BLC8G27LS-160AV
Abstract: BLC8G27LS sot1275
Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 1 — 23 May 2013 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.
|
Original
|
BLC8G27LS-160AV
BLC8G27LS-160AV
BLC8G27LS
sot1275
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLC8G27LS-100AV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.
|
Original
|
BLC8G27LS-100AV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLC8G27LS-180AV Power LDMOS transistor Rev. 1 — 1 July 2014 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.
|
Original
|
BLC8G27LS-180AV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLC8G27LS-240AV Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
Original
|
BLC8G27LS-240AV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLC8G24LS-240AV Power LDMOS transistor Rev. 1 — 26 September 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
|
Original
|
BLC8G24LS-240AV
|
PDF
|
BLC6G22-100
Abstract: BLC6G22LS-100 SOT896-1
Text: BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1:
|
Original
|
BLC6G22-100;
BLC6G22LS-100
BLC6G22-100
6G22LS-100
BLC6G22LS-100
SOT896-1
|
PDF
|
ACPR400
Abstract: ACPR600 BLC6G20-110 BLC6G20LS-110
Text: BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1:
|
Original
|
BLC6G20-110;
BLC6G20LS-110
ACPR400
ACPR600
BLC6G20-110
6G20LS-110
ACPR400
ACPR600
BLC6G20LS-110
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.
|
Original
|
BLC8G27LS-160AV
|
PDF
|
BLC6G22-130
Abstract: BLC6G22LS-130
Text: BLC6G22-130; BLC6G22LS-130 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1:
|
Original
|
BLC6G22-130;
BLC6G22LS-130
BLC6G22-130
6G22LS-130
BLC6G22LS-130
|
PDF
|
BLC6G20-140
Abstract: BLC6G20LS-140 sot895-1 sot896-1
Text: BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1:
|
Original
|
BLC6G20-140;
BLC6G20LS-140
BLC6G20-140
6G20LS-140
BLC6G20LS-140
sot895-1
sot896-1
|
PDF
|
BLC6G22-75
Abstract: BLC6G22LS-75 RF35 sot895a sot896b
Text: BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor Rev. 01 — 7 February 2008 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
|
Original
|
BLC6G22-75;
BLC6G22LS-75
BLC6G22-75
BLC6G22LS-75
RF35
sot895a
sot896b
|
PDF
|
BLC6G10-200
Abstract: BLC6G10LS-200
Text: BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance
|
Original
|
BLC6G10-200;
BLC6G10LS-200
BLC6G10-200
6G10LS-200
BLC6G10LS-200
|
PDF
|
BLC573
Abstract: 1800 ldmos enamelled copper wire tables rogers 5880 C4532X7R1E475MT020U
Text: BLC573 HF / VHF power LDMOS transistor Rev. 01 — 11 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
|
Original
|
BLC573
BLC573
1800 ldmos
enamelled copper wire tables
rogers 5880
C4532X7R1E475MT020U
|
PDF
|
BLC6G10LS-160
Abstract: BLC6G10-160
Text: BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev. 01 — 12 May 2006 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance
|
Original
|
BLC6G10-160;
BLC6G10LS-160
BLC6G10-160
6G10LS-160
BLC6G10LS-160
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: BLC8G21LS-160AV Power LDMOS transistor Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.
|
Original
|
BLC8G21LS-160AV
|
PDF
|
BLC6G10LS-160
Abstract: BLF6G10LS-200 RF35
Text: BLF6G10LS-200 Power LDMOS transistor Rev. 01 — 18 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance
|
Original
|
BLF6G10LS-200
BLF6G10LS-200
BLC6G10LS-160
RF35
|
PDF
|
LB1274
Abstract: No abstract text available
Text: Ordering number: EN 535C | Monolithic Digital 1C LB1274 N0.535C SAMYO i 6-Unit, Darlington Transistor Array Circuit structure of this 1C is a 6-u nit Darlington transistor array w ith NPN transistors. The 1C is ideal for driving printers, relays, and lamps. Protective diodes guard against negative inputs. Thus it has advantages w hen
|
OCR Scan
|
LB1274
18-digit
85-mAload
LB1274
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
|
OCR Scan
|
BUK200-50Y
BUK200-50Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number: EN 1954C SA WO _ 2SC3779 No.l954C NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NFrl.5dB typ f=0.9GHz .
|
OCR Scan
|
1954C
2SC3779
l954C
200MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering num ber: E N 3964 FC149 No.3964 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications F eatures •Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
|
OCR Scan
|
FC149
2SA1813,
53094TH
FC149
|
PDF
|
APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
|
OCR Scan
|
AF106
AF106
APC UPS CIRCUIT DIAGRAM rs 1500
APC UPS es 500 CIRCUIT DIAGRAM
APC UPS 650 CIRCUIT DIAGRAM
schematic diagram APC back ups XS 1000
TAA550
APC UPS CIRCUIT DIAGRAM
UPS APC rs 1000 CIRCUIT diagram
UPS APC rs 800 CIRCUIT diagram
APC Back ES 500 UPS circuit diagram
CIRCUIT DIAGRAM APC UPS 700
|
PDF
|
transistor BF 451
Abstract: transistor BLC
Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR 2 3 Q 4 2 5 1 U nit in mm TV TUNER, VHF O SCILLATO R APPLICATIO NS. M AXIM UM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent
|
OCR Scan
|
SC-70
transistor BF 451
transistor BLC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : EN 5053 FX803 TR : N PN Epitaxial P lan ar Silicon T ransistor SBD : Schottky B arrier Diode Twin Type • Cathode Common DC-DC Converter F e a tu r e s • Complex type of a low saturation voltage, high speed switching and large current NPN transistor and
|
OCR Scan
|
FX803
FX803
2SB1628
SB20W03P,
101B2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number: EN 4877 FX501 No.4877 I P N P Epitaxial P lan a r Silicon Transistor SA%YOi High-Current Switching Applications F eatures • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package.
|
OCR Scan
|
FX501
FX501
2SB1205,
42695MO
BX-1388
|
PDF
|
