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    TRANSISTOR C 3331 Search Results

    TRANSISTOR C 3331 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 3331 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Super-247 Package

    Abstract: IRG4PSC71UD
    Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF 1682A IRG4PSC71UD Super-247 O-247 Super-247 Package IRG4PSC71UD

    Untitled

    Abstract: No abstract text available
    Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF 1682A IRG4PSC71UD Super-247 O-247

    diode lt 247

    Abstract: IRG4PSC71UD TB diode 1084 GE
    Text: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF IRG4PSC71UD Super-247 O-247 diode lt 247 IRG4PSC71UD TB diode 1084 GE

    IRG4BC40W

    Abstract: No abstract text available
    Text: PD - 9.1654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC40W IRG4BC40W

    OZ930

    Abstract: IRG4PC50W *g4pc50w
    Text: PD - 9.1657A IRG4PC50W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4PC50W OZ930 IRG4PC50W *g4pc50w

    IRG4BC20W

    Abstract: No abstract text available
    Text: PD - 9.1652A IRG4BC20W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC20W IRG4BC20W

    AN-994

    Abstract: IRG4BC30W-S
    Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30W-S and10) AN-994 IRG4BC30W-S

    ic AM 12A

    Abstract: AN-994 IRG4BC30W-S
    Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30W-S ic AM 12A AN-994 IRG4BC30W-S

    IRG4PC30W

    Abstract: No abstract text available
    Text: PD - 9.1628 IRG4PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4PC30W IRG4PC30W

    Untitled

    Abstract: No abstract text available
    Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30W-S topol22

    IRG4BC30W

    Abstract: AN-994 IRG4BC30W-S
    Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30W-S IRG4BC30W AN-994 IRG4BC30W-S

    *g4pc50w

    Abstract: 55A TO-247AC oz829 IRG4PC50W
    Text: PD - 9.1657 IRG4PC50W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4PC50W *g4pc50w 55A TO-247AC oz829 IRG4PC50W

    IRG4BC30W

    Abstract: No abstract text available
    Text: PD - 9.1629 IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30W IRG4BC30W

    IRG4PC40W

    Abstract: No abstract text available
    Text: PD -9.1656B IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1656B IRG4PC40W IRG4PC40W

    IGBT collector voltage 5kV

    Abstract: IRG4IBC20UD
    Text: PD -91752 PRELIMINARY IRG4IBC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage … • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating


    Original     		PDF IRG4IBC20UD O-220 O-220 IGBT collector voltage 5kV IRG4IBC20UD

    Untitled

    Abstract: No abstract text available
    Text: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz


    OCR Scan     		PDF AT-31011 AT-31033 AT-31011: AT-31033: OT-143 AT-31011 AT-31033 5963-1862E 5965-1401E

    Untitled

    Abstract: No abstract text available
    Text: PD - 91723 International I R Rectifier IRG4ZC71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, ts c =10ns, V c c = 3 6 0 V , T j = 125°C,


    OCR Scan     		PDF IRG4ZC71KD SMD-10

    Untitled

    Abstract: No abstract text available
    Text: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,


    OCR Scan     		PDF IRG4PH40KD

    AT415

    Abstract: No abstract text available
    Text: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga


    OCR Scan     		PDF AT-41511, T-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, AT415

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies


    OCR Scan     		PDF MS5SM52 P0S1V22

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1715 International I R Rectifier IRFE230 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798U HEXFET TRANSISTOR JANTXV2N6798U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Summary 200Volt, 0.40Q, HEXFET T he le a d le ss c h ip c a rrie r LC C p a cka g e re p re se n ts


    OCR Scan     		PDF IRFE230 JANTX2N6798U JANTXV2N6798U MIL-PRF-19500/557] 200Volt,

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1722 International IQ R Rectifier IRFE210 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF:MIL-PRF-19500/556] N -C H A N N E L 200Volt, 1.5Q, HEXFET Product Summary T he le ad less chip c a rrie r LC C p a cka g e re p re se n ts


    OCR Scan     		PDF IRFE210 JANTX2N6784U JANTXV2N6784U MIL-PRF-19500/556] 200Volt,

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1416 International S R e c tifie r IRHNA7064 IRHNA8064 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL M EG A RAD HARD 60 Volt, 0.015 fi, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y


    OCR Scan     		PDF IRHNA7064 IRHNA8064

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1719 International I R Rectifier IRFE430 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:MIL-PRF-19500/557] N -C H A N N E L 500Vo It, 1.50i2, HEXFET Product Summary T he le a d le ss c h ip c a rrie r LC C p a cka g e re p re se n ts


    OCR Scan     		PDF IRFE430 JANTX2N6802U JANTXV2N6802U MIL-PRF-19500/557] 500Vo