TF135
Abstract: bf308
Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
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FPNH10
TF135
bf308
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Untitled
Abstract: No abstract text available
Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
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FPNH10
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Untitled
Abstract: No abstract text available
Text: Data sheet AS1374 200mA, Ultra-Low-Noise, High-PSRR, Dual Low Dropout Regulators 1 General Description 2 Key Features The AS1374 is a ultra-low-noise, low-dropout linear regulator with two seperated outputs. Specifically designed to deliver 200mA continuous output current at each output pin. The LDOs can achieve a
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AS1374
200mA,
AS1374
200mA
120mV
com/LDOs/AS1374
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y-parameter
Abstract: common base amplifier circuit designing FPNH10 TRANSISTOR C 3223
Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
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FPNH10
y-parameter
common base amplifier circuit designing
FPNH10
TRANSISTOR C 3223
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NPN rf transistor
Abstract: FPNH10
Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
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FPNH10
NPN rf transistor
FPNH10
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rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH11
PN2222N
Q100
Z-235
D3000
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CBVK741B019
Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
CBVK741B019
F63TNR
MMBTH11
PN2222N
Q100
Z-235
transistor 26
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MPSH10 fairchild transistor
Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
MPSH10
OT-23
MPSH10 fairchild transistor
MMBTH10 Spice Model
transistor top mark 3E L
transistor bel 100
CBVK741B019
F63TNR
MMBTH10
PN2222N
TRANSISTOR C 3223
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CBVK741B019
Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
MPSH10
OT-23
CBVK741B019
F63TNR
MMBTH10
PN2222N
PAP transistor power high frequency
transistor bel 100
rf transistor mark code H1
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MPSH10 s parameters
Abstract: No abstract text available
Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
MPSH10
OT-23
MPSH10 s parameters
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A 103 TRANSISTOR pinout
Abstract: J-STD-020D
Text: Datasheet AS1374 200mA, Ultra-Low-Noise, High-PSRR, Dual Low Dropout Regulators 1 General Description 2 Key Features The AS1374 is a ultra-low-noise, low-dropout linear regulator with two seperated outputs. Specifically designed to deliver 200mA continuous output current at each output pin. The LDOs can achieve a low 120mV dropout for
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AS1374
200mA,
AS1374
200mA
120mV
A 103 TRANSISTOR pinout
J-STD-020D
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J-STD-020D
Abstract: No abstract text available
Text: Data sheet AS1374 200mA, Ultra-Low-Noise, High-PSRR, Dual Low Dropout Regulators 1 General Description 2 Key Features The AS1374 is a ultra-low-noise, low-dropout linear regulator with two seperated outputs. Specifically designed to deliver 200mA continuous output current at each output pin. The LDOs can achieve a low 120mV dropout for
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AS1374
200mA,
AS1374
100Hz
100kHz
120mV
200mA
com/LDOs/AS1374
J-STD-020D
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AS1359
Abstract: AS1358 J-STD-020D TSOT23
Text: Datasheet AS1358/AS1359 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators 1 General Description 2 Key Features The AS1358/AS1359 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve
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AS1358/AS1359
150mA/300mA,
100Hz
100kHz
140mV
300mA
AS1358/AS1359
150/300mA
140mV
AS1359
AS1358
J-STD-020D
TSOT23
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MAT03-903H
Abstract: "Dual PNP Transistor" MAT03-903L GDFP1-F10 "PNP Transistor" Dual PNP Transistor MAT03 903h
Text: Tuesday, Feb 26, 2008 3:48 PM / Low noise, matched, dual PNP transistor MAT03 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.
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MAT03
MIL-PRF-38535
com/MAT03
ASD0011414
MAT03-903H
"Dual PNP Transistor"
MAT03-903L
GDFP1-F10
"PNP Transistor"
Dual PNP Transistor
MAT03
903h
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Untitled
Abstract: No abstract text available
Text: Datasheet AS1361/AS1362 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators, with POK 2 Key Features 1 General Description The AS1361/AS1362 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve
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AS1361/AS1362
150mA/300mA,
AS1361/AS1362
150/300mA
140mV
300mA
100Hz
100kHz
140mV
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AS1361
Abstract: AS1362 J-STD-020D TSOT23
Text: Datasheet AS1361/AS1362 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators, with POK 1 General Description 2 Key Features The AS1361/AS1362 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve
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AS1361/AS1362
150mA/300mA,
140mV
300mA
100Hz
100kHz
AS1361/AS1362
150/300mA
140mV
AS1361
AS1362
J-STD-020D
TSOT23
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6943-3
Abstract: No abstract text available
Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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OT343
CFH800
Rn/50
6943-3
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transistor Zo 105
Abstract: 6943-3 55086 HEMT marking P 05973
Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz
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OT343
CFH800
OT343
D-130
Rn/50
transistor Zo 105
6943-3
55086
HEMT marking P
05973
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BFR740L3RH
Abstract: BFR705L3RH AN077
Text: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Extremly small and flat leadless package, 3 height 0.32 mm, ideal for modules 1 2 • Provides outstanding performance for wireless applications up to 10 GHz • Ideal for WLAN applications,
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BFR740L3RH
BFR740L3RH
BFR705L3RH
AN077
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BFR106
Abstract: Low Noise R.F AN077 BCW66
Text: BFR106 NPN Silicon RF Transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 2 3 @ 900MHz,8V,70mA 1 • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage
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BFR106
22dBm
31dBm
900MHz
BFR106
Low Noise R.F
AN077
BCW66
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Untitled
Abstract: No abstract text available
Text: BFP450 Linear Low Noise Silicon Bipolar RF Transistor Datasheet Revision 1.2, 2013-07-29 RF & Protection Devices Edition 2013-07-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP450
OT343
OT343-PO
OT343-FP
BFP450:
OT323-TP
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MAT02-903H
Abstract: MAT02-913H MAT02 mat-02
Text: Friday, Mar 7, 2008 9:07 AM / Low-noise, matched dual monolithic transistor MAT02 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.
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MAT02
MIL-PRF-38535
com/MAT02
ASD0011413
MAT02-903H
MAT02-913H
MAT02
mat-02
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Untitled
Abstract: No abstract text available
Text: Thursday, May 8, 2008 3:43 PM / Low-noise, matched dual monolithic transistor MAT02 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.
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MAT02
MIL-PRF-38535
com/MAT02
10mAd
ASD0011413
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Untitled
Abstract: No abstract text available
Text: Datasheet AS1374 D u a l 2 0 0 m A , L o w - N o i s e , H i g h - P S RR , L o w D r o p o u t R e g u l a t o r s 2 Key Features 1 General Description The AS1374 is a low-noise, low-dropout linear regulator with two separated outputs. Designed to deliver 200mA continuous output
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AS1374
AS1374
200mA
120mV
com/LDOs/AS1374
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