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    TRANSISTOR FOR RF AMPLIFIER Search Results

    TRANSISTOR FOR RF AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FOR RF AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4703-T1

    Abstract: NE46234 2SC4703 2SC470-3
    Text: NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage


    Original     		PDF NE46234 2SC4703 2SC4703 OT-89) dBV/75 PU10339EJ01V1DS 2SC4703-T1 2SC470-3

    NEC 2501

    Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features


    Original     		PDF 2SC4536 2SC4536 OT-89) PU10338EJ01V0DS NEC 2501 2SC4536-T1 ic nec 2501 2501 NEC nec RF package SOT89 qs marking sot-89

    2SC4093

    Abstract: 2SC4093-T1 R26 transistor R27 transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4093 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.


    Original     		PDF 2SC4093 2SC4093 S21e2 2SC4093-T1 R26 transistor R27 transistor

    nec 2501

    Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .


    Original     		PDF 2SC4703 2SC4703 OT-89) PU10339EJ01V1DS nec 2501 ic nec 2501 nec RF package SOT89 2501 NEC 2SC4703-T1 2SC470-3

    ic nec 2501

    Abstract: nec 2501 2501 NEC 2SC4703-T1 2SC4703 2SC470-3 nec RF package SOT89
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .


    Original     		PDF 2SC4703 2SC4703 OT-89) PU10339EJ01V0DS ic nec 2501 nec 2501 2501 NEC 2SC4703-T1 2SC470-3 nec RF package SOT89

    JLN 2003

    Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
    Text: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.


    Original     		PDF 2SC4226 R09DS0022EJ0200 2SC4226 S21e2 2SC4226-A 2SC4226-T1 JLN 2003 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR

    2SC5602

    Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA


    Original     		PDF 2SC5602 S21e2 2SC5602-T1 2SC5602 2SC5602-T1 nec 8725 marking TW NEC 2561

    marking R33

    Abstract: 2SC4227 2SC4227-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


    Original     		PDF 2SC4227 2SC4227 S21e2 2SC4227-T1 marking R33 2SC4227-T1

    2SC4226

    Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


    Original     		PDF 2SC4226 2SC4226 S21e2 2SC4226-T1 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p

    2SC4228

    Abstract: 2SC4228-T1 TRANSISTOR R44
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


    Original     		PDF 2SC4228 2SC4228 S21e2 2SC4228-T1 2SC4228-T1 TRANSISTOR R44

    MARKING CODE 16 transistor sot23

    Abstract: RF TRANSISTOR ic 556 datasheet pdf for ic 556 CMPTH81
    Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D


    Original     		PDF CMPTH81 OT-23 100MHz 20-February MARKING CODE 16 transistor sot23 RF TRANSISTOR ic 556 datasheet pdf for ic 556 CMPTH81

    MARKING CODE 16 transistor sot23

    Abstract: CMPTH81 MARKING 16 transistor sot23 RF POWER TRANSISTOR 100MHz
    Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code: C3D.


    Original     		PDF CMPTH81 OT-23 100MHz 16-October MARKING CODE 16 transistor sot23 CMPTH81 MARKING 16 transistor sot23 RF POWER TRANSISTOR 100MHz

    transistor 2sc3355 and application

    Abstract: transistor 2sc3355 and application NOTICE 2SC3355 2SC3355, npn 2SC3355-T PA33
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.


    Original     		PDF 2SC3355 2SC3355 2SC3355-T PU10208EJ01V0DS transistor 2sc3355 and application transistor 2sc3355 and application NOTICE 2SC3355, npn 2SC3355-T PA33

    sot-23 MARKING CODE 3d

    Abstract: marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor
    Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code is 3D.


    Original     		PDF CMPTH81 OT-23 100MHz 26-August sot-23 MARKING CODE 3d marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor

    2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    Abstract: 2.4 ghz transmitter rf test
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR


    Original     		PDF MRF16006 MRF16006 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz transmitter rf test

    BFX60

    Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
    Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier


    OCR Scan     		PDF BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier

    k 319

    Abstract: Q62702-F272 A 798 transistor transistor H 802 BFS55
    Text: BFS55 NPN Transistor for RF applications up to the GHz range BFS 55 is a NPN silicon RF transistor in a case 18 A 4 DIN 41 876 TO -72 . The terminals are electrically insulated from the case. The transistor is especially designed for use in RF applications up into the GHz range, e.g.,antenna amplifiers and radar


    OCR Scan     		PDF BFS55 BFS55 62702-F272 p21e--+ k 319 Q62702-F272 A 798 transistor transistor H 802

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D


    OCR Scan     		PDF CMPTH81 OT-23 20-February OT-23

    3SK132

    Abstract: 3SK132A si2494 g2sc ETEL
    Text: MOS FIELD EFFECT TRANSISTOR 3SK132A RF AM P. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Suitable for use as RF amplifier in UHF TV tuner. RF Amp. for half wave length resonator : X/2


    OCR Scan     		PDF 3SK132A 3SK132 3SK132A si2494 g2sc ETEL

    Untitled

    Abstract: No abstract text available
    Text: Central“ CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D


    OCR Scan     		PDF CMPTH81 1001OV, 100MHz 20-February OT-23 OT-23

    inductor vk200

    Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
    Text: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.


    OCR Scan     		PDF MRF238 inductor vk200 VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer

    si diode 1N4007

    Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON


    OCR Scan     		PDF MRF6414 MRF6414PHT/D MRF6414 MRF8414 si diode 1N4007 MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout

    j 6815 transistor

    Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .


    OCR Scan     		PDF RD00HVS1 175MHz RD00HVS1 175MHz 48MAX OT-89 j 6815 transistor TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor

    transistor 1971 mitsubishi

    Abstract: MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26th/Feb.J02 RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		PDF RD01MUS1 520MHz RD01MUS1 520MHz 0-48MAX OT-89 25deg TIO750 transistor 1971 mitsubishi MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994