TRANSISTOR C102 Search Results

TRANSISTOR C102 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C102 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
c1028 transistor Abstract: c1028 Text: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor	Original	PDF	C1028 C1028-4-98 65x65 c1028 transistor c1028
c1028 Abstract: No abstract text available Text: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor	Original	PDF	C1028 65x65 c1028
C1028 Abstract: c1028 transistor Text: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor	Original	PDF	C1028 65x65 C1028 c1028 transistor
C1029 Abstract: No abstract text available Text: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage	Original	PDF	C1029 C1029-4-98 65x65 C1029
C1029 Abstract: No abstract text available Text: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage	Original	PDF	C1029 65x65 C1029
C1029 Abstract: No abstract text available Text: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage	Original	PDF	C1029 65x65 C1029
transistor c1026 Abstract: C1026 c1026 transistor C1026 NPN Transistor transistor c1026 equivalent Text: ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50	Original	PDF	C1026 100x3 C1026-4-98 65x65 transistor c1026 C1026 c1026 transistor C1026 NPN Transistor transistor c1026 equivalent
transistor c1026 Abstract: C1026 C1026 NPN Transistor equivalent transistor C1026 transistor c1026 equivalent c1026 transistor Text: ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50	Original	PDF	C1026 100x3 65x65 transistor c1026 C1026 C1026 NPN Transistor equivalent transistor C1026 transistor c1026 equivalent c1026 transistor
transistor c1026 Abstract: C1026 NPN Transistor C1026 c1026 transistor transistor c1026 equivalent transistor c1026 data Text: ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50	Original	PDF	C1026 100x3 65x65 transistor c1026 C1026 NPN Transistor C1026 c1026 transistor transistor c1026 equivalent transistor c1026 data
c1027 transistor Abstract: transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027 Text: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted	Original	PDF	C1027 100x1 100x100 65x65 c1027 transistor transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027
c1027 transistor Abstract: transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent Text: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted	Original	PDF	C1027 100x1 100x100 65x65 c1027 transistor transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent
transistor c1027 Abstract: C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents Text: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted	Original	PDF	C1027 100x1 100x100 C1027-4-98 65x65 transistor c1027 C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents
TL113 Abstract: tl201 TL217 w3 smd transistor transistor c111 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200	Original	PDF	PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111
C-107 Abstract: C-108 IRGBC30FD2 c103 a ge Text: Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes	Original	PDF	IRGBC30FD2 10kHz) O-220AB C-108 C-107 C-108 IRGBC30FD2 c103 a ge

c102 TRANSISTOR Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PDF	PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
c103 a ge Abstract: C-107 C-108 IRGBC30FD2 Text: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to	Original	PDF	IRGBC30FD2 10kHz) O-220AB C-108 c103 a ge C-107 C-108 IRGBC30FD2
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PDF	PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
TRANSISTOR C802 Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
Untitled Abstract: No abstract text available Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz	Original	PDF	PTFB213004F PTFB213004F 300-watt H-37275-6/2
VdS 2093 2009 Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114 Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz	Original	PDF	PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114
C-107 Abstract: C-108 IRGBC30FD2 transistor c107 m IRGBC30 c103 a ge Text: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to	Original	PDF	IRGBC30FD2 10kHz) O-220AB C-108 C-107 C-108 IRGBC30FD2 transistor c107 m IRGBC30 c103 a ge
C801 Abstract: 1/db3 c801 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801
Untitled Abstract: No abstract text available Text: M E C L II M C 1000/1200 series D U A L 4 -5 IN P U T EXPANDERS MC1025 MCI 225 D ual expander arrays, with a 4-transistor array isolated from a 5transistor array. T he collectors and emitters from both arrays m ay be connected to form a 9-transistor array. W ith each base available, a 4,	OCR Scan	PDF	MC1025 20-input 40-input 1024/MC C102S/M C1225
2n189 Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits	OCR Scan	PDF	2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

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TRANSISTOR C102 Search Results

TRANSISTOR C102 Result Highlights (5)

TRANSISTOR C102 Datasheets Context Search

c1028 transistor

c1028

C1028

C1029

C1029

C1029

transistor c1026

transistor c1026

transistor c1026

c1027 transistor

c1027 transistor

transistor c1027

TL113

C-107

c102 TRANSISTOR

c103 a ge

TL139

TRANSISTOR C802

Untitled

VdS 2093 2009

C-107

C801

Untitled

2n189