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    TRANSISTOR C206 Search Results

    TRANSISTOR C206 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C206 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BTC3838N3

    Abstract: FT-32
    Text: CYStech Electronics Corp. Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 1/4 High Frequency Amplifier Transistor 11V, 50mA, 3.2GHz BTC3838N3 Features • High transition frequency, fT=3.2GHz(typ.) • Low output capacitance, Cob=0.8pF(typ.)


    Original     		PDF C206N3 BTC3838N3 OT-23 UL94V-0 BTC3838N3 FT-32

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145

    TRANSISTOR C802

    Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw

    Untitled

    Abstract: No abstract text available
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz


    Original     		PDF PTFB213004F PTFB213004F 300-watt H-37275-6/2

    VdS 2093 2009

    Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz


    Original     		PDF PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114

    C801

    Abstract: 1/db3 c801
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801

    TL272

    Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
    Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty


    Original     		PDF PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113

    TRANSISTOR C802

    Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    TL225

    Abstract: ATC100A6R2CW150X
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217

    transistor c735

    Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103

    SMD r801

    Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original     		PDF PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    Untitled

    Abstract: No abstract text available
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    Operational Transconductance Amplifier pspice

    Abstract: transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF CG22DF2) Operational Transconductance Amplifier pspice transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC

    transisTOR C124

    Abstract: Operational Transconductance Amplifier pspice c124 transistor cdt660 OPA660 transistor directory TR BC 548 TI 121 Transistor opa660 pspice transistor c202
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF

    1-450-358-11

    Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
    Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.


    Original     		PDF TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE

    D2061 transistor

    Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
    Text: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)


    Original     		PDF MD0604120A3 SA-VK650GCP SA-VK650GC/GN/GS/GCS/GCT-S, MD0604118C3] SC-VK650 SA-VK650 SB-VK650 SB-WVK650 0A072 F2G0J470A031 D2061 transistor B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    MC2003

    Abstract: MC2000 MC2023 MC2002 MC2100 MC2052 MC2124 MC2073 MC2112 MC2153
    Text: INTEGRATED CIRCU ITS FROM MOTOROLA mm oo M C2000 Series 0 to +75°C M C2100 Series (—55 to +125°C) M T T L II integrated circu its co m prise a fa m ily o f transistor-transistor logic designed fo r general pu rpo se digital applications. T h e fa m ily has a high o pe ratin g speed <30-50


    OCR Scan     		PDF MC2000 MC2100 MC2028/MC2078 MC2128/MC2178 MC2003 MC2023 MC2002 MC2052 MC2124 MC2073 MC2112 MC2153

    C502 Zener diode

    Abstract: vr301 potentiometer VR501 F101 Type T fuse TRANSISTOR C309 4518BE VR502 vr302 potentiometer 2sc1015-GR 2SC1015GR
    Text: ^ SERVICING INFORMATION B X PRECISION* M O D E L 3011A 3011B FUNCTION GENERATOR PARTS LIST SCHEMATIC SYMBOL DESCRIPTION B+K PRECISION PART NUMBER RESISTORS Unlisted resistors are +5%, 1/4 W. See Schematic for value. R101, 102 R104 R105 R205 R206 R207 R208


    OCR Scan     		PDF 3011B R210A R211A R306-307 R405-407 VR205_ C502 Zener diode vr301 potentiometer VR501 F101 Type T fuse TRANSISTOR C309 4518BE VR502 vr302 potentiometer 2sc1015-GR 2SC1015GR