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    TRANSISTOR C 2705 Search Results

    TRANSISTOR C 2705 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 2705 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor marking BQ

    Abstract: marking BQ BQ MARKING transistor BQ
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03


    Original     		PDF WBFBP-03B WBFBP-03B TPC5658NND03 TPA2029NND03 100MHz TPC5658NND03 Transistor marking BQ marking BQ BQ MARKING transistor BQ

    TRANSISTOR FQ

    Abstract: transistor marking fq FS transistor marking marking FQ fq transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPA2029NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPC5658NND03


    Original     		PDF WBFBP-03B WBFBP-03B TPA2029NND03 TPC5658NND03 --50A -50mA 30MHz TPA2029NND03 TRANSISTOR FQ transistor marking fq FS transistor marking marking FQ fq transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPA2029NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPC5658NND03


    Original     		PDF WBFBP-03B WBFBP-03B TPA2029NND03 TPC5658NND03 -50mA 30MHz

    Transistor marking BQ

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03


    Original     		PDF WBFBP-03B WBFBP-03B TPC5658NND03 TPA2029NND03 100MHz Transistor marking BQ

    2SA1585E

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)


    Original     		PDF WBFBP-03A 2SA1585E WBFBP-03A 2SA1585E

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)


    Original     		PDF WBFBP-03A 2SA1585E WBFBP-03A 100MHz

    2SC4115E

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)


    Original     		PDF WBFBP-03A 2SC4115E WBFBP-03A 2SC4115E

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)


    Original     		PDF WBFBP-03A 2SC4115E WBFBP-03A 100MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SC4617 NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES Low Cob: Cob=2.0pF Typ A L Complement to 2SA1774 3 3 C B Top View Collector 1 3 C 3 1 K 2 E 2 1 D Base


    Original     		PDF 2SC4617 OT-523 2SA1774 24-Nov-2009

    csc4115bc

    Abstract: CSC4115
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL


    Original     		PDF CSC4115 25deg C-120 csc4115bc CSC4115

    2SC4115S

    Abstract: No abstract text available
    Text: 2SC4115S NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92S FEATURES 1.5 ±0.2 3.1±0.2 4.0±0.2 Power dissipation PD: 0.3 W Tamb=25 I CM: 15.3 ±0.2 Collector current


    Original     		PDF 2SC4115S O-92S 2SC4115S

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL


    Original     		PDF CSC4115 25deg C-120

    2SD2150

    Abstract: transistor marking 2a marking CFR
    Text: 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE SAT =0.5V(Max.) for IC / IB=2A/0.1A


    Original     		PDF 2SD2150 OT-89 100mA -500mA, 100MHz 6-Nov-2009 2SD2150 transistor marking 2a marking CFR

    MARKING W1 AD

    Abstract: transistor BC 153
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)


    Original     		PDF CSC4115 25deg C-120 MARKING W1 AD transistor BC 153

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    T272i

    Abstract: 2SC 5802 2SD1961 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098
    Text: ROHM CO L T » h7 40E /Transistors » Bi 7 Û S Ô ci ci cî OOObDST ö «RHM 2SD1961/2SD1962M/2SD2097/2SD2098 2 S D 1 S 6 1 /2 S D 1 962M S S 2 S D 2 C 9 7 /2 S ÎD 2 C 9 3 Vt>4V:'A'vJ|*J' NPN y y a > Epitaxial Planar NPN Silicon Transistor 1W f i xt'iiEl/'Dlm ensions Unît; mm


    OCR Scan     		PDF 2SD1S81 2SD2C97/2SD2093 2SD1961 /2SD1962M/2SD2097/2SD2098 r-27-13 O-92L/ty/r-i-- T-27-13 O-92L T272i 2SC 5802 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •Features 1) •External dimensions (Units: mm) LOW VcE(sat). VcE(sai) = 0 . 2 V ( T y p .) ( I c / I b = 2A/Û.1A) 2) Excellent current gain characteris­ tics. 3) Complements the 2SB1424/2SA1585S.


    OCR Scan     		PDF 2SD2150/2SC4115S/2SD2264 2SB1424/2SA1585S. 96-237-C74) 2SD2150 2SC4115S 2SD2264 5mQ010

    2SB1460

    Abstract: No abstract text available
    Text: 2SB1460 h 7 > y ^ ^ //Transistors I e £ * V 7 j u7‘ I' - P NP y 'J I] > h -7 > y Epitaxial Planar PN P Silicon Transistor f é U iM ll ^ J ílí lf f l/ L o w Freq. Power Amp. • • « ft Dimensions Unit : mm 1) V c e (sat) V c e (sat)=— 0.2V(Typ.)


    OCR Scan     		PDF 2SB1460 100MHz 2SB1460

    CP666

    Abstract: CP640 Crystalonics FERROXCUBE 1041t060 Crystalonics Cp666 trifilar transistor fet N-Channel RF Amplifier CP664 CP665 CRY664UA
    Text: Web site: WWW.Crystalonics.com Phone: 781 270-5522 R R O A n R A M n RF FF T 1 X \ y / \ l—S k • / / \ 1 1 l_ S 1 X 1 1 L . 1 N-CHANNEL FIELD EFFECT TRANSISTOR niun u t inmivu ^ n Mi N u c n r minu v n r /-uviruiricr» GEOMETRY 424 FOR USE IN COMMON GATE CONFIGURATION


    OCR Scan     		PDF CP640 CRY640UA CP664 CRY664UA CP665 CRY665UA CP666 CRY666UA Crystalonics FERROXCUBE 1041t060 Crystalonics Cp666 trifilar transistor fet N-Channel RF Amplifier CRY664UA

    TRANSISTOR 2688

    Abstract: CE 2711 2SA1150 2SC2682
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF TV25TÃ 2SA1150 TRANSISTOR 2688 CE 2711 2SC2682

    2SC4326LK

    Abstract: J100 T146 T147
    Text: 2SC4326LK h "7 > v J* £ /Transistors 2 S C 4 3 2 6 L K Epitaxial Planar NPN Silicon Transistor RF 7. -f y Switch Usage • W ërJ’JÎBI/Dim ensions Unit : mm 2) 3) R F i V 2 P - i > ¥ « R F ^ - f y ^ f f l t 0.B±0.1 L T £ S „ a T«m • Features


    OCR Scan     		PDF 2SC4326LK 0-15-fr SC-59 0D11Q31 2SC4326LK J100 T146 T147

    2SA1455K

    Abstract: 2SC3722K T146 T147 OA95
    Text: 2SA1455K K ~7 > y 7s £ /'Transistors P N P '> U n > 2 S A 1 4 5 5 K Epitaxial Planar PNP Silicon Transistor £ i*E ftJ l& & g i£ ^ ig itiffl/H ig h Voltage Low Freq. Low Noise Amp. • ftft 1 » W E T * S o Vceo = -1 2 0 V 2) N F=0.2dB Typ.) (at V c e = —6V, lc = - 1 0 0


    OCR Scan     		PDF 2SA1455K -I20V -120V -100mA, 2SC3722K. SC-59 2SA1455K 2SC3722K T146 T147 OA95

    PS2705-4

    Abstract: No abstract text available
    Text: HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI PHOTOCOUPLER PS2705-1 P S 2705-2 PS2705-4 FEATURES_ DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV:3.75 k Vr.m.s. MIN • SOP SMALL OUT-LINE PACKAGE • ISOLATED CHANNELS PER EACH PACKAGE


    OCR Scan     		PDF PS2705-1 PS2705-4 PS2705-1, PS2705-2 PS2705-4

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC PHOTOCOUPLER PS2705-1 ,PS2705-2,PS2705-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he P S 2705-1, P S 2705-2, P S 2 7 0 5 -4 are o p tica lly c o u p le d iso lato rs con ta in in g tw o G aA s light em ittin g d iod es and


    OCR Scan     		PDF PS2705-1 PS2705-2 PS2705-4 P11309EJ5V0DS00 PS2705-1-E4 PS2705-1-F4 PS2705-1-E3