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    TRANSISTOR C 3223 Search Results

    TRANSISTOR C 3223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 3223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPS5179

    Abstract: TRANSISTOR C 3223 MPS5179 small signal transistor MMBT5179 PN5179
    Text: MPS5179 PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF MPS5179 PN5179 MMBT5179 OT-23 MPS5179 MMBT5179 TRANSISTOR C 3223 MPS5179 small signal transistor PN5179

    CBVK741B019

    Abstract: F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF PN5179 MMBT5179 OT-23 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223

    PN5179

    Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF PN5179 MMBT5179 OT-23 PN5179 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2

    Untitled

    Abstract: No abstract text available
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF PN5179 MMBT5179 OT-23

    pn5179

    Abstract: MMBT5179 TF135 1/MPS5179
    Text: MPS5179 / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 C E C B TO-92 C B SOT-23 E E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF MPS5179 MMBT5179 PN5179 MPS5179 MMBT5179 OT-23 pn5179 TF135 1/MPS5179

    MPSH10

    Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
    Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters

    MPSH10 fairchild transistor

    Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
    Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 MPSH10 fairchild transistor MMBTH10 Spice Model MPS-H10 MMBTH10 TRANSISTOR C 3223 1358p

    mpsh10

    Abstract: MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C C E E TO-92 B SOT-23 B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p

    TRANSISTOR C 3223

    Abstract: MPSH10 MMBTH10 Spice Model NPN power transistor spice MMBTH10
    Text: N MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 TRANSISTOR C 3223 MMBTH10 Spice Model NPN power transistor spice MMBTH10

    MPSH10 s parameters

    Abstract: No abstract text available
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 s parameters

    MPSH10 fairchild transistor

    Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223

    CBVK741B019

    Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 CBVK741B019 F63TNR MMBTH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1

    y-parameter

    Abstract: common base amplifier circuit designing FPNH10 TRANSISTOR C 3223
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		PDF FPNH10 y-parameter common base amplifier circuit designing FPNH10 TRANSISTOR C 3223

    TF135

    Abstract: bf308
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		PDF FPNH10 TF135 bf308

    Untitled

    Abstract: No abstract text available
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		PDF FPNH10

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


    OCR Scan     		PDF /2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK

    t593

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET NO. PD-9.796 International iipRi R e c tifie r_ ir g b c 30 u d 2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency


    OCR Scan     		PDF D-6380 5S452 00EBDSS t593

    MMBTH10 Spice Model

    Abstract: No abstract text available
    Text: S iM E C D fC U C T O R MPSH10 MMBTH10 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    OCR Scan     		PDF MPSH10 MMBTH10 28E-18 MPSH10 MMBTH10 Spice Model

    pulse h1251

    Abstract: H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters
    Text: MPSH10 I MMBTH10 & D iscrete P O W E R & S ig n a l T echnologies National S e m i c o n d u c t o r " MPSH10 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common


    OCR Scan     		PDF MPSH10 MMBTH10 1000pF bSD113D pulse h1251 H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters

    bf282

    Abstract: mps51
    Text: S E M IC O N D U C T O R tm / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 SOT-23 Mark: 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |^A to 30 m A range in common em itter or comm on base m ode of operation, and in low frequency


    OCR Scan     		PDF MPS5179 MMBT5179 PN5179 MMBT5179 OT-23 28E-18 bf282 mps51

    CA3223

    Abstract: CA3210E 3 bit counter vertical section of monitor 3-bit counter CA3229
    Text: Video/Monitor Circuits CA3210, CA3223 TV Horizontal/Vertical Countdown Digital Sync System For 525-L ine C A 3210E or 62 5-L in e (C A 3223E ) O peration Features: • H orizontal Driver ■ Two P h ase-Lock L o o p s ■ H orizontal O scillator • Vertical C ountdow n


    OCR Scan     		PDF CA3210, CA3223 525-L 3210E 3223E RCA-CA3210E CA3229E* 10D4LT? CA3210E 3 bit counter vertical section of monitor 3-bit counter CA3229

    BOX54B

    Abstract: pnp 3223 BDX538 bdx548 BDX53C MOTOROLA High voltage fast switching power transistor pnp BDX54B NPN bipolar junction transistors max hfe 2000 box54 TRANSISTOR C 3223
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P lastic M edium -Pow er Com plem entary Silicon Transistors _ BDX53C . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ Iq = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 1 0 0 mAdc


    OCR Scan     		PDF BDX53B, BDX53C, O-220AB BDX53B BDX53C BDX54B BDX54C BDX54B BDX53C BOX54B pnp 3223 BDX538 bdx548 BDX53C MOTOROLA High voltage fast switching power transistor pnp NPN bipolar junction transistors max hfe 2000 box54 TRANSISTOR C 3223

    pnp 3223

    Abstract: BDX63 TRANSISTOR C 3223 Motorola Bipolar Power Transistor Data BDX53C MOTOROLA DX53
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hpE = 2500 Typ @ lc = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 100 mAdc


    OCR Scan     		PDF BDX53B, BDX53C, O-220AB BDX54C BDX53C BDX54B, -55flCto25 pnp 3223 BDX63 TRANSISTOR C 3223 Motorola Bipolar Power Transistor Data BDX53C MOTOROLA DX53

    TRANSISTOR C 3223

    Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice
    Text: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.


    OCR Scan     		PDF MPS5179 MMBT5179 MPS5179 TRANSISTOR C 3223 TRANSISTOR C 1177 BT5179 NPN power transistor spice