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    TRANSISTOR C 718 Search Results

    TRANSISTOR C 718 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 718 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    an5296

    Abstract: CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN
    Text: CA3146, CA3146A, CA3183, CA3183A S E M I C O N D U C T O R High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)


    Original     		PDF CA3146, CA3146A, CA3183, CA3183A 120MHz CA3146A) an5296 CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN

    Untitled

    Abstract: No abstract text available
    Text: S T U/D1955NL S amHop Microelectronics C orp. Dec 31,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.


    Original     		PDF U/D1955NL O-252 O-251 O-252AA O-252

    Untitled

    Abstract: No abstract text available
    Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.


    Original     		PDF U/D1955NL O-252 O-251 O-252AA Tube/TO-252 O-252

    D1955NL

    Abstract: D1955
    Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.


    Original     		PDF U/D1955NL O-252 O-251 O-252AA Tube/TO-252 O-252 D1955NL D1955

    Untitled

    Abstract: No abstract text available
    Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.


    Original     		PDF U/D1955NL O-252 O-251 O-252AA Tube/TO-252 O-252

    BUX20

    Abstract: bux 716 transistor BUX
    Text: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection


    OCR Scan     		PDF BUX20 CB-159 BUX20 bux 716 transistor BUX

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC5004 D 1437 transistor

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    MMT806

    Abstract: MMT808
    Text: MMT806 SILICON M ICROM INIATURE NPN SILICON ANNULAR TRANSISTOR MICRO POWER SER IES NPN SILICON SWITCHING TRANSISTOR . . . designed for high-speed, low-power switching circuits. • DC Current Gain @ Ultra Low C urrent— • High Current'Gain — Bandwidth Product —


    OCR Scan     		PDF MMT806 MMT808 100MAdc, 10/JAdc) 10MAdc, MMT806 MMT808

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558

    Transistor BFR 96

    Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A
    Text: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar


    OCR Scan     		PDF fl235bD QQQMb70 BFR34A 2N6620. Q62702-F346-S1 Q68000-A4668 0Q0Mb73 Transistor BFR 96 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99

    transistor 1548 b

    Abstract: transistor a 1707 BFQ136 NPN/acsl 086 s
    Text: P h ilip s S e m ic o jid u c to r e ^ H ttiS 3 T 31 0 0 3 1 ti7 2 • APX P rod uctspecification NPN 4 GHz wideband transistor ^ BFQ136 N b^E J> AUER PHILIPS/DISCRETE PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT 122A envelope with a ceramic cap. All leads are isolated


    OCR Scan     		PDF ttiS3T31 0031fci7c! BFQ136 OT122A transistor 1548 b transistor a 1707 BFQ136 NPN/acsl 086 s

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5010

    transistor c 5855

    Abstract: PTB23006U SC15
    Text: Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U FEATURES QUICK REFERENCE DATA • Very high power gain Microwave performance up to T mb = 25 °C in a common-base class C • Diffused emitter ballasting resistors improve ruggedness


    OCR Scan     		PDF PTB23006U OT440A OT44QA. transistor c 5855 PTB23006U SC15

    ULN2803

    Abstract: LN2803A-U IC ULN2803 IC 2804 driver ULN2803 la 7184 ULN2804R ULN2804 LN2803 OF ULN2803
    Text: M MOTOROLA. -Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this fam ily of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, C M O S or P M O S /N M O S ) and the h ig h e r c u rre n t/v o lta g e


    OCR Scan     		PDF ULN2803 ULN2804 ULN2804 ULN2802 ULN2801 LN2803A-U IC ULN2803 IC 2804 driver ULN2803 la 7184 ULN2804R LN2803 OF ULN2803

    2-10P1B

    Abstract: 2SK1600
    Text: T O SH IB A cìOtì7SSG 002331=1 SMI TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 600 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • 2SK1600 INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SK1600 100/jA 20kfi) 50URCE O-220FL 00E3b43 O-220SM 002Bb44 2-10P1B 2SK1600

    bux21

    Abstract: emetteur bux THOMSON P6021 bux 722 JSE10 amplificateur puissance
    Text: *B U X 21 NPN S IL IC O N TR A N S IS TO R , TR IP L E D IF F U S E D MESA TR A N S IS TO R S IL IC IU M NPN, MESA T R IP L E D IF F U S E ^P re fe rre d device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt couran t


    OCR Scan     		PDF CB-159 bux21 emetteur bux THOMSON P6021 bux 722 JSE10 amplificateur puissance

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON POWER FCX718 SWITCHING TRANSISTOR ISSSUE 1 - DECEMBER 1998 FE A TU R E S * 2W POWER D IS S IP A T IO N * 6A Peak Pulse C urrent * E xcellen t H FE C haracteristics up to 6A m p s * E x tre m e ly Lo w S a tu ra tio n V o lta g e E.g. 1 6 m v T y p .


    OCR Scan     		PDF FCX718

    Untitled

    Abstract: No abstract text available
    Text: TDTTSSD 0023311 250 TOSHIBA TO SH IBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N C H ANN EL M O S TYPE 2 S K 1 530 HIGH POW ER AMPLIFIER APPLICATION • • • U nit in mm High Breakdown Voltage : V j gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.)


    OCR Scan     		PDF 2SK1530 2SJ201 2-21F1B O-220SM

    MRD300

    Abstract: MRD310
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD300 MRD310* P h o to D e te c to rs Transistor Output * M o to ro la Preferred D e v ic i The M RD300 and M RD310 are designed for applications requiring radiation se n sitivity and stable characteristics. PHOTO D ET EC T O R S


    OCR Scan     		PDF RD300 RD310 MRD300) MRD300 MRD310* MRD300, MRD310 MRD310

    2N2297

    Abstract: transistor 2N2297 transistor w 431
    Text: 2N2297 PHILIP S IN TE RN AT IO NA L 71100 2b SbE D 00425T4 bbT • PHIN SILICON PLANAR EPITAXIAL TRANSISTO R N-P-N transistor intended for large signal h.f. and v.h.f. amplifier applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter


    OCR Scan     		PDF 2N2297 711002b 00425T4 D04S5 2N2297 transistor 2N2297 transistor w 431

    ra5b

    Abstract: CA3046E transistor EM 3045 am ca3046
    Text: ff! H a r r is CA3045 CA3046 General Purpose N -F -N Transistor Arrays August 1991 Description Features • T w o M a tch ed T ransistors: V jje M a tch ed In put O ffs e t C u rre n t 2fiA M ax at lc = 1m A The CA3045 and CA3046 each consist of five general


    OCR Scan     		PDF CA3045 CA3046 CA3046 CA30I CA3045. ra5b CA3046E transistor EM 3045 am

    MRD300

    Abstract: 716 Motorola MRD310 light sensitive photo diode To18 transistor motorola reliability color sensitive PHOTO TRANSISTOR Rise time of photo transistor 716 transistor
    Text: ROLA SC D I O D E S / O P T O L4E T> b 3 b ? Z 5 5 OOflb77b TIT • MOT? MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RD300 M R D 310* P h o to D e te c to rs Transistor Output •Motorola Preferred Device The MRD300 and MRD310 are designed fo r applications re qu irin g radiation sensitivity


    OCR Scan     		PDF b3b72SS MRD300 MRD310 MRD300) b3t72ss MRD300, MRD310 716 Motorola light sensitive photo diode To18 transistor motorola reliability color sensitive PHOTO TRANSISTOR Rise time of photo transistor 716 transistor

    ns8002

    Abstract: 2sc710 transistor transistor 2SC710 2SC710 C 2SA561 2SC710 2SC710-15 138B LT 735 2SA562
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 150pS 2SA561 Tbb-150pS 2SA562^ 150MHz. rbb-30pS ns8002 2sc710 transistor transistor 2SC710 2SC710 C 2SC710 2SC710-15 138B LT 735 2SA562