Untitled
Abstract: No abstract text available
Text: i., Ona. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5945 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD FEATURES: 45"_s -, I C Era • Common Emitter • PG = 9.0 dB at 2.0 W/470 MHz
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2N5945
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KT 805
Abstract: Wideband RF Chokes 1 microhenry rfc ERA-1SM ERA-6SM ERA-3SM ERA-5SM ADCH-80 ADCH-80A ERA-21SM
Text: BIASING MMIC AMPLIFIERS e.g., ERA SERIES (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which
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AN-60-010)
AN-60-010
M120106
AN60010
KT 805
Wideband RF Chokes
1 microhenry rfc
ERA-1SM
ERA-6SM
ERA-3SM
ERA-5SM
ADCH-80
ADCH-80A
ERA-21SM
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8uk453
Abstract: BUK453-60A BUK453-60B T0220AB
Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110fi2b
BUK453-60A/B
T0220AB
BUK453
8uk453
BUK453-60A
BUK453-60B
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Untitled
Abstract: No abstract text available
Text: ¿57 SGS-THOMSON ¡m era « STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STHV102 STHV102FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4.2 A 2.6 A • TYPICAL RDS(on) = 3.1 Q. . ■ . . . . AVALANCHE RUGGED TECHNOLOGY
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STHV102
STHV102FI
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Untitled
Abstract: No abstract text available
Text: ¿57 SGS-THOMSON ¡m era « STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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STP30N06
STP30N06FI
TP30N06FI
STP30N06/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: STP5N30 STP5N30FI V dss RDS on 300 V 300 V E D ED TYP E STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR A A ¿57 SGS-THOMSON ¡m era « Id 5 A 3.5 A . TYPICAL RDs(on) = 1.2 Q . . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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STP5N30
STP5N30FI
30/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E STP30N05 S TP30N05FI SGS-THOMSON ¡m era « STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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STP30N05
TP30N05FI
STP30N05FI
STP30N05/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 SGS-THOMSON ¡m era « STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP2N60 STP2N60FI V dss RDS on Id 600 V 600 V < 3 .5 Q. < 3 .5 Q. 2.9 A 2.2 A • TYPICAL RDS(on) = 3.2 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED
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STP2N60
STP2N60FI
V60/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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MTP3N60
MTP3N60FI
MTP3N60/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: Mkcm m an A M P com pany Radar Pulsed Power Transistor, 40W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-40M V2.00 Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p era tio n
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150ns
PH1214-40M
PH1214-40M
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Untitled
Abstract: No abstract text available
Text: jt f K m W an A M P com pany Radar Pulsed Power Transistor, 25W, 100|is Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-25M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p era tio n
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PH2729-25M
TT90M50AGROUND
ATC100A
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Untitled
Abstract: No abstract text available
Text: INFRARED LED + PHOTO TRANSISTOR TLP816 TLP816 M OTOR ROTATION AND IRIS DETECTION FOR C A M ERA TRACK DETECTION OF M ICRO FLO PPY DISK DRIVE • • • • Very small package High resolution : Slit width 0.4mm Detection gap : 1mm Directly mountable on PCB using the stand off of lead
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TLP816
TLP816)
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2N7000
Abstract: 2N7000/2N7000
Text: G en era l S e m ic o n d u c t o r * 2N7000 DMOS Transistor N-Channel DMOS Transistors v Features_ _ • High input impedance • Low gate threshold voltage • Low drain-source ON-resistance • High-speed switching • No minority carrier storage time
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2N7000
20K/box
20K/box
2N7000
2N7000/2N7000
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY
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STP20N
TP20N10LFI
STP20N10L
STP20N10LFI
ISOWATT220
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2SC2522
Abstract: 15D transistor 2SC2522A R2213 2C2523 2sa1073 2SC25 10ICI
Text: FUJITSU MICROEL ECT RONICS 31E D B 374=^2 DOlbSlfl 3 S F M I r - 22-13 E f t . r . S F : PRODUCT PROFILE " U H T i C U 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION T he 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN gen era l purpose, high pow er
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r-22-13
2SC2522,
2C2522A,
2C2523
2SC2522/2SC2522A/2SC2523
2SC2522/2SC25
/2SC2523
300lis;
2SC2522A
T-33-13
2SC2522
15D transistor
R2213
2C2523
2sa1073
2SC25
10ICI
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Untitled
Abstract: No abstract text available
Text: PD -91736 International I R Rectifier IRG4RC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • S ho rt C ircuit Rated U ltraFast: O ptim ize d for high o p era ting fre q u e n cie s >5.0 kHz , and S hort
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IRG4RC10KD
-252A
ratio233
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IQR fu 220 n
Abstract: No abstract text available
Text: PD - 91735 International löR R e ctifi 0 P IRG4RC10K PRELIMINARY Short Circuit Rated UitraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ho rt C ircu it Rated U itraFast: O ptim ized fo r high o p era ting fre q u e n cie s >5.0 kH z , and S ho rt C ircuit
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IRG4RC10K
-252A
O-252AA
IQR fu 220 n
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Untitled
Abstract: No abstract text available
Text: ßrtkCOM w a n A M P com pany C\N Power Transistor, 14W 2.3 GHz PH2323-14 Features • • • • • • • • NPN Silicon M icrow ave Pow er T ransistor C o m m o n Base C on figuration Class C O p era tio n Interdigitated G eo m etry G o ld M etalization System
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PH2323-14
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2N5090
Abstract: ta7146 equivalent transistor n 4212 RCA-2N5090 RCA TO60 TRANSISTORS 3431J 9ZSS-3620R2 RCA 813
Text: File No. 270 □ U C B Z 7D ^ Pow er T r a n s is to rs Solid State Division 2N5090 High-Power S ilico n N-P-N O verlay Transistor High-Gain T y p e f o r Class A , B, or C Op era tion in V H F / U H F C irc u its Features: • M axim um safe-area-of-operation curve
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2N5090
RCA-2N5090*
92CS-I80I9
2N5090
ta7146
equivalent transistor n 4212
RCA-2N5090
RCA TO60 TRANSISTORS
3431J
9ZSS-3620R2
RCA 813
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ E 20155* 9 Watts, 610-960 MHz UHF Power Transistor Description T he 20 15 5 is a class C, NPN , com m o n base RF po w e r tra n sisto r intended fo r 28 V d c op era tion from 610 to 960 M Hz. Rated at 9 w a tts m inimum output power, it m ay be used for both C W and PEP applications.
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capacitor 60uF
Abstract: 260pf capacitor uf28100v UF28100 ER 35 e transformer
Text: A f a COM W an A M P c o m p a n y RF MOSFET Power Transistor, 100W, 28V 100-500 MHz UF28100V V2.00 Features triT • N -Channel E n h an cem en t M ode D evice • DM OS Structure • Low er C ap acitan ces for B roadb an d O p era tio n • High Saturated O u tp u t Pow er
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UF28100V
Uf28100V
capacitor 60uF
260pf capacitor
UF28100
ER 35 e transformer
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20179 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription T he 2017 9 is a cla ss A, NPN, com m o n em itter RF po w e r tra n sisto r intended fo r 25 V d c o p era tion from 1.8 to 2.0 G Hz. Rated at 0.4 w a tt m inimum output power, it m ay be used for both C W and PEP applications.
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20009 2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription T he 20 00 9 is a cla ss AB, NPN, com m o n em itter RF po w e r tra n sisto r intended fo r 24 V dc op era tion acro ss th e 935 to 960 M H z fre q u e n cy band. Rated at 2.5 W atts m inim um ou tput pow er, it m ay be used fo r
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20011 20 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor D escription T he 20011 is a cla ss A, NPN, com m o n e m itter U H F po w e r tra n sisto r intended fo r 26.5 V d c o p era tion from 470 to 860 M Hz. It is rated at 20 w a tts p-sync o u tp u t power, and m ay be used fo r both C W and PEP
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