Untitled
Abstract: No abstract text available
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN1907FS
RN1909FS
RN1907FS,
RN1908FS,
RN2907FS
RN2909FS
RN1908Fesented
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RN1908FS
Abstract: RN1907FS RN1909FS RN2907FS RN2909FS f7 transistor transistor -25 f7
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN1907FS
RN1909FS
RN1907FS,
RN1908FS,
RN1908FS
RN1907FS
RN1908FS
RN1909FS
RN2907FS
RN2909FS
f7 transistor
transistor -25 f7
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301 marking code PNP transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BF824 PNP medium frequency transistor Product specification Supersedes data of 1997 Jul 08 1999 Apr 15 Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING
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M3D088
BF824
MAM256
SCA63
115002/00/03/pp8
301 marking code PNP transistor
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301 marking code PNP transistor
Abstract: BF824W
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D102 BF824W PNP medium frequency transistor Product specification Supersedes data of 1997 Jul 07 1999 Apr 15 Philips Semiconductors Product specification PNP medium frequency transistor BF824W FEATURES PINNING
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M3D102
BF824W
OT323
MAM048
SCA63
115002/00/03/pp8
301 marking code PNP transistor
BF824W
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CBVK741B019
Abstract: F63TNR F852 FDT439N PN2222A 63a30
Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high
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FDT439N
CBVK741B019
F63TNR
F852
FDT439N
PN2222A
63a30
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F852 transistor
Abstract: No abstract text available
Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high
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FDT439N
F852 transistor
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MARKING CODE f8 sot23
Abstract: BF824 data sheet BF824
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF824 PNP medium frequency transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING • Low current max. 25 mA
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BF824
MAM256
SCA76
R75/04/pp6
MARKING CODE f8 sot23
BF824 data sheet
BF824
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BF824
Abstract: MARKING CODE f8 sot23 BF824 NXP
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF824 PNP medium frequency transistor Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824 FEATURES PINNING • Low current max. 25 mA
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BF824
MAM256
R75/04/pp6
BF824
MARKING CODE f8 sot23
BF824 NXP
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RN1907FS
Abstract: RN1908FS RN1909FS RN2907FS RN2909FS
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN1907FS
RN1909FS
RN1907FS,
RN1908FS,
RN1908FS
RN1907FS
RN2907FS
RN2909FS
RN1908FS
RN1909FS
RN2909FS
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Untitled
Abstract: No abstract text available
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS,RN1908FS,RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enable the manufacture of ever more
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RN1907FS
RN1909FS
RN1908FS
RN1908FS
RN1907FS
RN2907FS
RN2909FS
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Untitled
Abstract: No abstract text available
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN1907FS
RN1909FS
RN1907FS,
RN1908FS,
RN1908FS
RN1907FS
RN2907FS
RN2909FS
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TRANSISTOR a4
Abstract: BF824W
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D102 BF824W PNP medium frequency transistor Product data sheet Supersedes data of 1997 Jul 07 1999 Apr 15 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824W PINNING FEATURES • Low current max. 25 mA
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M3D102
BF824W
OT323
MAM048
115002/00/03/pp6
TRANSISTOR a4
BF824W
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BF824W
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BF824W PNP medium frequency transistor Product data sheet Supersedes data of 1997 Jul 07 1999 Apr 15 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824W FEATURES PINNING • Low current max. 25 mA
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M3D102
BF824W
OT323
MAM048
115002/00/03/pp6
BF824W
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PBLS2003D
Abstract: MARKING SMD PNP TRANSISTOR F8
Text: PBLS2003D 20 V PNP BISS loadswitch Rev. 01 — 24 June 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
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PBLS2003D
OT457
SC-74)
PBLS2003D
MARKING SMD PNP TRANSISTOR F8
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TRANSISTOR a4
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF824 PNP medium frequency transistor Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824 PINNING FEATURES • Low current max. 25 mA PIN • Low voltage (max. 30 V).
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BF824
MAM256
R75/04/pp6
TRANSISTOR a4
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Untitled
Abstract: No abstract text available
Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior
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NDS9933A
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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BF824W
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BF824W PNP medium frequency transistor Product specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 15 PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium frequency transistor BF824W FEATURES
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BF824W
BF824W
F824W
MAM048
115002/00/03/pp8
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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DM54S189
Abstract: No abstract text available
Text: DM74S289 National Semiconductor DM74S289 64-Bit 16x4 Open-Collector RAM TRI-STATE( RAM General Description These 64-bit active-element memories are monolithic Schottky-clamped transistor-transistor logic (TTL) arrays or ganized as 16 words of 4 bits each. They are fully decoded
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DM74S289
DM74S289
64-Bit
64-bit
DM74S
/9603-S
DM54S189
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ±0 05 (1.4 mm x 0,8 mm x 0.59 mm: TYP.) 0.8 ± 0.1 • Contains same chip as 2SC5195
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2SC5195
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