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    TRANSISTOR C535 Search Results

    TRANSISTOR C535 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C535 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5356

    Abstract: No abstract text available
    Text: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) •


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    PDF 2SC5356 2SC5356

    Untitled

    Abstract: No abstract text available
    Text: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) •


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    PDF 2SC5356

    Untitled

    Abstract: No abstract text available
    Text: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) •


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    PDF 2SC5356

    Untitled

    Abstract: No abstract text available
    Text: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) •


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    PDF 2SC5356

    2SC5356

    Abstract: No abstract text available
    Text: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) •


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    PDF 2SC5356 2SC5356

    Untitled

    Abstract: No abstract text available
    Text: 2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5356 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tf = 0.5 s (max) (IC = 1.2 A) •


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    PDF 2SC5356

    TRANSISTOR c5353

    Abstract: C5353 Transistor c5353 application c5353 data sheet c5353 2SC5353 c-5353 Toshiba C5353 2SC5353 equivalent
    Text: 2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 s (max), tf = 0.5 μs (max) •


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    PDF 2SC5353 TRANSISTOR c5353 C5353 Transistor c5353 application c5353 data sheet c5353 2SC5353 c-5353 Toshiba C5353 2SC5353 equivalent

    TRANSISTOR c5353

    Abstract: C5353 Transistor c5353 data sheet c5353 2SC5353 c-5353 IC1000-1 2SC5353 datasheet transistor 2sc5353 ic c5353
    Text: 2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5353 Switching Regulator and High Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs (max), tf = 0.5 µs (max)


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    PDF 2SC5353 TRANSISTOR c5353 C5353 Transistor c5353 data sheet c5353 2SC5353 c-5353 IC1000-1 2SC5353 datasheet transistor 2sc5353 ic c5353

    TRANSISTOR c5353

    Abstract: c5353 C5353 Transistor application c5353 ic c5353 *C5353 toshiba
    Text: 2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5353 Switching Regulator and High Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs (max), tf = 0.5 µs (max)


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    PDF 2SC5353 SC-67 2-10R1A TRANSISTOR c5353 c5353 C5353 Transistor application c5353 ic c5353 *C5353 toshiba

    TRANSISTOR c5353

    Abstract: c5353 Transistor C5353
    Text: 2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5353 Switching Regulator and High Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs (max), tf = 0.5 µs (max)


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    PDF 2SC5353 TRANSISTOR c5353 c5353 Transistor C5353

    C5352

    Abstract: C5352 Transistor TRANSISTOR c5352 2SC5352 128Tc
    Text: 2SC5352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 4 A)


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    PDF 2SC5352 C5352 C5352 Transistor TRANSISTOR c5352 2SC5352 128Tc

    C5352

    Abstract: C5352 Transistor 2sc5352
    Text: 2SC5352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 4 A)


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    PDF 2SC5352 C5352 C5352 Transistor 2sc5352

    C5352

    Abstract: C5352 Transistor TRANSISTOR c5352
    Text: 2SC5352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 4 A)


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    PDF 2SC5352 2-16C1A C5352 C5352 Transistor TRANSISTOR c5352

    Untitled

    Abstract: No abstract text available
    Text: 2SC5354 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 s max • High breakdown voltage: VCEO = 800 V


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    PDF 2SC5354

    C5354 Transistor

    Abstract: No abstract text available
    Text: 2SC5354 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 s max • High breakdown voltage: VCEO = 800 V


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    PDF 2SC5354 C5354 Transistor

    c5354

    Abstract: C5354 Transistor 2SC5354 toshiba marking code transistor *c5354
    Text: 2SC5354 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 s max • High breakdown voltage: VCEO = 800 V


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    PDF 2SC5354 c5354 C5354 Transistor 2SC5354 toshiba marking code transistor *c5354

    Untitled

    Abstract: No abstract text available
    Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) • High collector breakdown voltage: VCEO = 400 V


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    PDF 2SC5355

    C5355

    Abstract: 2SC5355
    Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) • High collector breakdown voltage: VCEO = 400 V


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    PDF 2SC5355 C5355 2SC5355

    c5351

    Abstract: 2SC5351
    Text: 2SC5351 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5351 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V


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    PDF 2SC5351 c5351 2SC5351

    C5355

    Abstract: 2SC535 2SC5355
    Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) · High collector breakdown voltage: VCEO = 400 V


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    PDF 2SC5355 C5355 2SC535 2SC5355

    C5355

    Abstract: 2SC5355
    Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) • High collector breakdown voltage: VCEO = 400 V


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    PDF 2SC5355 C5355 2SC5355

    Untitled

    Abstract: No abstract text available
    Text: 2SC5351 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5351 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V


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    PDF 2SC5351

    Untitled

    Abstract: No abstract text available
    Text: 2SC5354 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs max tf = 0.5 µs (max) (IC = 2 A)


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    PDF 2SC5354

    Untitled

    Abstract: No abstract text available
    Text: 2SC5351 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5351 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V


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    PDF 2SC5351