2n7000
Abstract: No abstract text available
Text: 2N7000 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 0. 5 0. 4 0. 5 0. 4 1 FEATURES • V(BR)DSS = 60V 5 4. 0 • RDS(ON) = 5W 6. 2 4 .0 0. 4 • ID = 1A TO92 PACKAGE PIN 1 – Drain PIN 2 – Gate PIN 3 – Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
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2N7000
200mA
500mA
400mW
600mA
2n7000
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Untitled
Abstract: No abstract text available
Text: VN10KC New Product Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
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VN10KC
SC-59
S-00619--Rev.
03-Apr-00
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Untitled
Abstract: No abstract text available
Text: VN10KC New Product Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
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VN10KC
SC-59
O-226AA)
S-58612--Rev.
02-Aug-99
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n 6113 transistor
Abstract: c 6113 transistor
Text: A153S& VQ2004 SERIES P-Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS (V) r DS(ON) (n ) (A) PACKAGE VQ2004 -60 5 -0.41 All VQ2006 -90 5 -0.41 All Performance Curves: VPDV10 •d
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VQ2004
VQ2006
A153S&
14-PIN
VPDV10
n 6113 transistor
c 6113 transistor
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B0815
Abstract: vp2410
Text: Temic P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number V BR DSS VP2410L Mín (V) -240 rn s^ n ) Max (Q) (V) Id (A) -0 .8 to -2 .5 -0.18 VGS(th) 10 @ VGS = -4 .5 V Features Benefits
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VP2410L
O-226AA
P-38283--Rev.
O-226AA)
B0815
vp2410
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CA3081
Abstract: No abstract text available
Text: Selection Guide TRANSISTOR ARRAYS E lectrical C h a ra c te ristics at T a = 2 5 0 C T yp e CA3018 D e s c rip tio n Two Isolated Transistors plus a Darlington Pair CA3018A V BR CEO (M ln .)V V(BR) CBO (M in .)V hFE (M in.) (Max.) mA Package N u m b e r of
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CA3018
CA3018A
CA3045
CA3046
CA3081
CA3082
CA3083
CA3039
CA3141
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Untitled
Abstract: No abstract text available
Text: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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VN0605T
OT-23
VNDS06
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PDF
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE bR E D bbS3R31 QD3042R 4bR • APX Product Specification Philips Semiconductors BUK106-50US BUK106-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic
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bbS3R31
QD3042R
BUK106-50US
BUK106-50LP/SP
0l43c
BUK106-50L/S
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CA3081
Abstract: No abstract text available
Text: Selection Guide TRANSISTOR ARRAYS E lectrical C h a ra c te ris tic s a t T a = 2 5 ° C T yp « C A 3018 D e s c rip tio n V BR CEO (M in.) V V(BR) CBO (M in.) V hFE (M in.) (Max.) mA Pin C o u n t & P ackage Type* 15 20 30 50 12T 15 30 60 50 Tw o Isolated Transistors plus a Darlington Pair
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20MHz.
A3045
CA3081
A3039
CA3141
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1222L
Abstract: NE871 ne87112
Text: NPN SILICON MICROWAVE TRAN SISTO R NE87112 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr = 2 GHz • LOW N O ISE FIGURE: N F = 1.5 dB at 70 MHz • HIGH BR EAK D O W N VOLTAGE: V cbo = 4 5 V DESCRIPTION The NE87112 N PN Silicon Transistor is designed for low-noise
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NE87112
NE87112
-25-c
2SCI260
-1222L
1222L
NE871
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Untitled
Abstract: No abstract text available
Text: B fS S ffA 2N7000 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA BOTTOM VIEW Id (A) V (BR)DSS (V) 60 5 0.2 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDS06 3 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) SYMBOL
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2N7000
O-226AA)
VNDS06
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150X1
Abstract: No abstract text available
Text: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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2N7002
OT-23
VNDS06
150X1,
150X1
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smd15n06
Abstract: 1D TRANSISTOR SMD15N 46849
Text: Temic SMD15N06 Semiconductors N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (Œ) V (A ) 60 0.10 @ Vos = 10 v 15 T O -2 5 2 O TT Drain Connected to Tab G D S Top View O s Order Number: SMD15N06 N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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SMD15N06
S-46849--
26-Feb-96
smd15n06
1D TRANSISTOR
SMD15N
46849
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2N7001
Abstract: t0 SOT23-3
Text: SILICONIX lflE D INC • Ö554735 0 0 1 4 0 2 5 Siliconix 2N7001_ in c o rp o ra te d N-Channel Enhancem ent-M ode M OS Transistor . ' p S 5 _' ^ 5 ' SOT-23 PRODUCT SUMMARY V BR DSS (V) fDS(ON) (U ) <D (A) PACKAGE 240 45 0.045 SOT-23 4 ■ ”
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2N7001
OT-23
VNDN24
2n7001
t0 SOT23-3
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lc 945 p transistor NPN TO 92
Abstract: 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR
Text: M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR NPN F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ f t ë i^ Î% a n d storage junction temperature range -55°C to + 150”C T j.T s tg :
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IJ11III
lc 945 p transistor NPN TO 92
945 TRANSISTOR
lc 945 p transistor
C 945 Transistor
lc 945 p transistor NPN
transistor c945
TRANSISTOR c945 p
BR c945
C945
c945 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Mín (V) r DS(on) Max (Q) VGS(th) (V) Id (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V Gs = - 1 2 V - 2 to -4 .5 -0 .6 Features
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VQ3001J/3001P
P-38283--
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g2jf
Abstract: No abstract text available
Text: SILICONIX INC 18E D • fl5S4735 QQ14147 7 ■ VQ7254 SERIES .fiTSSgSCSS ' j I- UfZ. - 7 . ^ 5 1 1—^ ^ N- and P-Channel Enhancement-Mode M O S Transistor Arrays 14-PIN DIP SIDE BRAZE PRODUCT SUMMARY PART NUMBER V BR DSS (V) rDS(ON) Ql + Q2 or Q3 + Q4 TOP VIEW
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fl5S4735
QQ14147
VQ7254
14-PIN
VQ7254J
2Q/-20
VQ7254P
g2jf
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dfjg
Abstract: No abstract text available
Text: TOSHIBA O I S C R E T E / O P T O J 9097250 TOSHIBA Ti ^DTTaSD □Dlb71t □ 99 D DISCRETE/OPTO SEMICONDUCTOR 16716 DT-BR-IS TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 5 3 9 SILICON N CHANNEL MOS TYPE (7T-MOS) TECHNICAL DATA INDUSTRIAL APPLICATIONS _Unit in mm
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Dlb71t
-100nA
10/ttB
dfjg
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2N7078
Abstract: No abstract text available
Text: C fSiniB conix corp orated 2N7078 N-Channel Enhancement Mode Transistor T O -2 5 4 A A Herm etic P a cka g e TOP v ie w PRODUCT SUMMARY V BR DSS rDS(ON) (V) <n) Id (A) 500 0.40 13 2 3 SOURCE GATE C a s e Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
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2N7078
2N7078
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C2926
Abstract: TRANSISTOR S 813 BUK105-50L BUK105-50S d550s
Text: N AMER P H I L I P S / D I S C R E T E bR E ^53^31 D 0030410 PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive
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bb53S31
BUK105-50L/S
BUK105-50LP/SP
SUK105-50L/S
C2926
TRANSISTOR S 813
BUK105-50L
BUK105-50S
d550s
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PDF
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11105 IC
Abstract: ic 11105 circuits voltage
Text: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary fDS on M ax (£2) V(BR)DSS M i“ (Y) I d (A) . Vos(»h) (V) N-Channel 30 1 @ V GS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V GS= - 1 2 V - 2 to -4 .5 -0 .6
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VQ3001J/3001P
P-38283--
11105 IC
ic 11105 circuits voltage
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THJU401
Abstract: THJJ300B
Text: " S P R AG UE /S EM IC ON D GROUP 13 D • 6513350 0003562 b ■ 93D 03582 TTF-ZV-ZS 8 5 1 4 0 1 9 SPRAGUE . S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al Tfl = 25°C VGS ofl V(BR]GSS Limits Igss
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THJBC264A
THJBC264B
THJBC264C
THJBC264D
THJBF244A
THJBF244B
THJBF244C
THJBF246A
THJBF246B
THJBF246C
THJU401
THJJ300B
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SMW60N10
Abstract: No abstract text available
Text: SMW60N10 CX'SiEconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-247 AD T O P VIEW PRODUCT SUMMARY V BR DSS (V) r DS(ON) (il) (A) •d 100 0 .0 2 5 60 u 1 GATE 2 DRAIN 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
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SMW60N10
O-247
10peration
SMW60N10
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2N7008
Abstract: No abstract text available
Text: 1ÔE D S I L I C O N I X INC A2SM735 0 0 m ü 3 1 T fX S ilic o n ix 2N7008 J .Æ in c o rp o ra te d T -Z 7 -Z 5 N-Channel Enhancem ent-M ode IV10S Transistor PRODUCT SUMMARY V BR DSS (V) fDS(ON) (ÍX ) Id (A) PACKAGE .60. 7,5 0.15 TO-92 2 GATE 3 DRAIN Performance Curves: VNDS06 (See Section 7)
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A2SM735
2N7008
IV10S
VNDS06
2N7008
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