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    TRANSISTOR C 9012 Search Results

    TRANSISTOR C 9012 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 9012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor 9012 ax

    Abstract: transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012
    Text: S9013 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion Colle ctor Curre nt Ic=500mA TO- 92 Colle ctor P owe r Dissipa tion P c=625mW Compleme ntary to S 9012 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge


    Original     		PDF S9013 500mA 625mW 100MHz 100mA Transistor 9012 ax transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012

    Transistor-9013 h

    Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF

    9012 Unisonic

    Abstract: 9012L-
    Text: UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  1 FEATURES TO-92 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity


    Original     		PDF 625mW) -500mA) 9012L-x-T92-B 9012G-x-T92-B 9012L-x-T92-K 9012G-x-T92-K QW-R201-0at QW-R201-029 9012 Unisonic 9012L-

    transistor c 9012

    Abstract: PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 20MHz transistor c 9012 PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp

    transistor c 9012

    Abstract: PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 20MHz transistor c 9012 PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN

    transistor c 9012

    Abstract: PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 20MHz transistor c 9012 PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012

    transistor c 9012

    Abstract: PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 20MHz transistor c 9012 PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor

    9012 Unisonic

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


    Original     		PDF 625mW) -500mA) -50mA -500mA -500mA -10mA QW-R201-029 9012 Unisonic

    9013 transistor

    Abstract: Transistor-9013 h UTC 9013 9013 NPN Transistor
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


    Original     		PDF 625mW) 500mA) 500mA 500mA, QW-R201-030 9013 transistor Transistor-9013 h UTC 9013 9013 NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


    Original     		PDF 625mW) -500mA) QW-R201-029

    9012 pnp

    Abstract: UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


    Original     		PDF 625mW) -500mA) QW-R201-029 9012 pnp UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013

    UTC 9013

    Abstract: 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


    Original     		PDF 625mW) 500mA) QW-R201-030 UTC 9013 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic

    9013 npn

    Abstract: NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES 1 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012


    Original     		PDF 625mW) 500mA) 9013-x-T92-B 9013L-x-T92-B 9013G-x-T92-B 9013-x-T92-K 9013L-x-T92-K 9013G-x-T92-K 9013-x-T92-R 9013L-x-T92-R 9013 npn NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    transistor cs 9012

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. PT=625mW High C ollector Current. (lc=500m A) C om plem entary to S S 9012 Excellent hpE linearity.


    OCR Scan     		PDF SS9013 625mW transistor cs 9012

    2N4115

    Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346
    Text: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca|l T O LL FR EE 800-526-4581 PNP


    OCR Scan     		PDF NPWTO-111 fl35a 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346

    s484

    Abstract: 7481A
    Text: TYPES SN5481A, SNS484A. SN7481A. SN7484A 16-BIT RANDOM-ACCESS MEMORIES n i MSI B U L L E T IN NO . DL-S 7 2 1 15 8 1. D E C E M B E R 1972 description Each of these 16-bit active-element memories is a high-speed, m onolithic, transistor-transistor-logic SN6481A . . . J OR W PACKAGE


    OCR Scan     		PDF SN5481A, SNS484A. SN7481A. SN7484A 16-BIT SN5484, s484 7481A

    2N5084

    Abstract: 2N5284 FL-35A 2N4115 2N5085 2N4116 2N5002 2N5004 2N5083 2N5285
    Text: llP NPMTO-111 I s o la t e d c n llB n t n . - lt e n n . - r t ' ^ 84aa_^ 2 DIQDE TRANSISTOR CO IN C . l a f l H B 3 S E 0G0Q13S □ I Ö4D 0 0 1 2 8 ^ ——— t D1DDE TRANSISTOR CQ.J(\IC. FA X ^ 201 ^ 6 75 58 83 139-385 * 0u,8lde N V 4 N J area ca|l T O LL F R EE 800-526-4581


    OCR Scan     		PDF NPWTO-111 fl35a Tfidf\l515T0R 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 FL-35A 2N5285

    Untitled

    Abstract: No abstract text available
    Text: TTL MSI TYPES SN548ÎA, SN5484A. SN7481A. SN7484A 16-BIT RANDOM-ACCESS MEMORIES B U L L E T I N N O . D L -S 7 2 1 1 5 8 1 , D E C E M B E R 1 9 7 2 description Each o f these 16-bit active-element memories is a high-speed, m o n o lith ic, transistor-transistor-logic


    OCR Scan     		PDF SN548 SN5484A. SN7481A. SN7484A 16-BIT SN5481, SN7481, SN5484, SN7484,

    2sc 9015

    Abstract: 2236A 2482 TRANSISTOR 9014 to-92 KTC2229 2SC 9012 966a KTC9016 ktp87 9015 TO-92
    Text: @] TV TRANSISTOR USE TYPE VC E 0 V 7K O ELECTRICAL CHARACTERISTICS (Ta = 2 5 C ) MAXIMUM RATINGS lC pC T. ICBO (mA) (mW) <°C) (M A) hFE V c e (M t) MAX VCB [E V CE k' (V) (m A) (V) (mA) (V) Ic Ib (m A) (mA) (MHz) Z*J C o b , * Cre T yp (MIN) h VCE lc (V)


    OCR Scan     		PDF 382/KTN 383/KTN 88A/KTN 2229/KTN KTC9013 2sc 9015 2236A 2482 TRANSISTOR 9014 to-92 KTC2229 2SC 9012 966a KTC9016 ktp87 9015 TO-92

    kec kta

    Abstract: 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068
    Text: 0 TV TRANSISTOR ELECTRICAL CHARACTERISTICS Ta = 25 C MAXIMUM RATINGS USE TYPE VCEO (V) lC (mA) VCE (sat) MAX hFE TJ ICBO (mW) <°C) ( m A) VCB (V) PC [E (mA) VCE (V) ic (mA) (V) C o b ,* Crc Typ (MIN) h (MHz) VCE (V) 1c (mA) - (400) 10 4 Ic (mA) Iß (mA)


    OCR Scan     		PDF 382/KTN 383/KTN 88A/KTN 2229/KTN O-92A) KTC90U KTC9013 kec kta 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068

    transistor c 9018

    Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
    Text: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF


    OCR Scan     		PDF T0-92B 500fi 10kfi transistor c 9018 Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor

    2n120

    Abstract: Transistor 9012 ax 9012 transistor
    Text: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures m echanical d a ta W elded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


    OCR Scan     		PDF 2N120 7S222 Transistor 9012 ax 9012 transistor

    PNP 9012

    Abstract: transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn
    Text: HN 9012 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type


    OCR Scan     		PDF 103mA PNP 9012 transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn