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    TRANSISTOR C 3531 Search Results

    TRANSISTOR C 3531 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 3531 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1-450-358-11

    Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
    Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.


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    PDF TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE

    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


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    PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC

    S7116A

    Abstract: S13P40A IC HS 8110 equivalent transistor s8850 4609 MOSFET INVERTER chip 8-pin 4502 S-2927A bu 808 af S8850 by 808 dfx
    Text: CMOS IC Product Catalog Components Headquaters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module Please visit our HomePage for more new information. <http://www.sii.co.jp/compo> Contents


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    PDF S-808 S-807 S-806 S-809 1-9807-020-MS/AC S7116A S13P40A IC HS 8110 equivalent transistor s8850 4609 MOSFET INVERTER chip 8-pin 4502 S-2927A bu 808 af S8850 by 808 dfx

    BLY87A

    Abstract: D-05 blv87
    Text: Ob E N AUER P H I L I P S / D I S C RE T E 86D 01878 r D D bbSBTBl 0 O l m i fa 1 • - BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to


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    PDF BLY87A jKS84 BLY87A D-05 blv87

    CI Z 131 R-10

    Abstract: BLW87 h a 431 transistor transistor L6
    Text: N AMER PHILIPS/DISCRETE tlE » • bbS3T31 0051474 72T H A P X BL-VVO A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


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    PDF bbS3T31 OT-123. 7Z67567 CI Z 131 R-10 BLW87 h a 431 transistor transistor L6

    Untitled

    Abstract: No abstract text available
    Text: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to


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    PDF DD1411L BLY87A

    RX1214B150W

    Abstract: No abstract text available
    Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C


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    PDF bb53131 RX1214B150W RX1214B150W

    RX1214B150W

    Abstract: transistor bc 325
    Text: J J _ L _ _ N AMER PHILIPS/DISCRETE OLE D • I JJ ^ O5O3J1 3 1 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C


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    PDF bb53131 RX1214B150W resistanc250 RX1214B150W transistor bc 325

    Untitled

    Abstract: No abstract text available
    Text: ^ 33= 131 0 0 2 0 5 2 0 25E D N AMER P H I L I P S / D I S C R E T E S BUK456-50A BUK456-50B PowerMOS transistor T - 3^-13 GENERAL DESCRIPTION SYM BO L Cfl Q > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF BUK456-50A BUK456-50B BUK456

    WE VQE 23 F

    Abstract: BFS17AA WE VQE 11 E WE VQE 24 E BFS17 BFS17A TRANSISTOR BSP 149 TRANSISTOR A22 transistor marking A21
    Text: N AMER P H I L I P S / D I S C R E T E ESE D • 1^ 5 3 = 1 3 1 0013145 b B FS 17A T -3 M 7 N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is intended fo r a wide range o f v.h.f. and u.h.f. applications in thick and thin-film circuits.


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    PDF BFS17A OT-23 BFS17A BFS17 bb53t31 500MHz; WE VQE 23 F BFS17AA WE VQE 11 E WE VQE 24 E TRANSISTOR BSP 149 TRANSISTOR A22 transistor marking A21

    smd code HF transistor

    Abstract: transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76
    Text: • hbS3131 0DE47Qfl 14fl ■ N AMER P H I L I P S / D I S C R E T E APX BF824 fc.7E D J V_ H.F. SILICON PLANAR EPITAXIAL T RA N SIST O R P-N-P transistor in a plastic SO T-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for S M D applications.


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    PDF hbS3131 QDE47QS BF824 OT-23 7z72158 DDEM713 BF824 7z72157 7z72161 smd code HF transistor transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76

    equivalent transistor K 3531

    Abstract: two transistor flyback k 3531 transistor J16110 transistor equivalent table MJW16110 MJ16110 transistor K 3531
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘Motorola Pr*f*rr»d Dcvlc« SWITCHMODE Bridge Series . . . specifically designed for use In half bridge and full bridge off line converters.


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    PDF MJ16110* MJW16110* MUR105 MUR170 UR405 MUR470 AR131) equivalent transistor K 3531 two transistor flyback k 3531 transistor J16110 transistor equivalent table MJW16110 MJ16110 transistor K 3531

    ceramic capacitor philips 561

    Abstract: AI mm sot 553 BLV98CE IEC134 transistor k 117 GR
    Text: N AMER PHILIPS/DISCRE TE bTE J> >hiliDs Semiconductors BLV98CE Data sheet status Product specification date of issue March 1 9 9 3 bbS3T31 ODe^lflD 2flG * A P X UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain


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    PDF BLV98CE bbS3T31 OT-171 uca924 ceramic capacitor philips 561 AI mm sot 553 BLV98CE IEC134 transistor k 117 GR

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is


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    PDF BUZ384 bbS3i31 00147T0 BUZ384 T-39-13 bb53T31 bb53T31 Q0147TS

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability


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    PDF bb53T31 BFQ67W OT323 UBC870 OT323. OT323

    BUZ84A

    Abstract: No abstract text available
    Text: PowerMOS transistor_ BUZ84A_ | N AUER PHILIPS/DISCRETE ObE D • bbSBTBl 0 0 m 7 0 3 5 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metai envelope. This device is intended for use in


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    PDF BUZ84A_ BUZ84A bbS3T31 T-39-13 BUZ84A

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHIL I P S / D I S CR E T E 5SE D fc.b53^31 DDEOSTO 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r-3 i- o i GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    PDF BUK545-50A BUK545-50B BUK545

    optocoupler ic

    Abstract: Philips MBB BS415 CNG82 CNG83 7Z04 Phototransistor til 81 phototransistor til 31
    Text: Product specification GaAIAs high-voltage optocouplers CNG82/CNG83 FEATURES • High output/input current transfer ratio at low input current • High degree of AC and DC insulation 3750 V (RMS and 5300 V (DC) • input/output pin distance 10.16 mm » APPROVALS


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    PDF CNG82/CNG83 CNG82 CNG83 OT212 CNG83. DD353CH OlVccrSVJrt-25 optocoupler ic Philips MBB BS415 7Z04 Phototransistor til 81 phototransistor til 31

    TLP503

    Abstract: TLP501 TLP582 tlp505 TL 582 OPTICAL COUPLER triac based ac motor speed control using light Toshiba tlP521 Photocoupler TLP506G k 3531 transistor
    Text: 8. Application Note 8-1 8-1-1 Outline of Photocouplers Description of Photocouplers for General Purposes • Structure and Basic Characteristics Demand for photocouplers entered a real growth period around 1977. The background for this is the increasing application in signal transmission between CPU and peripheral


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    PDF

    IRF840 Harris

    Abstract: HARRIS
    Text: HARRIS SENICOND SECTOR bflE D 43 02 57 1 G D S l l S a 33Ö PCF440W PCF440D HARRIS S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Die Features • HAS Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal Al-Ti-Ni


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    PDF PCF440W PCF440D Mil-Std-750, IRF840 IRFP440 IRF440 PCF440D 170x200 1-800-4-HARRIS IRF840 Harris HARRIS