Untitled
Abstract: No abstract text available
Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application
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KSC5603D
O-220
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150a gto
Abstract: QS 100 NPN Transistor 200H KSC5603D
Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application
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KSC5603D
O-220
150a gto
QS 100 NPN Transistor
200H
KSC5603D
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j5304d
Abstract: transistor j5304d j5304 FJD5304DTM J530 FJD5304D FJD5304DTF fjd5304
Text: FJD5304D High Voltage Fast Switching Transistor FJD5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit
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FJD5304D
FJD5304D
j5304d
transistor j5304d
j5304
FJD5304DTM
J530
FJD5304DTF
fjd5304
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j5304d
Abstract: J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list FJU5304D transistor j5304d
Text: FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit
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FJU5304D
FJU5304D
j5304d
J5304
J530
FJU5304DTU
free transistor and ic equivalent data o
Transistor AND DIODE Equivalent list
transistor j5304d
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Untitled
Abstract: No abstract text available
Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit
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FJP9100
O-220
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FJP9100
Abstract: NPN Transistor 600V TO-220
Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit
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FJP9100
O-220
FJP9100
NPN Transistor 600V TO-220
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J9100
Abstract: No abstract text available
Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit
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FJP9100
O-220
FJP9100
O-220-3
FJP9100TU
J9100
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Untitled
Abstract: No abstract text available
Text: 699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features • Built-in Resistor at Base-Emitter: R1 Typ. = 2000Ω • Built-in Resistor at Base: RB(Typ.) = 700±100Ω Equivalent Circuit C B RB 1 1.Base R1 TO-220
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O-220
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Untitled
Abstract: No abstract text available
Text: 699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features • Built-in Resistor at Base-Emitter: R1 Typ. = 2000Ω • Built-in Resistor at Base: RB(Typ.) = 700±100Ω Equivalent Circuit C B RB 1 1.Base R1 TO-220
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O-220
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Untitled
Abstract: No abstract text available
Text: FJV3110R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit • Built-in Bias Resistor R = 10 kΩ • Complement to FJV4110R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit
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FJV3110R
FJV4110R
OT-23
FJV3110RMTF
OT-23
FJV3110R
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Untitled
Abstract: No abstract text available
Text: FJV3115R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 2.2 kΩ, R2 = 10 kΩ Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit
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FJV3115R
OT-23
FJV3115RMTF
OT-23
FJV3115R
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Untitled
Abstract: No abstract text available
Text: FJV3115R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 2.2 kΩ, R2 = 10 kΩ Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit
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FJV3115R
OT-23
FJV3115RMTF
OT-23
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Untitled
Abstract: No abstract text available
Text: FJN4309R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R = 4.7 kΩ • Complement to FJN3309R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit
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FJN4309R
FJN3309R
FJN4309RTA
R4309
FJN4309R
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Untitled
Abstract: No abstract text available
Text: FJN4309R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R = 4.7 kΩ • Complement to FJN3309R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit
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FJN4309R
FJN3309R
FJN4309RTA
R4309
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BDX53 equivalent
Abstract: bdx53c equivalent bdx54c equivalent BDX53 BDX54 equivalent BDX53B BDX53A BDX53C BDX54 BDX54A
Text: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applications • Power Liner and Switching Applications Features • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit
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BDX53/A/B/C
BDX54,
BDX54A,
BDX54B
BDX54C
O-220
BDX53
BDX53A
BDX53B
BDX53C
BDX53 equivalent
bdx53c equivalent
bdx54c equivalent
BDX53
BDX54 equivalent
BDX53B
BDX53A
BDX53C
BDX54
BDX54A
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BDX53 equivalent
Abstract: bdx53c equivalent
Text: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • • Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Features • • Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit
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BDX53/A/B/C
BDX54,
BDX54A,
BDX54B
BDX54C
O-220
BDX53
BDX53A
BDX53B
BDX53C
BDX53 equivalent
bdx53c equivalent
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TIP127
Abstract: TIP127 circuit TIP126 TIP125 TIP127 equivalent tip127 darlington equivalent of TIP125 tip127 fairchild complementary darlington TIP126 circuit
Text: TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP120/121/122 Equivalent Circuit C B TO-220 1 R1 1.Base 2.Collector Absolute Maximum Ratings* Symbol VCBO VCEO 3.Emitter R1 @ 8kW
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TIP125/TIP126/TIP127
TIP120/121/122
O-220
TIP125
TIP126
TIP127
TIP125/TIP126/TIP127
TIP127
TIP127 circuit
TIP126
TIP125
TIP127 equivalent
tip127 darlington
equivalent of TIP125
tip127 fairchild
complementary darlington
TIP126 circuit
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FJY3009R
Abstract: FJY4009R
Text: FJY3009R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY4009R Equivalent Circuit C C S09 E B E B SOT - 523F Absolute Maximum Ratings *
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FJY3009R
FJY4009R
FJY3009R
FJY4009R
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FJY3011R
Abstract: FJY4011R
Text: FJY3011R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=22KΩ • Complement to FJY4011R Equivalent Circuit C C S11 E B E B SOT - 523F Absolute Maximum Ratings *
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FJY3011R
FJY4011R
FJY3011R
FJY4011R
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TIP147
Abstract: tip147 transistor TIP146 tip146 equivalent tip145 equivalent tip147 fairchild tip147 equivalent equivalent transistor 1970 tip142 equivalent ASME-14
Text: TIP145/TIP146/TIP147 PNP Epitaxial Silicon Darlington Transistor • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. Industrial Use Complement to TIP140/141/142 Equivalent Circuit
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TIP145/TIP146/TIP147
TIP140/141/142
TIP145
TIP146
TIP147
TIP145/TIP146/TIP147
TIP147
tip147 transistor
TIP146
tip146 equivalent
tip145 equivalent
tip147 fairchild
tip147 equivalent
equivalent transistor 1970
tip142 equivalent
ASME-14
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J5502
Abstract: KSC5502TU KSC5502 transistor npn 12V 1A Collector Current NPN Transistor 600V TO-220 vbe 12v, vce 600v NPN Transistor
Text: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • Small Variance in Storage Time • Wide Safe Operating Area • Suitable for Electronic Ballast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *
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KSC5502
O-220
KSC5502
J5502
KSC5502TU
transistor npn 12V 1A Collector Current
NPN Transistor 600V TO-220
vbe 12v, vce 600v NPN Transistor
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495220
Abstract: linear application
Text: 495220 NPN Epitaxial Silicon Darlington Transistor High Voltage & Medium Power Linear Application Equivalent Circuit C B TO-220 Marking : 495220 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings * Symbol TC=25°C unless otherwise noted Parameter Value
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O-220
495220
linear application
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Untitled
Abstract: No abstract text available
Text: KSC5502D / KSC5502DT NPN Triple Diffused Planar Silicon Transistor • • • • • • 4 D-PAK Features Equivalent Circuit High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application
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KSC5502D
KSC5502DT
O-220
KSC5502DTM
C5502D
O-252
KSC5502DTTU
O-220
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j5304d
Abstract: transistor j5304d j5304
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor Features • • • • • Equivalent Circuit High-Voltage, High-Speed Power Switch Applications Wide Safe Operating Area Built-in Free-Wheeling diode Suitable for Electronic Ballast Applications Small Variance in Storage Time
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FJE5304D
O-126
J5304D
O-126
FJE5304DTU
j5304d
transistor j5304d
j5304
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