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    TRANSISTOR C114 CHIP Search Results

    TRANSISTOR C114 CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C114 CHIP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c114

    Abstract: RLI-135 viper 224 VIPER53 transistor c114 diagram VIPer53 Application Note c113 transistor transistor c113 VIPER53 application J107 DIODE
    Text: AN2067 APPLICATION NOTE VIPower: DIMMABLE WHITE LEDS POWER SUPPLY WITH VIPer53 In the same way that LED manufacturers succeed to realize blue LEDs, they now propose white LEDs inside a monolithic chip, or so called “singlechip white” LEDs. A current source is the more appropriate way to


    Original     		PDF AN2067 VIPer53 transistor c114 RLI-135 viper 224 VIPER53 transistor c114 diagram VIPer53 Application Note c113 transistor transistor c113 VIPER53 application J107 DIODE

    transistor c114

    Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
    Text: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC


    Original     		PDF Intel740TM BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC C0805C103K5RAC 330PF T491D106K016AS C0805C331J5GAC T491D226K016AS transistor c114 c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR

    transistor c114 diagram

    Abstract: SWITCHING TRANSISTOR C114 transistor c114 digital transistor c114 AN1994 diode d1n4148 STA508 AN1965 STA505 STA50X
    Text: AN1994 APPLICATION NOTE STA50X DIGITAL POWER FAMILY This applicationnote is related to the STA50X series of DDX high efficiency output stages. 1 PIN DESCRIPTION Table 1. STA500, STA505, STA506, STA508 Pin N’ Pin Name 1 GND_sub 2 OUT2B Output Half Bridge 2B


    Original     		PDF AN1994 STA50X STA500, STA505, STA506, STA508 transistor c114 diagram SWITCHING TRANSISTOR C114 transistor c114 digital transistor c114 AN1994 diode d1n4148 STA508 AN1965 STA505

    SWITCHING TRANSISTOR C114

    Abstract: transistor c114 diagram transistor c114 transistor c114 diagrams AN1994 transistor c114 chip ESR C114 transistor STA508 STA50X 100nF 63V polyester capacitor
    Text: AN1994 APPLICATION NOTE STA50X DIGITAL POWER FAMILY This applicationnote is related to the STA50X series of DDX high efficiency output stages. 1 PIN DESCRIPTION Table 1. STA500, STA505, STA506, STA508 Pin N’ Pin Name 1 GND_sub 2 OUT2B Output Half Bridge 2B


    Original     		PDF AN1994 STA50X STA500, STA505, STA506, STA508 SWITCHING TRANSISTOR C114 transistor c114 diagram transistor c114 transistor c114 diagrams AN1994 transistor c114 chip ESR C114 transistor STA508 100nF 63V polyester capacitor

    transistor c118

    Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 a080304 transistor c118 C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124

    Untitled

    Abstract: No abstract text available
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz


    Original     		PDF PTFB213004F PTFB213004F 300-watt H-37275-6/2

    VdS 2093 2009

    Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz


    Original     		PDF PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114

    Untitled

    Abstract: No abstract text available
    Text: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having


    Original     		PDF PIC32MX7Â PIC32MX795F512L PIC32Â PIC32 PIC32MX7

    transistor c114

    Abstract: No abstract text available
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


    Original     		PDF PTMA080304M PTMA080304M 20-lead transistor c114

    FRD070IF40-A

    Abstract: FRD070IF40-A-T C-118
    Text: V mikromedia 7 for STM32F4 Amazingly compact, all-on-single-pcb development board carring 7” TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM Cortex -M4 family To our valued customers I want to express my thanks to you for being interested in our products and for


    Original     		PDF STM32F4 STM32F407ZG STM32F4 STM32, STM32F4 FRD070IF40-A FRD070IF40-A-T C-118

    Untitled

    Abstract: No abstract text available
    Text: mikromedia+ for STM32 ARM Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS


    Original     		PDF STM32 STM32F407ZG STM32,

    30w subwoofer circuit diagram

    Abstract: subwoofer preamplifier circuit diagram transistor subwoofer circuit diagram subwoofer amplifier circuit diagram ACTIVE SUBWOOFER WITH AMP Active subwoofer circuit 2.1 channel subwoofer amplifier circuit diagram subwoofer preamplifier circuit 12v subwoofer amp circuits bass control in stereo 12v active subwoofer IC
    Text: Maxim > App Notes > Audio Circuits Keywords: audio, class-d, classd, amplifier, power, active filter, mp3, active eq, woofer, subwoofer, tweeter, 2.1 channel, high pass filter, parametric eq, sallen-key filter, speaker, speakers Feb 27, 2009 APPLICATION NOTE 4320


    Original     		PDF MAX9736 com/an4320 MAX9736A: MAX9736B: AN4320, APP4320, Appnote4320, 30w subwoofer circuit diagram subwoofer preamplifier circuit diagram transistor subwoofer circuit diagram subwoofer amplifier circuit diagram ACTIVE SUBWOOFER WITH AMP Active subwoofer circuit 2.1 channel subwoofer amplifier circuit diagram subwoofer preamplifier circuit 12v subwoofer amp circuits bass control in stereo 12v active subwoofer IC

    C134 transistor

    Abstract: No abstract text available
    Text: mikromedia+ for Stellaris ARM® Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful LM4F232H5QD microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS


    Original     		PDF LM4F232H5QD C134 transistor

    J103 transistor

    Abstract: transistor c223
    Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB072707FH PTFB072707FH b072707fh-gr1 J103 transistor transistor c223

    transistor c124

    Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148

    TL306

    Abstract: TL184 TL167 TL307
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 96stances. TL306 TL184 TL167 TL307

    TL250

    Abstract: TL239
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PDF PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PDF PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152

    Untitled

    Abstract: No abstract text available
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PDF PTFB093608FV PTFB093608FV H-34275G-6/2

    PTFB093608

    Abstract: 32c216 PTFB093608SV c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143
    Text: PTFB093608SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PDF PTFB093608SV PTFB093608SV H-34275G-6/2 PTFB093608 32c216 c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143

    PTFB093608

    Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PDF PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145

    hitachi mpu guide

    Abstract: c103 TRANSISTOR Combo Driver spwm TRANSISTOR c104 "Hitachi, Ltd., 1997" Hitachi DSA00173
    Text: HA13568T CD-ROM Combo Driver ADE-207-247E Z 6th Edition May 1, 1998 Description The HA13568T is combination of Spindle, Forcus, Tracking, Slide, Tray designed for CD-ROM and have following function and features. Features • • • • • • • • 1.5 A sensorless spindle driver


    Original     		PDF HA13568T ADE-207-247E HA13568T D-85622 hitachi mpu guide c103 TRANSISTOR Combo Driver spwm TRANSISTOR c104 "Hitachi, Ltd., 1997" Hitachi DSA00173

    transistor c114

    Abstract: C114 Transistor transistor c114 chip transistor c114 NPN C114 E S W transistor for C114 transistor NPN C114 C-114 c114 2N3442
    Text: 8368602 SOL ITRON DEVICES INC TS 95D 02905 D DE |fl3t.flb02 ODDSIDS 3 • “ [ ^ p y © ? ©ATTAIL© _ Devices, Inc. MEDIUM VOLTAGE CHIP N U M BER NPN SINGLE DIFFUSED MESA TRANSISTOR CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.


    OCR Scan     		PDF flb02 2N3442, 2N4348 C-114 transistor c114 C114 Transistor transistor c114 chip transistor c114 NPN C114 E S W transistor for C114 transistor NPN C114 C-114 c114 2N3442