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    TRANSISTOR CAY Search Results

    TRANSISTOR CAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT 5388 BGA

    Abstract: Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511
    Text: IDT Product Selector Guide Accelerated Thinking SM Table of Contents Integrated Processors Flow-Control Management Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13


    Original     		PDF 12-03/DS/DL/BAY/10K CORP-PSG-00123 MT 5388 BGA Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC

    15Y SMD TRANSISTOR

    Abstract: SSM2044 free transistor equivalent book 2sc DAC02 PMI SSM-2045 1V120 1N9148 ssm2100 sharp laser diodes SSM2142 SPICE MODEL
    Text: SUMER 13555 BISHOP'S COURT BROOKFIELD, WI. 53005 414/784-6641 ~""-"- IPMI SSM AUDIO PRODUCTS AUDIO HANDBOOK VOLUMEl TABLE OF CONTENTS Precision Monolithics Inc. Introduction . 4


    Original     		PDF SSM-2013 15Y SMD TRANSISTOR SSM2044 free transistor equivalent book 2sc DAC02 PMI SSM-2045 1V120 1N9148 ssm2100 sharp laser diodes SSM2142 SPICE MODEL

    ISL9008

    Abstract: No abstract text available
    Text: ISL9008 Datasheet April 27, 2006 FN9235.0 Low Noise LDO with Low IQ, High PSRR Features ISL9008 is a high performance single low noise, high PSRR LDO that delivers a continuous 150mA of load current. It has a low standby current and is stable with 1 F of MLCC output


    Original     		PDF ISL9008 FN9235 ISL9008 150mA 45VRMS.

    ISL9008IEMZ

    Abstract: MARKING VO MARKING CAW CAY transistor sd caw sc70-5 ISL9008 "MARKING VO"
    Text: ISL9008 NS DESIG W E N PART F OR NDED ACEM ENT E M M L ECO RE P Datasheet NO T R MENDED 08A M O ISL90 REC March 11, 2008 FN9235.1 Low Noise LDO with Low IQ and High PSRR Features ISL9008 is a high performance single low noise, high PSRR LDO that delivers a continuous 150mA of load current. It has


    Original     		PDF ISL9008 ISL90 FN9235 ISL9008 150mA 5M-1994. MO-203AA. ISL9008IEMZ MARKING VO MARKING CAW CAY transistor sd caw sc70-5 "MARKING VO"

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


    Original     		PDF element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943

    papers

    Abstract: conference system hyundai panel 10 Ronics Ronics Technology springer TOSHIBA flash memory yoshikawa national semiconductor "flash memory" ATM machine
    Text: NVSMW 2000 General Chairman Mike Fliesler Advanced Micro Devices, USA Technical Chairman Financial Chairman Arthur Wang Krishna Parat Hyundai Microelectronics, USA Intel, USA Workshop Administrators Tonya Johnson Hyundai Microelectronics, USA Sunday, February 13 ‘2000


    Original     		PDF 9-11AM, 30-2PM 30-10PM, 30-12PM, 12noon-2PM papers conference system hyundai panel 10 Ronics Ronics Technology springer TOSHIBA flash memory yoshikawa national semiconductor "flash memory" ATM machine

    smd transistor at cay

    Abstract: transistor smd marking cay AS2533 AS253x AN3010 AS2535U-ZSO-U CI AS2534B AS2533-36 AS2534 diode smd marking code M12
    Text: austriamicrosystems Multi-Standard CMOS Telephone IC for Basic Telephones AS2533-36 DATA SHEET General Description - The AS253x is a CMOS integrated circuit that contains all the functions needed to build a high performance electronic telephone set with basic features.


    Original     		PDF AS2533-36 AS253x smd transistor at cay transistor smd marking cay AS2533 AN3010 AS2535U-ZSO-U CI AS2534B AS2533-36 AS2534 diode smd marking code M12

    transistor b722

    Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


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    equivalent transistor TT 3034

    Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF

    B861 transistor

    Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
    Text: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR

    transistor cay

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES 30E 2Y Q M \ / E 3Y - H j MEDIUM POWER SWITCHING USE INSULATED TYPE 3 ! QM30E2Y/E3Y-H • lc • V cex • Hfe Collector current. 30A j Collector-emitter voltage. 600V DC current gain. 75


    OCR Scan     		PDF QM30E2Y/E3Y-H E80276 E8Q271 transistor cay

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    MTD3055E

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F bf l E T> • b3h72SM 00^0535 330 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor D PAK for Surface or Insertion Mount


    OCR Scan     		PDF b3h72SM MTD3055E DGT654G MTD3055E

    MTP10N10E

    Abstract: 221A-06 AN569
    Text: MOTOROLA O rder this docum ent by M TP10N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N10E TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T his ad van ced “E” series o f T M O S po w e r M O SFETs is desig ned


    OCR Scan     		PDF MTP10N10E/D 21A-06 MTP10N10E 221A-06 AN569

    TP12N

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TP12N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP12N10E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high


    OCR Scan     		PDF TP12N10E/D TP12N10E 21A-06 O-220AB MTP12N10E/D TP12N

    transistor cay

    Abstract: No abstract text available
    Text: 8368602 SOL ITRON D E V I C E S 0 o litr o n IN C ^ D E ^ a3bflbDa Devices, Inc. £ dp C Cù&£i cay rvGc • S P E C I F I C A T I O N S 3^-/3 y 5 *5s * y A £ yy NO.: SB J8 ! . TYPE: HP/S StUóé* C ASE: M A X IM U M R A T IN G S 4 TO-3 SS" V Voltage, Collector to Emitter V C£^


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    sanyo S.E. 60 WF capacitors

    Abstract: B 773 transistor 1N581B transistor power MOSFET MAX7721 MAX770-MAX773 MAX770 MAX771 MAX772 MAX773
    Text: A M X I A I IVH S V or Adjustable, High-Efficiency, Low I q, Step-Up DC-DC Controllers These ICs use tiny external com ponents. Their high switching frequencies up to 300kHz allow surfacemount magnetics of 5mm height and 9mm diameter. The MAX770/MAX771/MAX772 accept input voltages


    OCR Scan     		PDF MAX770-MAX773 110nA 300kHz) MAX770/MAX771/MAX772 MAX770P MAX773 sanyo S.E. 60 WF capacitors B 773 transistor 1N581B transistor power MOSFET MAX7721 MAX770 MAX771 MAX772 MAX773

    motor winding formula

    Abstract: 3770 pbl
    Text: November 1997 ERICSSON ^ PBL 3770A High Performance Stepper Motor Drive Circuit Description Key Features PBL 3770A is a bipolar monolithic circuit intended to control and drive the current in one winding of a stepper motor. It is a high power version of PBL 3717 and special


    OCR Scan     		PDF 1522-PBL 3770/6Uen. S-164 3770AN 3770AQN motor winding formula 3770 pbl

    Untitled

    Abstract: No abstract text available
    Text: A HIGH-DENSITY DUAL-POLYSILICON 5 VOLT-ONLY EEPROM CELL R. Lambertson, A. Malazgirt, C. Lo, A. Vahidimowlavi, P. Holland, M. Fliesler, H. Gee Xicor Inc, 851 Buckeye Court, Milpitas, California, 95035 ABSTRACT In this paper a novel full-function EEPROM cell


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    LM IR 2110 amplifier

    Abstract: SSM2110 ssm pmi RMS-to-DC Converter TRUE RMS-TO-DC CONVERTER
    Text: SSM-2110 PMÎ> P re c is io n M m i o l ì i h i i s TRUERMS-TO-DC CONVERTER • FEATURES GENERAL DESCRIPTION * Multiple Output Options Absolute Value, RMS, Log RMS, Log Absolute Value, Average Absolute Value * Wide Dynamic R ange. 100dB


    OCR Scan     		PDF SSM-2110 100dB SSM-2110 FIGURE11: SSM-2013 SSM-2134 OP-215 LM IR 2110 amplifier SSM2110 ssm pmi RMS-to-DC Converter TRUE RMS-TO-DC CONVERTER

    1490P

    Abstract: transistor cay tuned amplifier
    Text: g MOTOROLA RF/IF/Audio Amplifier The MC1490 is an integrated circuit featuring wide-range AGO for use in RF/IF amplifiers and audio amplifiers over the temperature range, -4 0 " to +85’ C. • High Power Gain: 50 dB Typ at 10 MHz 45 dB Typ at 60 MHz 35 dB Typ at 100 MHz


    OCR Scan     		PDF MC1490 MC1350D MC1490P 1490P transistor cay tuned amplifier

    S9266

    Abstract: No abstract text available
    Text: 3DE D • TTSTEB? DD22Q7D b S C S -T H O M S O N s 6 s - thomson T '- S Z - W Z S L6217 STEPPER MOTOR DRIVER ■ ■ ■ ■ ■ MICROSTEPPING BIPOLAR OUTPUT CURRENT UP TO 400 mA LOW SATURATION VOLTAGE BUILT-IN FAST RECOVERY DIODES OUTPUT CURRENT DIGITALLY PROGRAM­


    OCR Scan     		PDF DD22Q7D L6217 S-1066^ 005507b L6217 ffit-31 S9266

    2063M

    Abstract: No abstract text available
    Text: 3QE » Hi 7^2^237 00220760 S G S-TH0MS0N S G S -T H O M S O N • _ E L ie ¥ G M Q g S _ I L 6 2 1 7 A STEPPER MOTOR DRIVER Th e power section of the device is a dual H-Bridge drive with internal clamp diodes for current circula­ tion. To maintain the degree of accuracy required


    OCR Scan     		PDF L6217A L6217A L6217Ai 2063M