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    TRANSISTOR F8 Search Results

    TRANSISTOR F8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.


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    PDF RN1907FS RN1909FS RN1907FS, RN1908FS, RN2907FS RN2909FS RN1908Fesented

    RN1908FS

    Abstract: RN1907FS RN1909FS RN2907FS RN2909FS f7 transistor transistor -25 f7
    Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.


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    PDF RN1907FS RN1909FS RN1907FS, RN1908FS, RN1908FS RN1907FS RN1908FS RN1909FS RN2907FS RN2909FS f7 transistor transistor -25 f7

    301 marking code PNP transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BF824 PNP medium frequency transistor Product specification Supersedes data of 1997 Jul 08 1999 Apr 15 Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING


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    PDF M3D088 BF824 MAM256 SCA63 115002/00/03/pp8 301 marking code PNP transistor

    301 marking code PNP transistor

    Abstract: BF824W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D102 BF824W PNP medium frequency transistor Product specification Supersedes data of 1997 Jul 07 1999 Apr 15 Philips Semiconductors Product specification PNP medium frequency transistor BF824W FEATURES PINNING


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    PDF M3D102 BF824W OT323 MAM048 SCA63 115002/00/03/pp8 301 marking code PNP transistor BF824W

    CBVK741B019

    Abstract: F63TNR F852 FDT439N PN2222A 63a30
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


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    PDF FDT439N CBVK741B019 F63TNR F852 FDT439N PN2222A 63a30

    F852 transistor

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


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    PDF FDT439N F852 transistor

    MARKING CODE f8 sot23

    Abstract: BF824 data sheet BF824
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF824 PNP medium frequency transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING • Low current max. 25 mA


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    PDF BF824 MAM256 SCA76 R75/04/pp6 MARKING CODE f8 sot23 BF824 data sheet BF824

    BF824

    Abstract: MARKING CODE f8 sot23 BF824 NXP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF824 PNP medium frequency transistor Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824 FEATURES PINNING • Low current max. 25 mA


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    PDF BF824 MAM256 R75/04/pp6 BF824 MARKING CODE f8 sot23 BF824 NXP

    RN1907FS

    Abstract: RN1908FS RN1909FS RN2907FS RN2909FS
    Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more


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    PDF RN1907FS RN1909FS RN1907FS, RN1908FS, RN1908FS RN1907FS RN2907FS RN2909FS RN1908FS RN1909FS RN2909FS

    Untitled

    Abstract: No abstract text available
    Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS,RN1908FS,RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enable the manufacture of ever more


    Original
    PDF RN1907FS RN1909FS RN1908FS RN1908FS RN1907FS RN2907FS RN2909FS

    Untitled

    Abstract: No abstract text available
    Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more


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    PDF RN1907FS RN1909FS RN1907FS, RN1908FS, RN1908FS RN1907FS RN2907FS RN2909FS

    TRANSISTOR a4

    Abstract: BF824W
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D102 BF824W PNP medium frequency transistor Product data sheet Supersedes data of 1997 Jul 07 1999 Apr 15 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824W PINNING FEATURES • Low current max. 25 mA


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    PDF M3D102 BF824W OT323 MAM048 115002/00/03/pp6 TRANSISTOR a4 BF824W

    BF824W

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BF824W PNP medium frequency transistor Product data sheet Supersedes data of 1997 Jul 07 1999 Apr 15 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824W FEATURES PINNING • Low current max. 25 mA


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    PDF M3D102 BF824W OT323 MAM048 115002/00/03/pp6 BF824W

    PBLS2003D

    Abstract: MARKING SMD PNP TRANSISTOR F8
    Text: PBLS2003D 20 V PNP BISS loadswitch Rev. 01 — 24 June 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)


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    PDF PBLS2003D OT457 SC-74) PBLS2003D MARKING SMD PNP TRANSISTOR F8

    TRANSISTOR a4

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF824 PNP medium frequency transistor Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824 PINNING FEATURES • Low current max. 25 mA PIN • Low voltage (max. 30 V).


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    PDF BF824 MAM256 R75/04/pp6 TRANSISTOR a4

    Untitled

    Abstract: No abstract text available
    Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


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    PDF NDS9933A

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    BF824W

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BF824W PNP medium frequency transistor Product specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 15 PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium frequency transistor BF824W FEATURES


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    PDF BF824W BF824W F824W MAM048 115002/00/03/pp8

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    DM54S189

    Abstract: No abstract text available
    Text: DM74S289 National Semiconductor DM74S289 64-Bit 16x4 Open-Collector RAM TRI-STATE( RAM General Description These 64-bit active-element memories are monolithic Schottky-clamped transistor-transistor logic (TTL) arrays or­ ganized as 16 words of 4 bits each. They are fully decoded


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    PDF DM74S289 DM74S289 64-Bit 64-bit DM74S /9603-S DM54S189

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ±0 05 (1.4 mm x 0,8 mm x 0.59 mm: TYP.) 0.8 ± 0.1 • Contains same chip as 2SC5195


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    PDF 2SC5195