abstract: sla6023 equivalent SLA4030 SLA4010 SLA4060 SLA4031 SLA6022 sla*4030 SLA6012 SLA4313
Text: • Transistor Arrays SLA ÊqutvaType No. VctO to (top) iv i ! 'f hFt- 60 ±10 4 6! 2000 SLA4030 100 4 :6. 2uuu SLA4031 120 4;6 2000 SLA4041 200 36. 1000 SLA4060 120 5 '8 2000 SLA4061 120 5 8 2000 SLA4070 -100 -5 -8. 2000 SLA4071 -100 -5-8, 2000 o 4 6 80
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SLA4010
SLA4030
SLA4031
SLA4041
SLA4060
SLA4061
SLA4070
SLA4071
SLA4310
SLA4313
sla6023 equivalent
SLA6022
sla*4030
SLA6012
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