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    TRANSISTOR C5196 Search Results

    TRANSISTOR C5196 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C5196 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5196

    Abstract: Transistor C5196 Toshiba transistor c5196 2SA1939 2SC5196
    Text: 2SC5196 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C Characteristics


    Original     		PDF 2SC5196 2SA1939 c5196 Transistor C5196 Toshiba transistor c5196 2SA1939 2SC5196

    c5196

    Abstract: Toshiba transistor c5196 Transistor C5196 2SA1939 2SC5196
    Text: 2SC5196 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C Characteristics


    Original     		PDF 2SC5196 2SA1939 c5196 Toshiba transistor c5196 Transistor C5196 2SA1939 2SC5196

    Toshiba transistor c5196

    Abstract: c5196 Transistor C5196
    Text: 2SC5196 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C Characteristics


    Original     		PDF 2SC5196 2SA1939 2-16C1A Toshiba transistor c5196 c5196 Transistor C5196

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF